Trench type buried on-chip precision programmable resistor
View Patent ↗An on-chip, ultra-compact, and programmable semiconductor resistor device and device structure and a method of fabrication. Each semiconductor resistor device structure is formed of one or more conductively connected buried trench type resistor elements exhibiting a precise resistor value. At least two semiconductor resistor device structures may be connected in series or in parallel configuration through the intermediary of one or more fuse devices that may be blown to achieve a desired total resistance value.
1. A semiconductor resistor device structure comprising:
a plurality of trenches buried in a semiconductor substrate, each trench filled with a conductive material to form a trench resistor element and lined with an insulator material, each trench having a contact portion formed at a bottom of said trench;
a connection band of doped semiconductor material conductively connecting bottom contact portions of two adjacent trenches in first alternating configuration;
a top surface connection of conductive material conductively connecting top surfaces of adjacent trenches in second alternating configuration;
wherein said buried trench resistor structure comprises a chain of conductively connected trench resistor elements exhibiting a precise resistor value.
2. The semiconductor resistor device structure of claim 1 , wherein said chain of conductively connected trench resistor elements form a semiconductor trench resistor array exhibiting a precise resistor value.
3. The semiconductor resistor device structure of claim 1 , wherein said conductive material filling said trench comprises one selected from the group comprising: TaN and polysilicon.
4. The semiconductor resistor device structure of claim 1 , wherein said trench resistor element includes a collar of dielectric material formed above said bottom contact portion.
5. The semiconductor resistor device structure of claim 4 , wherein said dielectric material includes material selected from a group comprising: oxides, nitrides, and oxynitrides.
6. A semiconductor resistor device structure comprising:
a plurality of trenches buried in a semiconductor substrate, each trench including a dielectric material lining, and including a conductive material layer formed within the trench having a bottom and two side portions extending along the length of the trench, and said conductive material layer including top layer portions extending to connect a top layer portion of a respective adjacent trench resistor element to form a chain of conductively connected trench resistor elements exhibiting a precise resistor value.
7. The semiconductor resistor device structure of claim 6 , wherein said chain of conductively connected trench resistor elements forms a semiconductor trench resistor array.
8. The semiconductor resistor device structure of claim 6 , wherein said conductive material layer comprises one selected from the group comprising: TaN and polysilicon.
9. The semiconductor resistor device structure of claim 6 , wherein each said trench resistor element includes a collar of dielectric material surrounding said conductive film and a dielectric material filler.
10. The semiconductor resistor device structure of claim 9 , wherein said dielectric material includes material selected from the group comprising: oxides, nitrides, and oxynitrides.
11. A programmable semiconductor resistor structure comprising:
at least two semiconductor resistor device structures connected through the intermediary of a fuse device, each semiconductor resistor device structure comprising:
a plurality of trenches buried in a semiconductor substrate, each trench filled with a conductive material to form a trench resistor element and lined with an insulator material, each trench having a contact portion formed at a bottom of said trench;
a connection band of doped semiconductor material conductively connecting bottom contact portions of two adjacent trenches in first alternating configuration;
a top surface connection of conductive material conductively connecting top surfaces of adjacent trenches in second alternating configuration, said buried trench resistor structure comprising a chain of conductively connected trench resistor elements exhibiting a precise resistor value,
wherein a total resistance value of said semiconductor resistor structure is programmable by blowing said fuse device.
12. The programmable semiconductor resistor structure of claim 11 , wherein said at least two, semiconductor resistor device structures are connected in series through a connecting fuse device.
13. The programmable semiconductor resistor structure of claim 11 , wherein said at least two semiconductor resistor device structures are connected in parallel.
14. A programmable semiconductor resistor structure comprising at least two semiconductor resistor device structures connected through the intermediary of a fuse device, each semiconductor resistor device structure comprising a plurality of trenches buried in a semiconductor substrate, each trench including a dielectric material lining, and including a conductive material layer formed within the trench having a bottom and two side portions extending along the length of the trench, and said conductive material layer including top layer portions extending to connect a top layer portion of a respective adjacent trench resistor element to form a chain of conductively connected trench resistor elements exhibiting a precise resistor value, wherein a total resistance value of said semiconductor resistor structure is programmable by blowing said fuse device.
15. The programmable semiconductor resistor structure of claim 14 , wherein said at least two semiconductor resistor device structures are connected in series through a connecting fuse device.
16. The programmable semiconductor resistor structure of claim 14 , wherein said at least two semiconductor resistor device structures are connected in parallel.