Semiconductor device and fabrication method therefor
With a stopper layer 19 as an etching stopper, a second groove 14 a and a contact hole 13 a are formed. Copper is buried inside the second groove 14 a and the contact hole 13 a , thereby forming a plug layer 22 and an overlying wiring layer 21 connected to an underlying wiring layer 17 via the plug layer 22 . The stopper layer 19 is comprised of Si, C and N as essential components. First and second cap layers 18 and 23 are also comprised of Si, C and N as essential components.
1. A semiconductor device comprising:
a first insulating layer which has, on one surface thereof, a groove or a hole reaching another surface side;
a second insulating layer which is provided on said first insulating layer has an opening overlapping said groove or hole and includes Si, C and N; and
a conductive layer buried in said groove or hole and said opening,
wherein a ratio of a quantity of C atoms to a quantity of Si atoms in said second insulating layer is 0.2 to 0.8, and a ratio of a quantity of N atoms to said quantity of Si atoms in said second insulating layer is 0.15 to 1.0.
2. The semiconductor device according to claim 1 , further comprising a third insulating layer which is provided on said second insulating layer and is comprised of Si, C and N.
3. The semiconductor device according to claim 2 , wherein a ratio of a quantity of C atoms to a quantity of Si atoms in said third insulating layer is 0.2 to 0.8, and a ratio of a quantity of N atoms to said quantity of Si atoms in said third insulating layer is 0.15 to 1.0.
4. The semiconductor device according to claim 1 , wherein said first insulating layer is comprised of silicon fluoride oxide or carbon fluoride.
5. The semiconductor device according to claim 1 , wherein said conductive layer is comprised of copper.
6. A semiconductor device comprising:
a first insulating layer having a first through hole;
a second insulating layer which is provided on said first insulating layer, has a first opening overlapping said first through hole and includes Si, C and N;
a third insulating layer which is provided on said second insulating layer and has a second through hole overlapping said first opening and larger in diameter than said first opening; and
a conductive layer buried in said first through hole, said first opening and said second through hole,
wherein a ratio of a quantity of C atoms to a quantity of Si atoms in said second insulating layer is 0.2 to 0.8, and a ratio of a quantity of N atoms to said quantity of Si atoms in said second insulating layer is 0.15 to 1.0.
7. The semiconductor device according to claim 6 , further comprising a fourth insulating layer which is provided on said third insulating layer and said conductive layer and is comprised of Si, C and N.
8. The semiconductor device according to claim 7 , wherein a ratio of a quantity of C atoms to a quantity of Si atoms in said fourth insulating layer is 0.2 to 0.8, and a ratio of a quantity of N atoms to said quantity of Si atoms in said fourth insulating layer is 0.15 to 1.0.
9. The semiconductor device according to claim 6 , wherein said first insulating layer and said third insulating layer are comprised of silicon fluoride oxide or carbon fluoride.
10. The semiconductor device according to claim 6 , wherein said conductive layer is comprised of copper.
11. A semiconductor device comprising:
a first insulating layer which has, on one surface thereof, a groove or a hole reaching an other surface side;
a second insulating layer which is provided on said first insulating layer, has an opening overlapping said groove or hole and includes Si, C, N and H; and
a conductive layer buried inside said groove or hole and said opening,
said second insulating layer containing 10 21 to 10 22 CH n groups (n being an integer of 1 to 3) per volume area.
12. The semiconductor device according to claim 11 , further comprising a third insulating layer which is provided on said second insulating layer and said conductive layer and includes Si, C, N and H.
13. The semiconductor device according to claim 12 , wherein a ratio of a quantity of C atoms to a quantity of Si atoms in said third insulating layer is 0.2 to 0.8, and a ratio of a quantity of N atoms to said quantity of Si atoms in said third insulating layer is 0.15 to 1.0.
14. The semiconductor device according to claim 11 , wherein said first insulating layer is comprised of silicon fluoride oxide or carbon fluoride.
15. The semiconductor device according to claim 11 , wherein said conductive layer is comprised of copper.
16. The semiconductor device according to claim 11 , wherein said second insulating layer has dielectric constant of 6 or less.
17. A semiconductor device comprising:
a first insulating layer having a first through hole;
a second insulating layer which is provided on said first insulating layer, has a first opening overlapping said first through hole and includes Si, C, N and H,
a third insulating layer which is provided on said second insulating layer and has a second through hole overlapping said first opening and larger in diameter than said first opening; and
a conductive layer buried in said first through hole, said first opening and said second through hole,
said second insulating layer containing 10 21 to 10 22 CH n groups (n being an integer of 1 to 3) per volume area.
18. The semiconductor device according to claim 17 , further comprising a fourth insulating layer which is provided on said third insulating layer and said conductive layer, includes Si, C and H and contains 10 21 to 10 22 CH n groups (n being an integer of 1 to 3) per volume area.
19. The semiconductor device according to claim 17 , wherein said first insulating layer and said third insulating layer are comprised of silicon fluoride oxide or carbon fluoride.
