Method for enhancing adhesion between reworked photoresist and underlying oxynitride film
A method for enhancing adhesion between a reworked photoresist and an underlying oxynitride film. A photoresist pattern layer is formed on an oxynitride layer overlying a substrate. The photoresist pattern layer is removed by acidic solution or oxygen-containing plasma. A surface treatment is performed on the oxynitride layer using a development solution to repair the damaged oxynitride layer due to removing the overlying photoresist pattern layer. A reworked photoresist pattern layer is formed on the oxynitride layer.
1. A method for enhancing adhesion between a reworked photoresist and an underlying oxynitride film, comprising the steps of:
providing a semiconductor substrate covered by a silicon oxynitride layer;
forming a first photoresist layer on the silicon oxynitride layer;
performing photolithography on the first photoresist layer to form a photoresist pattern layer on the silicon oxynitride layer;
removing the photoresist pattern layer by oxygen-containing plasma, wherein the silicon oxynitride layer is damaged by using oxygen-containing plasma;
performing a surface treatment on the silicon oxynitride layer using tetramethyl ammonium hydroxide (TMAH) solution to repair the damaged silicon oxynitride layer;
forming a second photoresist layer on the silicon oxynitride layer; and
performing photolithography on the second photoresist layer to form a reworked photoresist pattern layer on the silicon oxynitride layer.
2. The method as claimed in claim 1 , further performing an after development inspection (ADI) before removing the photoresist pattern layer.
3. The method as claimed in claim 1 , wherein the TMAH solution has a concentration of about 2% to %3.
4. The method as claimed in claim 1 , wherein the surface treatment is performed at 20° C. to 30° C.
5. The method as claimed in claim 1 , wherein the surface treatment is performed for 10 sec to 25 sec.
6. A method for enhancing adhesion between a reworked photoresist and an underlying oxynitride film, comprising the steps of:
providing a substrate covered by an oxynitride layer;
forming a photoresist pattern layer on the oxynitride layer;
removing the photoresist pattern layer, which causes the oxynitride layer damaged;
performing a surface treatment on the oxynitride layer using a development solution to repair the damaged oxynitride layer; and
forming a reworked photoresist pattern layer on the oxynitride layer.
7. The method as claimed in claim 6 , wherein the substrate is a semiconductor substrate.
8. The method as claimed in claim 6 , wherein the oxynitride layer is a silicon oxynitride layer.
9. The method as claimed in claim 6 , further performing an after development inspection (ADI) before removing the photoresist pattern layer.
10. The method as claimed in claim 6 , wherein the photoresist pattern layer is removed by an acidic solution.
11. The method as claimed in claim 6 , wherein the photoresist pattern layer is removed by oxygen-containing plasma.
12. The method as claimed in claim 6 , wherein the development solution is tetramethyl ammonium hydroxide (TMAH) solution.
13. The method as claimed in claim 12 , wherein the TMAH solution has a concentration of about 2% to %3.
14. The method as claimed in claim 12 , wherein the surface treatment is performed at 20° C. to 30° C.
15. The method as claimed in claim 12 , wherein the surface treatment is performed for 10 sec to 25 sec.
16. A method for enhancing adhesion between a reworked photoresist and an underlying oxynitride film, comprising the steps of:
providing a semiconductor substrate covered by a silicon oxynitride layer;
forming a first photoresist layer on the silicon oxynitride layer;
performing photolithography on the first photoresist layer to form a photoresist pattern layer on the silicon oxynitride layer;
removing the photoresist pattern layer by oxygen-containing plasma, wherein the silicon oxynitride layer is damaged by using oxygen-containing plasma;
performing a surface treatment on the silicon oxynitride layer using tetramethyl ammonium hydroxide (TMAH) solution with a concentration of about 2% to 3% to repair the damaged silicon oxynitride layer, wherein the surface treatment is performed at 20° C. to 30° C.;
forming a second photoresist layer on the silicon oxynitride layer; and performing photolithography on the second photoresist layer to form a reworked photoresist pattern layer on the silicon oxynitride layer.