Variable temperature processes for tunable electrostatic chuck

1. A method for etching a wafer within an etch processor, the etch processor including a chuck for holding a wafer and a plurality of temperature sensors reporting at least a temperature of the wafer at an inner region and an outer region, the chuck including a first heater heating the inner region and a second heater heating the outer region, the first and second heaters controlled by a temperature control system, and the plurality of temperature sensors operatively coupled to the temperature control system to maintain the temperature of the chuck at a selectable setpoint temperature, the method comprising:

selecting a first inner setpoint temperature and a first outer setpoint temperature, a second inner setpoint temperature and a second outer setpoint temperature;

placing the wafer on the chuck;

heating the inner region of the chuck to said first inner setpoint temperature and the outer region of the chuck to said first outer setpoint temperature; and

ramping the temperature of the chuck from said first inner setpoint temperature to said second inner setpoint temperature and from said first outer setpoint temperature to said second outer setpoint temperature while processing the wafer for a period of time.

2. The method of claim 1 wherein said first inner and outer setpoint temperatures are respectively greater than said second inner and outer setpoint temperatures.

3. The method of claim 1 wherein said first inner and outer setpoint temperatures are respectively less than said second inner and outer setpoint temperatures.

4. The method of claim 1 wherein said chuck comprises a plurality of thermal zones.

5. The method of claim 1 wherein said ramping further comprises:

heating the inner region of the wafer to said second inner setpoint temperature; and

heating the outer region of the wafer to said second outer setpoint temperature.

6. The method of claim 1 wherein said ramping further comprises: cooling the inner region of the wafer to said second inner setpoint temperature; and

cooling the outer region of the wafer to said second outer setpoint temperature.

7. The method of claim 1 further comprising:

controlling a profile of a wafer with said selecting said first inner and outer setpoint temperatures and said second inner and outer setpoint temperatures.

8. The method of claim 1 further comprising:

controlling a taper of a trench in the wafer with said selecting said first inner and outer setpoint temperatures and said second inner and outer setpoint temperatures.

9. The method of claim 1 further comprising:

controlling a rounding of a top and bottom trench of a wafer with said selecting said first inner and outer setpoint temperatures and said second inner and outer setpoint temperatures.

10. The method of claim 1 further comprising:

controlling a bow of a trench in the wafer with said selecting said first inner and outer setpoint temperatures and said second inner and outer setpoint temperatures.

11. The method of claim 1 further comprising:

controlling a striation of a trench in the wafer with said selecting said first inner and outer setpoint temperatures and said second inner and outer setpoint temperatures.

12. The method of claim 1 further comprising:

controlling a facet of a trench in the wafer with said selecting said first inner and outer setpoint temperatures and said inner and outer second setpoint temperatures.

13. The method of claim 1 further comprising:

controlling a critical dimension of the wafer with said selecting said first inner and outer setpoint temperatures and said second inner and outer setpoint temperatures.

14. A method for etching a wafer within an etch processor, the etch processor including a chuck for holding a wafer and a plurality of temperature sensors reporting at least a temperature of the wafer at an inner region and an outer region of the wafer, the chuck including a first heater and a second heater heating respectively the inner region and the outer region, the first and second heaters controlled by a temperature control system, and the plurality of temperature sensors operatively coupled to the temperature control system to maintain the temperature of the chuck at a selectable setpoint temperature, the method comprising:

selecting a first inner setpoint temperature and a first outer setpoint temperature;

selecting a second inner setpoint temperature and a second outer setpoint temperature;

placing the wafer on the chuck;

heating the inner region of the wafer to said first inner setpoint temperature and the outer region of the wafer to said first outer setpoint temperature;

processing the wafer for a first period of time at said first inner and outer setpoint temperatures;

changing the temperature of the wafer to the second inner and outer setpoint temperatures; and

processing the wafer for a second period of time at said second inner and outer setpoint temperatures.

15. The method of claim 14 further comprising:

allowing the wafer to cool down between said processing.

16. The method of claim 14 further comprising:

allowing the wafer to heat between said processing.

17. The method of claim 14 wherein said first inner and outer setpoint temperatures are respectively less than said second inner and outer setpoint temperatures.

18. The method of claim 14 wherein said first inner and outer setpoint temperatures are greater than said second inner and outer setpoint temperatures.

19. The method of claim 14 wherein said chuck comprises a plurality of thermal zones.

20. The method of claim 14 further comprising:

controlling a profile of a wafer with said selecting said first inner and outer setpoint temperatures and said second inner and outer setpoint temperatures.

21. The method of claim 14 further comprising:

controlling a taper of a trench in the wafer with said selecting said first inner and outer setpoint temperatures and said second inner and outer setpoint temperatures.

22. The method of claim 14 further comprising:

controlling a bow of a trench in the wafer with said selecting said first inner and outer setpoint temperatures and said second inner and outer setpoint temperatures.

23. The method of claim 14 further comprising:

controlling a striation of a trench in the wafer with said selecting said first inner and outer setpoint temperatures and said second inner and outer setpoint temperatures.

24. The method of claim 14 further comprising:

controlling a facet of a trench in the wafer with said selecting said first inner and outer setpoint temperatures and said second inner and outer setpoint temperatures.

25. The method of claim 14 further comprising:

controlling a critical dimension of the wafer with said selecting said first inner and outer setpoint temperatures and said second inner and outer setpoint temperatures.

26. A method for etching a wafer comprising:

selecting a first inner setpoint temperature and a first outer setpoint temperature, and a second inner setpoint temperature and a second outer setpoint temperature;

holding a wafer against a top face of a chuck during processing;

configuring said top face into a plurality of zones into which zone coolant gas can flow along and between the top face and an underside of said wafer;

admitting a cooling gas into the respective zones; and

controlling the pressures of zone coolant gas separately in the respective zones so as to control the temperature to said first inner and outer setpoint temperatures for a first period of time, and to said second inner and outer setpoint temperatures for a second period of time, across said wafer during processing.