20. The semiconductor device according to claim 17 , wherein said conductive layer is comprised of copper.
21. The semiconductor device according to claim 17 , wherein said second insulating layer has dielectric constant of 6 or less.
22. A fabrication method for a semiconductor device comprising the steps of:
forming a first insulating layer;
forming a second insulating layer including Si, C and N on said first insulating layer;
selectively etching said second insulating layer to form an opening;
etching said first insulating layer using said second insulating layer as a mask, thereby forming a wiring groove or hole; and
burying a conductive layer in said opening or said wiring groove or hole;
wherein a ratio of a quantity of C atoms to a quantity of Si atoms in said second insulating layer is 0.2 to 0.8, and a ratio of a quantity of N atoms to said quantity of Si atoms in said second insulating layer is 0.15 to 1.0.
23. The fabrication method according to claim 22 , wherein a third insulating layer including Si, C and N is further formed on said second insulating layer and said conductive layer.
24. The fabrication method according to claim 23 , wherein a ratio of a quantity of C atoms to a quantity of Si atoms in said third insulating layer is 0.2 to 0.8, and a ratio of a quantity of N atoms to said quantity of Si atoms in said third insulating layer is 0.15 to 1.0.
25. The fabrication method according to claim 22 , wherein said first insulating layer is comprised of silicon fluoride oxide or carbon fluoride.
26. The fabrication method according to claim 22 , wherein said conductive layer is comprised of copper.
27. A fabrication method for a semiconductor device comprising the steps of:
forming a first insulating layer;
forming a second insulating layer including Si, C and N on said first insulating layer;
forming a third insulating layer on said second insulating layer;
selectively etching to form a first hole which penetrates through said first insulating layer, said second insulating layer and said third insulating layer;
selectively etching said third insulating layer using said second insulating layer as a stopper to form a second hole which overlaps said first hole and is larger in diameter than said first hole; and
burying a conductive layer inside said first hole and said second hole,
wherein a ratio of a quantity of C atoms to a quantity of Si atoms in said second insulating layer is 0.2 to 0.8, and a ratio of a quantity of N atoms to said quantity of Si atoms in said second insulating layer is 0.15 to 1.0.
28. The fabrication method according to claim 27 , wherein a fourth insulating layer including Si, C and N is further formed on said third insulating layer and said conductive layer.
29. The fabrication method according to claim 28 , wherein a ratio of a quantity of C atoms to a quantity of Si atoms in said fourth insulating layer is 0.2 to 0.8, and a ratio of a quantity of N atoms to said quantity of Si atoms in said fourth insulating layer is 0.15 to 1.0.
30. The fabrication method according to claim 27 , wherein said first insulating layer and said third insulating layer are comprised of silicon fluoride oxide or carbon fluoride.
31. The fabrication method according to claim 27 , wherein said conductive layer is comprised of copper.
32. A fabrication method for a semiconductor device comprising the steps of:
forming a first insulating layer;
forming a second insulating layer including Si, C and N on said first insulating layer;
selectively etching said second insulating layer to form an opening;
etching said first insulating layer using said second insulating layer as a mask, thereby forming a wiring groove or hole; and
burying a conductive layer inside said opening or said wiring groove or hole,
said second insulating layer being formed in said step of forming said second insulating layer in such a way as to contain 10 21 to 10 22 CH n groups (n being an integer of 1 to 3) per volume area.
33. The fabrication method according to claim 32 , wherein in said second insulating layer forming step, said second insulating layer is formed with at least an organic silazane compound as a starting material.
34. The fabrication method according to claim 32 , further comprising a step of forming a third insulating layer, which includes Si, C, N and H and contain 10 21 to 10 22 CH n groups (n being an integer of 1 to 3) per volume area, on said second insulating layer and said conductive layer.
35. The fabrication method according to claim 32 , wherein said first insulating layer is comprised of silicon fluoride oxide or carbon fluoride.
36. The fabrication method according to claim 32 , wherein said conductive layer is comprised of copper.
37. A fabrication method for a semiconductor device comprising the steps of:
forming a first insulating layer;
forming a second insulating layer including Si, C and N on said first insulating layer;
forming a third insulating layer on said second insulating layer;
selectively etching to form a first hole which penetrates through said first insulating layer, said second insulating layer and said third insulating layer;
selectively etching said third insulating layer using said second insulating layer as a stopper to form a second hole which overlaps said first hole and is larger in diameter than said first hole; and
burying a conductive layer in said first hole and said second hole,
said second insulating layer being formed in said step of forming said second insulating layer in such a way as to contain 10 21 to 10 22 CH n groups (n being an integer of 1 to 3) per volume area.
38. The fabrication method according to claim 37 , wherein in said second insulating layer forming step, said second insulating layer is formed with at least an organic silazane compound as a starting material.
39. The fabrication method according to claim 37 , wherein a fourth insulating layer, which includes Si, C, N and H and contains 10 21 to 10 22 CH n groups(n being an integer of 1 to 3) per volume area, is further formed on said third insulating layer and said conductive layer.
40. The fabrication method according to claim 37 , wherein said first insulating layer and said third insulating layer are comprised of silicon fluoride oxide or carbon fluoride.