Isolation methods in semiconductor devices
Methods of forming a device isolation layer in a semiconductor substrate are disclosed. A disclosed method includes: forming a trench in a field area of a semiconductor substrate, growing a SiON layer on an inside of the trench by annealing in an ambience of NO gas, and filling the trench with a trench-fill material.
1. An isolation method comprising:
forming a trench in a semiconductor substrate;
growing a SiON layer on an inside of the trench by annealing in an ambience of NO gas performing heavy nitrogen ion implantation on the SiON layer; and
filling the trench with a trench-fill material.
2. An isolation method as defined in claim 1 , wherein the annealing is performed for about 5˜30 minutes at a temperature of about 850˜950° C. in the ambience of the NO gas diluted to about 9.5:1˜8.2 l/min.