Etching apparatus using neutral beam
A damage-free apparatus for etching the large area by using a neutral beam which can perform an etching process without causing electrical and physical damages by the use of the neutral beam is provided. The damage-free etching apparatus includes: an ion source for extracting and accelerating an ion beam having a predetermined polarity; a grid positioned at the rear of the ion source and having a plurality of grid holes through which the ion beam passes; a reflector closely attached to the grid and having a plurality of reflector holes corresponding to the grid holes in the grid, the reflector for reflecting the ion beam passed through the grid holes in the reflector holes and neutralizing the ion beam into a neutral beam; and a stage for placing a substrate to be etched in a path of the neutral beam.
1. An etching apparatus using a neutral beam comprising:
an ion source for extracting and accelerating an ion beam having a predetermined polarity;
a grid having a plurality of grid holes through which the ion beam passes;
a reflector attached to the grid, and having a plurality of reflector passages, the reflector passages communicating with the grid holes such that the ion beam passing through the grid holes is reflected by surfaces of the reflector passages and the ion beam is neutralized into a neutral beam; and
a stage for placing a substrate to be etched in a path of the neutral beam.
2. The etching apparatus of claim 1 , further comprising a retarding grid disposed between the reflector and the stage.
3. The etching apparatus of claim 1 , wherein each reflector passage has a circular cross-section.
4. The etching apparatus of claim 1 , wherein the grid has a cylindrical shape and the reflector has a cylindrical shape.
5. The etching apparatus of claim 1 , wherein the reflector passages are slanted with respect to an advancing direction of the ion beam so that the ion beam passing through the grid holes and advancing straight is reflected by the surfaces of the reflector passages.
6. The etching apparatus of claim 5 , wherein the reflector passages are non-parallel with a central axis of the reflector.
7. The etching apparatus of claim 5 , wherein the reflector passages are parallel with a central axis of the reflector and the reflector is slantingly connected to the grid.
8. The etching apparatus of claim 1 , wherein the ion source is an inductively coupled plasma (ICP) source.
9. The etching apparatus of claim 1 , wherein the reflector is formed of one of a semiconductor substrate, a silicon dioxide substrate, and a metal substrate.
10. The etching apparatus of claim 5 , wherein an angle between a central axis of the reflector passages and the advancing direction of the ion beam is from 5° to 150°.
11. The etching apparatus of claim 3 , wherein the circular section of each reflector passage has a diameter which is equal to or greater than that of its respective grid hole.