Reacted conductive gate electrodes
A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium. A contact of the device has a portion proximal to the semiconductor layer and a portion distal to the semiconductor layer. The distal portion includes the first material and the second material. A metal layer formed adjacent to the relaxed semiconductor layer and adjacent to the distal portion of the contact is simultaneously reacted with the relaxed semiconductor layer and with the distal portion of the contact to provide metallic contact material.
1. A semiconductor device, comprising:
a substrate comprising a relaxed layer, a strained semiconductor layer between the relaxed layer and a dielectric layer, and a reacted conductive silicide layer in contact with the relaxed layer, wherein the reacted conductive silicide layer comprises silicon, germanium and a metallic material; and
a gate contact comprising a reacted conductive silicide portion comprising silicon, germanium and the metallic material.
2. The device of claim 1 , wherein the substrate reacted conductive silicide layer and the contact reacted conductive silicide portion have substantially the same chemical composition.
3. The device of claim 1 , wherein the gate contact comprises an unreacted portion, and the unreacted portion consists essentially of one of silicon and germanium.
4. The device of claim 1 , wherein the gate contact comprises an unreacted portion comprising silicon and germanium.
5. A semiconductor device comprising:
a substrate comprising a strained semiconductor layer and a reacted conductive layer, wherein the reacted conductive layer comprises a first material, a second material and a metallic material; and
a gate contact having a reacted conductive portion and a semiconductor portion between the reacted conductive portion and the substrate, the reacted conductive portion comprising the first material, the second material and the metallic material, and the semiconductor portion having a graded composition.
6. The semiconductor device of claim 5 , wherein the strained semiconductor layer comprises at least one of silicon and germanium.
7. The semiconductor device of claim 5 , wherein the substrate reacted conductive layer and the gate contact reacted conductive portion have substantially the same chemical composition.
8. The semiconductor device of claim 5 , wherein the semiconductor portion of the gate contact consists essentially of one of the first material and the second material.
9. The semiconductor device of claim 5 , wherein the semiconductor portion of the gate contact comprises the first material and the second material.
10. The semiconductor device of claim 1 , wherein the strained semiconductor layer comprises at least one of silicon and germanium.
11. The semiconductor device of claim 1 , wherein the gate contact consists essentially of silicon, germanium and the metallic material.
12. The semiconductor device of claim 1 , further comprising a gate dielectric portion in contact with the gate contact, and wherein the gate contact consists essentially of a silicide reaction product.
13. The semiconductor device of claim 5 , wherein the semiconductor portion comprises at least one of silicon and germanium.
14. The semiconductor device of claim 5 , wherein the graded composition of the semiconductor portion has a smooth variation.
15. The semiconductor device of claim 5 , wherein the graded composition of the semiconductor portion has an abrupt variation.