IP Library › Granted Patent US 7,102,410
Granted Patent B2
US 7,102,410 · App. 10/865,363 · Granted Sep 5, 2006

High voltage level converter using low voltage devices

Assignee: Freescale Semiconductor, Inc.
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Quick Facts
Patent No.
US 7,102,410
App. No.
10/865,363
Granted
Sep 5, 2006
Kind
B2
Abstract

A circuit for converting an input signal at a first voltage level to an output signal at a second voltage level uses only thin oxide transistors. The circuit includes a first unit operating at a first power supply voltage and receiving the input signal, a second unit operating at a second power supply voltage, and a third unit coupling the first unit to the second unit. The third unit enables generation of the output signal. Use of an extra fabrication mask for thick oxide transistors is avoided by using only thin oxide transistors.

Claims (44)

1. A circuit for converting an input signal at a first voltage level to an output signal at a second voltage level, the circuit comprising:

a first unit operating at a first power supply voltage, the first unit receiving the input signal, wherein the first unit includes,

a first NMOS transistor having a gate connected to the input signal, a source connected to a reference voltage, and a drain;

a second NMOS transistor having a source connected to the reference voltage and a drain; and

an inverter having an input connected to the input signal and an output connected to a gate of the second NMOS transistor;

a second unit operating at a second power supply voltage, wherein the second unit includes,

a first PMOS transistor having a source connected to the second power supply voltage; and

a second PMOS transistor having a gate connected to a drain of the first PMOS transistor, a drain connected to a gate of the first PMOS transistor and a source connected to the second power supply voltage; and

a third unit coupling the first unit to the second unit, the third unit enabling generation of the output signal, wherein the third unit includes,

a third NMOS transistor having a source connected to the first unit and a gate connected to the first power supply voltage;

a fourth NMOS transistor having a source connected to the first unit and a gate connected to the first power supply voltage;

a third PMOS transistor having a gate connected to the first power supply voltage, a source connected to the second unit and a drain connected to a drain of the third NMOS transistor;

a fourth PMOS transistor having a gate connected to the first power supply voltage, a source connected to the second unit and a drain connected to a drain of the fourth NMOS transistor, wherein the output signal is generated at the drains of the third and fourth NMOS transistors;

a fifth PMOS transistor having a source connected to the first power supply voltage, a drain connected to the source of the third PMOS transistor, a bulk connected to its drain, and a gate connected to the drain of the third NMOS transistor; and

a sixth PMOS transistor having a source connected to the first power supply voltage, a drain connected to the source of the fourth PMOS transistor, a bulk connected to its drain, and a gate connected to the drain of the fourth NMOS transistor; and

wherein each of the first, second and third units consists essentially of thin oxide transistors.

2. The voltage level converting circuit of claim 1 , wherein a bulk of the third PMOS transistor is connected to the second power supply voltage, a bulk of the fourth PMOS transistor is connected to the second power supply, a bulk of the third NMOS transistor is connected to the reference voltage, and a bulk of the fourth NMOS transistor is connected to the reference voltage.

3. The voltage level converting circuit of claim 1 , wherein a bulk of the third PMOS transistor is connected to its source, a bulk of the fourth PMOS transistor is connected to its source, a bulk of the third NMOS transistor is connected to its source, and a bulk of the fourth NMOS transistor is connected to its source.

4. The voltage level converting circuit of claim 1 , wherein the first unit further comprises:

a seventh PMOS transistor having a gate connected to the gate of the first NMOS transistor, a source connected to the first power supply voltage, and a drain connected to the drain of the first NMOS transistor; and

an eighth PMOS transistors having a gate connected to a gate of the second NMOS transistor, a source connected to the first power supply voltage, and a drain connected to a drain of the second NMOS transistor.

5. The voltage level converting circuit of claim 1 , herein the inverter is connected to the first power supply voltage and the reference voltage.

