Double density MRAM with planar processing
The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.
1. A method of forming a magnetic memory device on a substrate, the method comprising:
forming a first and second electrode on the substrate;
forming a first magnetic memory component on the first and second electrode in a manner so as to be electrically coupled therewith;
forming a first insulation layer on the substrate in a manner so as to overlie the first magnetic memory component and the first and second electrode;
forming a word line on the first insulation layer;
forming a second insulating layer on the first insulating layer in a manner so as to overlie the word line;
forming a third and fourth electrode on the second insulating layer;
forming a second magnetic memory component on the third and fourth electrode in a manner so as to be electrically coupled therewith, and wherein forming the second magnetic component increases the storage and fabrication density of the memory device; and
forming a third insulating layer on the second insulating layer in a manner so as to overlie the second magnetic memory component and the third and fourth electrodes.
2. The method of claim 1 , wherein forming the first and second electrode on the substrate includes forming the first and second electrode using a dual damascene process.
3. The method of claim 1 , wherein forming the first and second magnetic memory component includes forming a first and second programmable component selected from the group consisting of a pseudo spin valve (PSV) device, magnetic tunneling junction (MTJ) device, an inline giant magneto-resistive (GMR) device, and a magneto-resistive random access memory (MRAM) device.
4. The method of claim 1 , wherein forming the word line includes positioning the word line substantially perpendicular to the first and second electrodes.
5. The method of claim 1 , wherein forming the third and fourth electrodes includes positioning the third and fourth electrodes substantially parallel to the first and second electrodes and substantially perpendicular to the word line.
6. The method of claim 1 , wherein the method further comprises forming at least one magnetic keeper adjacent to the word line.
7. A method of increasing the density of a magnetic memory device having a substrate, the method comprising:
forming a first memory layer on the substrate, wherein the first memory component comprises at least one magnetic storage component and a plurality of electrodes electrically coupled therewith;
forming a word line on the first memory layer; and
forming second memory layer above the word line, wherein the second memory layer comprises at least one magnetic storage component and a plurality of electrodes electrically coupled therewith, and wherein forming the second memory layer increases the fabrication density of the magnetic memory device.
8. The method of claim 7 , wherein forming the first memory layer includes planarizing the first memory layer.
9. The method of claim 7 , wherein the method further comprises forming a first insulation layer between the first memory layer and the word line.
10. The method of claim 7 , wherein forming the word line includes planarizing the word line.
11. The method of claim 7 , wherein the method further comprises forming a second insulation layer between the word line and the second memory layer.
12. The method of claim 7 , wherein forming the second memory layer includes planarizing the second memory layer.
13. The method of claim 7 , wherein the method further comprises forming one or more additional memory layers on the second memory layer, wherein the one or more additional memory layers comprise at least one magnetic storage component and a plurality of electrodes electrically coupled therewith.
14. The method of claim 13 , wherein the method further comprises forming one or more insulation layers between the additional memory layers.