Silicon nitride film, a semiconductor device, a display device and a method for manufacturing a silicon nitride film
View Patent ↗The present invention provides a method for forming by plasma CVD a silicon nitride film that can be formed over heat-sensitive elements as well as an electroluminescent element and that has favorable barrier characteristics. Further, the present invention also provides a semiconductor device, a display device and a light-emitting display device formed by using the silicon nitride film. In the method for forming a silicon nitride film by plasma CVD, silane (SiH 4 ), nitrogen (N 2 ) and a rare gas are introduced into a deposition chamber in depositing, and the reaction pressure is within the range from 0.01 Torr to 0.1 Torr.
1. A light emitting display device comprising:
a thin film transistor formed over a substrate;
a light-emitting formed over the thin film transistor and connected to the thin film transistor;
an auxiliary wiring over the light-emitting element; and
a passivation film comprising silicon nitride formed over the auxiliary wiring,
wherein the passivation film contains a rare gas element at a concentration of 0.3 atomic % or more,
wherein the passivation film contains hydrogen at a concentration of less than 25 atomic %, and
wherein an etching rate of the passivation film on a buffered hydrogen fluoride including HF of 4.7% and NH 4 F of 36.3% at room temperature is 30.0 nm/min or less.
2. A light-emitting display device according to claim 1 , wherein the rare gas is any one of helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe).
3. A light-emitting display device according to claim 1 , wherein an etching rate of the passivation film is 20.0 nm/min or less.
4. An electronic device having light-emitting display device according to claim 1 .
5. A cellular phone having the having light-emitting device according to claim 1 .
6. A digital camera having the light-emitting display device according to claim 1 .
7. A mobile computer having the light-emitting display device according to claim 1 .
8. A light emitting display device comprising:
a thin film transistor formed over a substrate;
a light emitting element formed over the thin film transistor and connected to the thin film transistor; and
a passivation film comprising silicon nitride formed over the light emitting element,
wherein the passivation film contains a rare gas element at a concentration of 03 atomic % or more; and
wherein the passivation film contains hydrogen at a concentration of less than 25 atomic %,
wherein an etching rate of the passivation film on a buffered hydrogen fluoride including HF of 4.7 and NH 4 F of 36.3 at room temperature is 30.0 nm/min or less.
9. A light-emitting display device according to claim 8 , wherein the rare gas is any one of helium (he), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe).
10. A light-emitting display device according to claim 8 , wherein an etching rate of the passivation film is 20.0 nm/min or less.
11. An electronic device having the light-emitting display device according to claim 8 .
12. A cellular phone having the light-emitting device according to claim 8 .
13. A digital camera having the light-emitting display device according to claim 8 .
14. A mobile computer having the light-emitting display device according to claim 8 .
15. A light emitting display device comprising:
a thin film transistor formed over a substrate;
a light-emitting element formed over the thin film transistor and connected to the thin film transistor;
an auxiliary wiring over the light-emitting element; and
a passivation film comprising silicon nitride formed over the auxiliary wiring,
wherein the passivation film contains a rare gas element at a concentration of 0.3 atomic % or more;
wherein the passivation film contains oxygen at a concentration of 4.0 atomic % or more;
wherein the passivation film contains hydrogen at a concentration of less than 25 atomic %, and
wherein an etching rate of the passivation film on a buffered hydrogen fluoride including HF of 4.7% and NH 4 F of 36.3% at room temperature is 30.0 nm/min or less.
16. A light-emitting display device according to claim 15 , wherein the rare gas is any one of helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe).
17. A light-emitting display device according to claim 15 , wherein an etching rate of the passivation film is 20.0 nm/min or less.
18. An electronic device having the lighting-emitting display device according to claim 15 .
19. A cellular phone having the light-emitting device according to claim 15 .
20. A digital camera having the light-emitting display device according to claim 15 .
21. A mobile computer having the light-emitting display device according to claim 15 .
22. A light emitting display device comprising:
a thin film transistor formed over a substrate;
a light-emitting element formed over the thin film transistor and connected to the thin film transistor; and
a passivation film comprising silicon nitride formed over the light emitting element,
wherein the passivation film contains a rare gas element at a concentration of 0.3 atomic % or more;
wherein the passivation film contains oxygen at a concentration of 4.0 atomic % or more;
wherein the passivation film contains hydrogen at a concentration of less than 25 atomic %; and
wherein an etching rate of the passivation film on a buffered hydrogen fluoride including HF of 4.7 and NH 4 F of 36.3 at room temperature is 30.0 nm/min or less.
23. A light-emitting display device according to claim 22 , wherein the rare gas is any one of helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe).
24. A light-emitting display device according to claim 22 , wherein an etching rate of the passivation film is 20.0 nm/min or less.
25. An electronic device having light-emitting display device according claim 22 .
26. A cellular phone having the light-emitting device according to claim 22 .
27. A digital camera having the light-emitting display device according to claim 22 .
28. A mobile computer having the light-emitting display device according to claim 22 .