6. A circuit for converting an input signal at a first voltage level to an output signal at a second voltage level, the circuit comprising:

a first unit operating at a first power supply voltage, the first unit comprising:

a first NMOS transistor having a gate connected to the input signal, a source connected to a reference voltage, and a drain;

a second NMOS transistor having a source connected to the reference voltage and a drain; and

an inverter having an input connected to the input signal and the gate of the first NMOS transistor, and an output connected to a gate of the second NMOS transistor;

a second unit operating at a second power supply voltage, the second unit comprising:

a first PMOS transistor having a source connected to the second power supply voltage; and

a second PMOS transistor having a gate connected to a drain of the first PMOS transistor, a drain connected to a gate of the first PMOS transistor and a source connected to the second power supply voltage; and

a third unit coupling the first unit to the second unit, the third unit comprising:

a third NMOS transistor having a source connected to the drain of the first NMOS transistor and a gate connected to the first power supply voltage;

a fourth NMOS transistor having a source connected to the drain of the second NMOS transistor and a gate connected to the first power supply voltage;

a third PMOS transistor having a gate connected to the first power supply voltage, a source connected to the drain of the first PMOS transistor and a drain connected to a drain of the third NMOS transistor; and

a fourth PMOS transistor having a gate connected to the first power supply voltage, a source connected to the drain of the second PMOS transistor, and a drain connected to a drain of the fourth NMOS transistor, wherein the output signal is generated at the drain of the fourth NMOS transistor;

a fifth PMOS transistor having a source connected to the first power supply voltage, a drain connected to the source of the third PMOS transistor, a bulk connected to its drain, and a gate connected to the drain of the third PMOS transistor; and

a sixth PMOS transistor having a source connected to the first power supply voltage, a drain connected to the source of the fourth PMOS transistor, a bulk connected to its drain, and a gate connected to the output signal; and

wherein each of the first, second and third units consists essentially of thin oxide transistors.

7. The voltage level converting circuit of claim 6 , wherein a bulk of the third PMOS transistor is connected to the second power supply voltage, a bulk of the fourth PMOS transistor is connected to the second power supply, a bulk of the third NMOS transistor is connected to the reference voltage, and a bulk of the fourth NMOS transistor is connected to the reference voltage.

8. The voltage level converting circuit of claim 6 , wherein a bulk of the third PMOS transistor is connected to its source, a bulk of the fourth PMOS transistor is connected to its source, a bulk of the third NMOS transistor is connected to its source, and a bulk of the fourth NMOS transistor is connected to its source.

9. The voltage level converting circuit of claim 6 , wherein the first unit further comprises:

a seventh PMOS transistor having a gate connected to the gate of the first NMOS transistor, a source connected to the first power supply voltage, and a drain connected to the drain of the first NMOS transistor; and

an eighth PMOS transistors having a gate connected to a gate of the second NMOS transistor, a source connected to the first power supply voltage, and a drain connected to a drain of the second NMOS transistor.

10. The voltage level converting circuit of claim 6 , wherein the inverter is connected to the first power supply voltage and the reference voltage.

Assignments (18)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NORTH STAR INNOVATIONS INC.
Reel/Frame 037694/0264 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0225 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0143 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0553 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
SECURITY AGREEMENT Recorded May 13, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 024397/0001 →
SECURITY AGREEMENT Recorded Feb 2, 2007
From: FREESCALE SEMICONDUCTOR, INC.; FREESCALE ACQUISITION CORPORATION; FREESCALE ACQUISITION HOLDINGS CORP.; FREESCALE HOLDINGS (BERMUDA) III, LTD.
To: CITIBANK, N.A. AS COLLATERAL AGENT
Reel/Frame 018855/0129 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 10, 2004
From: KHAN, QADEER A.; TRIPATHI, DIVYA; MISRI, KULBHUSHAN
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 015459/0834 →
Continuity (1)
Related Publication 20050275444A1 · Dec 15, 2005