Semiconductor die package using leadframe and clip and method of manufacturing

1. A clip structure for a semiconductor package, the clip structure comprising:

a major portion comprising a horizontal surface;

a plurality of pedestals extending from the horizontal surface of the major portion;

a downset portion; and

a lead portion,

wherein the downset portion is between the lead portion and the major portion.

2. The clip structure of claim 1 wherein the clip structure is a source clip structure or a gate clip structure.

3. The clip structure of claim 1 wherein the downset portion includes a stepped configuration.

4. A semiconductor die package comprising:

the clip structure of claim 1 ;

a semiconductor die coupled to the clip structure; and

a molding material at least partially covering the clip structure and the semiconductor die.

5. The semiconductor die package of claim 4 further comprising a leadframe structure, wherein the semiconductor die is between the leadframe structure and the clip structure.

6. The semiconductor die package of claim 4 wherein the semiconductor die comprises a vertical power MOSFET.

7. The semiconductor die package of claim 5 wherein the clip structure further comprises an exterior clip structure surface, wherein the exterior clip structure surface is exposed by the molding material and is substantially coplanar with an exterior molding material surface.

8. The semiconductor die package of claim 7 wherein the exterior molding material surface is a first exterior molding material surface and wherein the leadframe structure has a leadframe surface that is substantially coplanar with a second exterior molding material surface.

9. The semiconductor die package of claim 7 wherein the semiconductor die is a first semiconductor die and wherein the semiconductor die package further comprises a second semiconductor die coupled to the molding material.

10. The semiconductor die package of claim 9 wherein the molding material comprise an epoxy molding material.

11. The semiconductor die package of claim 10 wherein the package further comprises solder and wherein the solder contacts the semiconductor die and the horizontal surface, and also surrounds the pedestals.

12. The semiconductor die package of claim 5 wherein the package further comprises solder and the solder contacts the semiconductor die and the horizontal surface, and also surrounds the pedestals.

13. The semiconductor die package of claim 5 further comprising solder disposed around at least one of the pedestals and contacting the horizontal surface and the die, and wherein the die contacts the pedestals.

14. A semiconductor die package comprising:

a clip structure comprising a major portion comprising a horizontal surface, a plurality of pedestals extending from the horizontal surface of the major portion, a downset portion, and a lead portion, wherein the downset portion is between the lead portion and the major portion, and has a stepped configuration;

a leadframe structure; and

a semiconductor die,

wherein the semiconductor die is between the leadframe structure and the clip structure.

15. The semiconductor die package of claim 14 further comprising a molding material covering at least part of the clip structure, the leadframe structure, and the semiconductor die.

16. A semiconductor die package comprising:

a clip structure comprising a major portion, at least one pedestal extending from the major portion a downset portion, and a lead portion, wherein the downset portion is between the lead portion and the major portion, and has a stepped configuration;

a leadframe structure; and

a semiconductor die,

wherein the semiconductor die is between the leadframe structure and the clip structure, wherein the semiconductor die package is a MLP (micro-leadframe package) and comprises a power MOSFET.

17. The semiconductor die package of claim 14 wherein the package further comprises solder and wherein solder contacts the semiconductor die and the horizontal surface, and also surrounds the pedestals.

18. The semiconductor die package of claim 17 wherein the die comprises a vertical MOSFET comprising a trenched gate structure.

19. The semiconductor die package of claim 18 wherein the leadframe structure comprises copper.

20. The semiconductor die package of claim 14 further comprising solder disposed around at least one of the pedestals and contacting the horizontal surface and the die, and wherein the die contacts the pedestals.