Buried channel strained silicon FET using a supply layer created through ion implantation
A buried channel FET including a substrate, a relaxed SiGe layer, a channel layer, a SiGe cap layer, and an ion implanted dopant supply. The ion implanted dopant supply can be in either the SiGe cap layer or the relaxed SiGe layer. In one embodiment the FET is a MOSFET. In another embodiment the FET is within an integrated circuit. In yet another embodiment, the FET is interconnected to a surface channel FET.
1. A buried channel FET comprising:
a substrate;
a relaxed SiGe layer;
a channel layer adjacent said relaxed SiGe layer;
a SiGe cap layer adjacent said channel layer; and
an ion-implanted dopant supply in at least one of the relaxed SiGe layer and the SiGe cap layer, the dopant supply extending along said channel and having an ion-implanted dopant profile.
2. The FET of claim 1 , wherein the substrate comprises Si.
3. The FET of claim 1 , wherein the substrate comprises relaxed graded composition SiGe layers on Si.
4. The FET of claim 1 , wherein the substrate comprises Si with a layer of SiO 2 .
5. The FET of claim 1 further comprising a metal-oxide-semiconductor gate.
6. The FET of claim 1 , wherein the ion implanted dopant supply is in the SiGe cap layer.
7. The FET of claim 1 , wherein the ion implanted dopant supply is in the relaxed SiGe layer.
8. The FET of claim 1 , wherein the channel layer is under tensile strain.
9. The FET of claim 1 , wherein the channel layer is under compressive strain.
10. The FET of claim 1 , wherein the ion implanted dopant supply comprises As, P, Sb, B, Ga, or In.
11. The FET of claim 8 , wherein the relaxed SiGe layer has a Ge concentration in the range of 10–50%.
12. The FET of claim 11 , wherein the channel layer comprises Si.
13. The FET of claim 12 , wherein the ion implanted dopant supply comprises P, As, or Sb.
14. The FET of claim 9 , wherein the relaxed SiGe layer has a Ge concentration in the range of 50–90%.
15. The FET of claim 14 , wherein the channel layer comprises Ge.
16. The FET of claim 15 , wherein the ion implanted dopant supply comprises B, Ga, or In.
17. The FET of claim 1 , wherein the channel layer has a thickness between 2 and 30 nm.
18. The FET of claim 1 , wherein the SiGe cap layer has a thickness between 2 and 20 nm.
19. An integrated circuit comprising the FET of claim 1 .
20. An integrated circuit comprising the FET of claim 1 interconnected to a surface channel FET.
21. A buried channel MOSFET comprising:
a substrate;
a relaxed SiGe layer;
a channel layer adjacent said relaxed SiGe layer;
a SiGe cap layer adjacent said channel layer;
an ion-implanted dopant supply in at least one of the relaxed SiGe layer and the SiGe cap layer, the dopant supply extending along said channel and having an ion-implanted dopant profile; and
a gate dielectric.
22. The MOSFET of claim 21 , wherein the substrate comprises Si.
23. The MOSFET of claim 21 , wherein the substrate comprises relaxed graded composition SiGe layers on Si.
24. The MOSFET of claim 21 , wherein the substrate comprises Si with a layer of SiO 2 .
25. The MOSFET of claim 21 , wherein the relaxed SiGe layer has a Ge composition in the range of 10–50%.
26. The MOSFET of claim 25 , wherein the channel layer comprises Si.
27. The MOSFET of claim 26 , wherein the ion implanted dopant supply comprises P, As, or Sb.
28. An integrated circuit comprising the MOSFET of claim 21 .
29. An integrated circuit comprising the MOSFET of claim 21 interconnected to a surface channel MOSFET.