Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device comprises the steps of forming a first insulating film 9, 10 above a semiconductor substrate 1 ; forming a capacitor Q having a lower electrode 11 a , a dielectric film 13 a , and an upper electrode 14 c on the first insulating film 9, 10 ; forming a second insulating film 15, 15 a, 16 coating the capacitor Q; and forming a stress-controlling insulating film 30 on the rear surface of the semiconductor substrate 1 after the second insulating film 15, 15 a, 16 have been formed.
1. A method of manufacturing a semiconductor device comprising the steps of:
forming a transistor on a semiconductor substrate;
forming a first insulating film above said transistor;
forming a capacitor, which has a lower electrode, a dielectric film, and an upper electrode, on said first insulating film;
forming a second insulating film coating said capacitor; and
forming a stress-controlling insulating film on the rear surface of said semiconductor substrate after said second insulating film is formed.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein
said second insulating film and said stress-controlling insulating film have same compressive stress as each other or same tensile stress as each other.
3. The method of manufacturing a semiconductor device according to claim 1 , wherein
said second insulating film and said stress-controlling insulating film severally have a multilayer structure of two layers or more.
4. The method of manufacturing a semiconductor device according to claim 1 , wherein
said second insulating film and said stress-controlling insulating film have a single layer structure of an insulating film containing silicon or a multilayer structure of insulating films containing silicon.
5. The method of manufacturing a semiconductor device according to claim 1 , wherein
said second insulating film and said stress-controlling insulating film are deposited by a chemical vapor deposition method.
6. The method of manufacturing a semiconductor device according to claim 5 , wherein
said second insulating film and said stress-controlling insulating film are formed at deposition temperature of 400° C. or lower.
7. The method of manufacturing a semiconductor device according to claim 5 , wherein
said second insulating film and said stress-controlling insulating film are deposited by said chemical vapor deposition method and deposition conditions same as each other.
8. The method of manufacturing a semiconductor device according to claim 1 , wherein
a material of said dielectric film of said capacitor is ferroelectric.
9. The method of manufacturing a semiconductor device according to claim 1 , wherein
a plurality of capacitors are formed on said lower electrode, and said lower electrode is common to said plurality of capacitors.
10. The method of manufacturing a semiconductor device according to claim 1 , in which said lower electrode of said capacitor has a contact region that is not covered by said dielectric film and said upper electrode, and said method, after said second insulating film is formed, further comprises the steps of:
forming a first hole penetrating said first and second insulating films above said transistor;
forming a second hole penetrating said second insulating film above said contact region;
forming a third hole penetrating said second insulating film above said upper electrode of said capacitor;
forming a wiring, which connects said lower electrode with said transistor via said first and second holes, on said second insulating film; and
forming a wiring, which connects said upper electrode with said transistor via said third hole, on said second insulating film.
11. The method of manufacturing a semiconductor device according to claim 9 , in which said lower electrode of said capacitors has a contact region that is not covered by said dielectric film and said upper electrodes, and said method, after said second insulating film is formed, further comprises the steps of:
forming a first hole penetrating said first and second insulating films above said transistor;
forming a second hole penetrating said second insulating film above said contact region;
forming a third hole penetrating said second insulating film above said upper electrode of said capacitor;
forming a wiring, which connects said lower electrode with said transistor via said first and second holes, on said second insulating film; and
forming a wiring, which connects said upper electrode with said transistor via said third hole, on said second insulating film.
12. The method of manufacturing a semiconductor device according to claim 10 , said method further comprising the step of:
annealing said capacitor after the step of forming said capacitor.
13. The method of manufacturing a semiconductor device according to claim 12 , wherein
the step of annealing said capacitor is performed in oxygen atmosphere through said third hole after the step of forming the third hole, which penetrates said second insulating film, above the upper electrode of said capacitor.
14. The method of manufacturing a semiconductor device according to claim 10 , said method further comprising the step of:
removing said stress-controlling insulating film after the step of forming said wiring.
15. The method of manufacturing a semiconductor device according to claim 1 , in which said lower electrode is connected with said transistor via said hole penetrating the first insulating film immediately under the lower electrode of said capacitor, and said method, after said second insulating film is formed, further comprises the steps of:
forming a fourth hole penetrating said second insulating film above said upper electrode of said capacitor; and
forming a wiring connecting with said upper electrode via said fourth hole on said second insulating film.
16. The method of manufacturing a semiconductor device according to claim 9 , in which said lower electrode is connected with said transistor via said hole penetrating the first insulating film immediately under the lower electrode of said capacitors, and said method, after said second insulating film is formed, further comprises the steps of:
forming a fourth hole penetrating said second insulating film above said upper electrode of said capacitor; and
forming a wiring connecting with said upper electrode via said fourth hole on said second insulating film.
17. The method of manufacturing a semiconductor device according to claim 15 , said method further comprising the step of:
annealing said capacitor after the step of forming said capacitor.
18. The method of manufacturing a semiconductor device according to claim 17 , wherein
the step of annealing said capacitor is performed in oxygen atmosphere through said fourth hole after the step of forming the fourth hole, which penetrates said second insulating film, above the upper electrode of said capacitor.
19. The method of manufacturing a semiconductor device according to claim 15 , said method further comprising the step of:
removing said stress-controlling insulating film after the step of forming said wiring.