Methods of forming capacitor devices
The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.
1. A method of forming a plurality of capacitor devices, comprising:
forming conductive capacitor electrode material within openings in a first material mass, the first material mass comprising silicon and oxygen;
providing a retaining structure in physical contact with at least some of the conductive capacitor electrode material, the retaining structure comprising a dielectric material, the dielectric material of the retaining structure comprising silicon and nitrogen;
removing at least some of the first material mass while the retaining structure physically contacts the at least some of the conductive capacitor electrode material;
after removing at least some of the first material mass, incorporating the conductive capacitor electrode material into a plurality of capacitor devices; and
wherein the first material mass is over the retaining structure.
2. The method of claim 1 wherein the conductive capacitor electrode material is formed within the openings in the shape of upwardly-opening container structures.
3. The method of claim 1 wherein the conductive capacitor electrode material fills the openings to form conductive pedestals within the openings.
4. The method of claim 1 wherein the first material mass consists of one or more electrically insulative materials.
5. The method of claim 1 wherein the first material mass comprises one or more of borophosphosilicate glass, spin-on-glass, silicon dioxide, phosphosilicate glass, borosilicate glass, and silicon nitride.
6. The method of claim 1 wherein the retaining structure comprises silicon nitride.
7. The method of claim 6 wherein the silicon nitride has a thickness of from about 50 Å to about 3000 Å.
8. The method of claim 1 wherein the first material mass comprises borophosphosilicate glass and the retaining structure comprises silicon nitride.
9. A method of forming a plurality of capacitor devices, comprising:
forming conductive capacitor electrode material within openings in a first material comprising silicon and oxygen;
providing a retaining structure in physical contact with at least some of the conductive capacitor electrode material;
removing at least some of the first material while the retaining structure physically contacts the at least some of the conductive capacitor electrode material;
after removing at least some of the first material, incorporating the conductive capacitor electrode material into a plurality of capacitor devices;
wherein:
the first material comprises borophosphosilicate glass;
a wet etch is utilized to remove at least same of the first material; and
the retaining structure comprises silicon nitride and a material having increased selectivity to borophosphosilicate glass than silicon nitride during the wet etch.
10. The method of claim 9 wherein the material having increased selectivity to borophosphosilicate glass than silicon nitride during the wet etch consists essentially of silicon.
11. The method of claim 9 wherein the material having increased selectivity to borophosphosilicate glass than silicon nitride during the wet etch includes polycrystalline silicon.
12. The method of claim 11 wherein the polycrystalline silicon is over the silicon nitride.
13. The method of claim 12 wherein the polycrystalline silicon has a thickness of from about 50 Å to about 1000 Å.
14. The method of claim 12 wherein the polycrystalline silicon has a thickness of from about 50 Å to about 1000 Å; and wherein the silicon nitride has a thickness of from about 50 Åto about 3000 Å.
15. The method of claim 11 wherein the polycrystalline silicon is under the silicon nitride.
16. The method of claim 11 wherein the polycrystalline silicon is over and under the silicon nitride.
17. The method of claim 16 wherein the polycrystalline silicon below the silicon nitride has a thickness of from about 50 Å to about 500 Å; wherein the polycrystalline silicon above the silicon nitride has a thickness of from about 50 Å to about 500 Å; and wherein the silicon nitride has a thickness of from about 50 Å to about 1000 Å.
18. The method of claim 11 wherein the polycrystalline silicon entirely surrounds the silicon nitride.