Laser irradiation method, method for manufacturing a semiconductor device, and a semiconductor device
View Patent ↗The present invention discloses the semiconductor device having the substrate that reflects the laser beam on a surface; that absorbs the laser beam therein; or that partially reflects the laser beam on the surface and partially absorbs the laser beam in the laser annealing. Moreover, the substrate has a poly-crystalline semiconductor film having a large grain size. The present invention suppresses the effect due to the reflected light from a rear surface of the substrate and therefore the uniform laser annealing can be performed.
1. A semiconductor device comprising:
a crystalline semiconductor film over a surface of a substrate,
wherein an absorption coefficient α of the substrate to a light satisfies an inequality of α≧ln10/2d where d is a thickness of the substrate, where the light is capable of being absorbed by the crystalline semiconductor film and partially transmitting through the crystalline semiconductor film to reach the surface of the substrate.
2. The semiconductor device according to claim 1 ,
wherein a wavelength of the light is same as a laser light used to crystallize the crystalline semiconductor film.
3. The semiconductor device according to claim 1 ,
wherein the light is a visible light.
4. The semiconductor device according to claim 1 ,
wherein the substrate is an insulator.
5. A semiconductor device comprising:
a substrate having a first surface and a second surface; and
a crystalline semiconductor film over the first surface of the substrate,
wherein a light is partially reflected on the first surface of the substrate, and
wherein a ratio of the light reflected on the second surface of the substrate is 0.4% or less.
6. The semiconductor device according to claim 5 ,
wherein a wavelength of the light is same as a laser light used to crystallize the crystalline semiconductor film.
7. The semiconductor device according to claim 5 ,
wherein the light is a visible light.
8. The semiconductor device according to claim 5 ,
wherein the substrate is an insulator.
9. A semiconductor device comprising:
a crystalline semiconductor film over a surface of a substrate,
wherein an absorption coefficient α of the substrate to a light satisfies an inequality of α≧ln10/2d where d is a thickness of the substrate, where the light is capable of being absorbed by the crystalline semiconductor film and partially transmitting through the crystalline semiconductor film to reach the surface of the substrate, and
wherein the substrate comprises a material which is opaque to the light.
10. The semiconductor device according to claim 9 ,
wherein a wavelength of the light is same as a laser light used to crystallize the crystalline semiconductor film.
11. The semiconductor device according to claim 9 ,
wherein the light is a visible light.
12. The semiconductor device according to claim 9 ,
wherein the substrate is an insulator.
13. The semiconductor device according to claim 9 ,
wherein the substrate is a colored glass substrate.
14. A semiconductor device comprising:
a semiconductor film over a surface of a substrate,
wherein an absorption coefficient α of the substrate to a light satisfies an inequality of α≧ln10/2d where d is a thickness of the substrate, where the light is capable of being absorbed by the semiconductor film and partially transmitting through the semiconductor film to reach the surface of the substrate.
15. The semiconductor device according to claim 14 ,
wherein a wavelength of the light is same as a laser light used to crystallize the semiconductor film.
16. The semiconductor device according to claim 14 ,
wherein the light is a visible light.
17. The semiconductor device according to claim 14 ,
wherein the substrate is an insulator.