Method for fabricating a flip chip package with pillar bump and no flow underfill
A method for joining a semiconductor integrated circuit (IC) chip in a flip chip configuration, via pillar bump, to solderable metal contact pads, leads or circuit lines on the ciruitized surface of a chip carrier, as well as the resulting chip package, are disclosed. The semiconductor device is attached to the substrate via no flow underfill under thermal compression bonding. Integration of this structure and assembly method enables to incorporate low coefficient of thermal expansion (CTE) no flow underfill and achieve high assembly yield, especially for lead free bumps. The present invention provides a solution for a flip chip package with fine pitch, high pin count and lead free requirements.
1. A method for forming a flip-chip package structure comprising:
providing a semiconductor device, having formed thereover one or more pillars and patterned layers of conductors each top coated with lead or lead free solder bumps wherein said pillars are formed by a method comprising:
depositing a seed layer over said semiconductor device;
forming a bottom metallization layer over said seed layer;
forming a top metallization layer over said bottom metallization layer; and
patterning said top and bottom metallization layers, using a bump-sized mask;
providing a substrate having a plurality of bond pads;
thereafter depositing a no flow underfill encapsulant over said bond pads exposed through bump-based size solder masks on said substrate wherein said no flow underfill encapsulated further comprises silica, aluminum oxide, aluminum nitride, or born nitride filler; and
thereafter attaching said semiconductor device to said substrate by thermal compression bonding.
2. The method of claim 1 wherein each of said pillar bumps are aligned with the exposed said bond pads in said substrate during said attaching.
3. The method of claim 1 wherein said thermal compression bonding comprises applying a down force of between about 5 and 100 newtons at a temperature of between about 180° C. and 350° C. to melt the bonding material.
4. The method of claim 1 wherein said bond pads comprise Cu or Ni/Au or osp coating or solder cap.
5. The method of claim 4 wherein said substrate is a multilayer laminate, a flexible printed circuit board, or is a ceramic.
6. The method of claim 1 wherein said top and bottom metallization layers are selected from the group comprising Ti/NiV/CU or Cr/CrCu/Cu.
7. The method claim 1 wherein pillar bumps are comprised of Cu (copper).
8. The method of claim 1 wherein pillar bumps are capped with lead or lead free alloys of solder material selected from the group comprising SnAg, PbSn, PbSnAg, Sn/Cu, SnAgCu, and SnBi.
9. The method of claim 1 wherein said no flow underfill encapsulant comprises a no flow material with inorganic particles dispersed therein.
10. The method of claim 1 wherein said substrate is selected from the group consisting of Si 3 N 4 , SiO 2 , Si 3 N 4 /SiO 2 .
11. The method of claim 1 wherein said substrate is selected from the group consisting of an organic low dielectric laminate comprising polyimide and benzocyclobutene.
12. The method of claim 1 wherein said metallization layers are comprised of material selected from the group consisting of copper and aluminum.
13. The method of claim 1 wherein the top and bottom metallization and seed layers are comprised of a material selected from the group consisting of Ti/Cu, Cr/Cu, Ti/Ni, and Ni/Au.