IP Library Granted Patent US 6,903,563
Granted Patent B2
US 6,903,563 · App. 10/902,860 · Granted Jun 7, 2005

Contact probe and probe device

Assignee: Genesis Technology Incorporated
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Quick Facts
Patent No.
US 6,903,563
App. No.
10/902,860
Granted
Jun 7, 2005
Kind
B2
Abstract

A probe device having a contact probe including a film, a plurality of wiring patterns formed on the film with each wiring pattern having a front end portion projecting from the film so as to form contact pins, and a metal layer provided on the film. In one embodiment, the contact probe device includes first and second contact probes connected to each other, the first contact probe including a first film, and a plurality of first wiring patterns formed on the first film, each first wiring pattern having a front end portion projecting from the first film so as to form contact pins. The second contact probe includes a second film, and a plurality of second wiring patterns formed on the second film. The plurality of second wiring patterns are connected to the plurality of first wiring patterns, and the second contact probe is formed separately from the first contact probe.

Claims (13)

1. A probe device comprising:

a film;

a plurality of wiring patterns formed on a first surface of the film, each wiring pattern having a front end portion projecting from the film to form contact pins;

a metal layer provided on a second surface of the film;

a first spacer in contact with the first surface of said film, said first spacer supporting said contact pins and arranged to control a bending direction of said contact pins; and,

a second spacer in contact with said metal layer.

2. The probe device recited in claim 1 , wherein said first spacer is longer than said second spacer.

3. The probe device recited in claim 2 , wherein said first spacer is arranged to control a bending amount of the contact pins.

4. The probe device recited in claim 3 , wherein said metal layer comprises a half-etched portion.

5. The probe device recited in claim 4 , further comprising a second film between said metal layer and said second spacer.

6. The probe device recited in claim 1 , wherein said first spacer is arranged to control a bending amount of the contact pins.

7. The probe device recited in claim 1 , wherein said metal layer comprises a half-etched portion.

8. The probe device recited in claim 1 , further comprising a second film between said metal layer and said second spacer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 11, 2008
From: GENESIS TECHNOLOGY INCORPORATED
To: YOKOWO CO., LTD.
Reel/Frame 021371/0659 →
Priority Claims (7)
JP 8-128570 · May 23, 1996 · national
JP 8-259829 · Sep 30, 1996 · national
JP 8-259831 · Sep 30, 1996 · national
JP 8-303322 · Nov 14, 1996 · national
JP 8-306829 · Nov 18, 1996 · national
JP 8-324430 · Dec 4, 1996 · national
JP 8-349119 · Dec 26, 1996 · national
Continuity (4)
Division 1077632600 · Feb 12, 2004
Division 1007650800 · Feb 19, 2002
Division 0886241400 · May 23, 1997
Related Publication 20050001642A1 · Jan 6, 2005