Separately strained N-channel and P-channel transistors
An integrated circuit with a first plurality of transistors formed on a first wafer and second plurality of transistors formed on a second wafer. At least a substantial majority of the transistor of the first transistor are of a first conductivity type and at least a substantial majority of the transistors of the second plurality are of a second conductivity type. After wafers are bonded together, a portion of the second wafer is removed wherein the strain of the channels of the second plurality of transistors is more compressive than the strain of the channels of the first plurality of transistors.
1. A method of forming an integrated circuit, the method comprising:
providing a first wafer including a first layer, at least a substantial majority of a plurality of transistors having channel regions in the first layer are of a first conductivity type;
bonding a second wafer to the first wafer, the second wafer including a second layer, at least a substantial majority of the plurality of transistors having channel regions in the second layer are of a second conductivity type; and
removing a portion of the second wafer subsequent the bonding, wherein subsequent to the removing, the channel regions in the first layer generally have a first strain and the channel region in the second layer generally have a second strain, wherein the first strain is more tensile than the second strain.
2. The method of claim 1 wherein the removing includes removing at least 99 percent of the thickness of the second wafer.
3. The method of claim 1 further comprising:
forming the second layer over a first substrate prior to the bonding a second wafer;
bonding a second substrate over the second layer prior to the bonding the second wafer,
removing the first substrate from the second layer prior to the bonding the second wafer;
wherein the removing a portion of the second wafer includes removing the second substrate.
4. The method of claim 1 further comprising:
forming an interlevel dielectric over the first and second wafers subsequent to the removing.
5. The method of claim 1 wherein the bonding includes bonding the second wafer such that the transistors having channel regions in the second layer are located face up with respect to the first wafer.
6. The method of claim 1 wherein the bonding includes bonding the second wafer such that the transistors having channel regions in the second layer are located face down with respect to the first wafer.
7. The method of claim 1 wherein the bonding includes bonding the second wafer with a bonding material having a Young's Modulus of about 10 giga pascals or less.
8. The method claim 1 wherein the bonding includes bonding the second wafer with a bonding material having a Young's Modulus of about 3 giga pascals or less.
9. The method of claim 1 further comprising:
forming an interlevel dielectric over the transistors having channel regions in the second layer prior to the bonding, wherein the interlevel dielectric remains subsequent to the removing.
10. The method of claim 1 wherein the first conductivity is N-type and the second conductivity is P-type.
11. The method of claim 1 wherein:
the first wafer includes an insulator, the first layer is located over the insulator;
the second wafer includes a second insulator, the second layer located over the second insulator prior to the bonding.
12. The method of claim 11 wherein the removing includes removing the second insulator.
13. The method of claim 1 further comprising:
forming a first interlevel dielectric over the first layer prior to the bonding;
forming a second interlevel dielectric over the second layer prior to the bonding;
forming a hole through at least a portion of the first interlevel dielectric and through at least a portion of the second interlevel dielectric subsequent to the removing; and
filling the hole with conductive material.
14. A method of forming an integrated circuit, the method comprising:
providing a first wafer comprising a first layer, a first insulator, and a fast substrate, the first insulator located between the first layer and the first substrate;
forming source/drain regions in the first layer, wherein at least a substantial majority of the source/drain regions are of a first conductivity type;
providing a second wafer comprising a second layer, a second insulator, and a second substrate, the second insulator located between the second layer and the second substrate;
forming source/drain regions in the second layer, wherein at least a substantial majority of the source/drain regions are of a second conductivity type;
bonding the first wafer to the second wafer subsequent to the forming the source/drain regions in the first layer and the forming the source/drain regions in the second layer; and
removing the second substrate subsequent to bonding the first wafer to the second wafer, wherein subsequent to the removing, the first layer generally has a first strain and the second layer generally has a second strain, wherein the first strain is more tensile than the second strain.
15. The method of claim 5 , wherein:
the first conductivity type is N-type; and
the second conductivity type is P-type.
16. The method claim 14 wherein the bonding includes bonding the second wafer in a face up configuration with respect to the first wafer.
17. The method claim 3 wherein the bonding includes bonding the second wafer in a face down configuration with respect to the first wafer.
18. The method of claim 3 further comprising;
forming an interlevel dielectric over the second layer subsequent to the removing, the interlevel dielectric including a plurality of interconnects, with each interconnect of the plurality electrically coupled to a source/drain region of the first layer and a source/drain region of the second layer.
19. The method of claim 14 wherein the bonding includes bonding the second wafer with a bonding material having a Young's Modulus of about 10 giga pascals or less.
20. The method of claim 14 wherein the bonding includes bonding the second wafer with a bonding material having a Young's Modulus of about 3 giga pascals or less.
21. The method of claim 14 wherein the bonding includes bonding the second wafer with a bonding material, wherein the bonding material nuclides benzocyclobutene (BCB).