Systems and methods for forming metal oxide layers

1. A method of manufacturing a semiconductor structure, the method comprising:

providing a semiconductor substrate or substrate assembly within a deposition chamber;

providing a vapor comprising at least one precursor compound of the formula M(NR 1 R 2 ) x (NR 3 ) y , wherein:

M is a metal;

R 1 , R 2 , and R 3 are each independently hydrogen or an organic group;

x is 1 or more; and

y is 0 or more, wherein the values of x and y are dependent on the oxidation state of M;

providing a vapor comprising at least one source of ozone; and

contacting the at least one precursor compound and the at least one source of ozone to form a metal oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process;

with the proviso that M is not silicon when the vapor deposition process is a chemical vapor deposition process.

2. The method of claim 1 wherein the precursor compounds are directed to the semiconductor substrate or substrate assembly in the presence of an inert carrier gas.

3. The method of claim 1 wherein the metal oxide layer is essentially free of carbon, nitrogen, and halogens, or compounds thereof.

4. The method of claim 1 wherein the metal oxide layer is a dielectric layer.

5. The method of claim 4 wherein the metal oxide dielectric layer is in the form of an alloy, a solid solution, or a nanolaminate.

6. The method of claim 1 wherein R 1 , R 2 , and R 3 are each independently hydrogen or organic groups having 1-10 carbon atoms.

7. The method of claim 1 wherein R 1 , R 2 , and R 3 are each independently organic groups containing silicon substituted for one or more carbon atoms.

8. The method of claim 1 wherein M is independently selected from the group of metals consisting of Group 3, Group 4, Group 5, Group 13, lanthanides, and combinations thereof.

9. The method of claim 8 wherein M is independently selected from the group of metals consisting of Ti, Hf, Nb, Ta, Al, Zr, and combinations thereof.

10. The method of claim 1 wherein the metal oxide layer has a thickness of about 30 Å to about 100 Å.

11. The method of claim 1 wherein y is 0 to 4 and x is 1 to 8.

12. The method of claim 11 wherein y is 0 thereby providing at least one precursor compound of the formula M(NR 1 R 2 ) x , wherein a value of x is dependent on the oxidation state of M.

13. The method of claim 12 wherein M is independently selected from the group of metals consisting of Groups 3, 4, 5, lanthanides, and combinations thereof.

14. The method of claim 13 wherein M is independently selected from the group of metals consisting of Ti, Zr, Hf, Nb, Ta, and combinations thereof.

15. The method of claim 1 wherein the metal oxide layer comprises a zirconium oxide, an aluminum oxide, a titanium oxide, a niobium oxide, a tantalum oxide, a hafnium oxide, an oxide of a lanthanide, or combinations thereof.

16. The method of claim 1 further comprising providing a silicon-containing precursor compound to form a metal oxide layer comprising a solid solution comprising a silicon oxide.

17. The method of claim 1 wherein providing and contacting the at least one precursor compound is accomplished using a chemical vapor deposition process.

18. The method of claim 17 wherein the temperature of the semiconductor substrate or substrate assembly is about 100° C. to about 600° C.

19. The method of claim 1 wherein providing and contacting the at least one precursor compound is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.

20. The method of claim 19 wherein during the atomic layer deposition process the metal oxide layer is formed by alternately introducing the precursor compound and the at least one source of ozone during each deposition cycle.

21. The method of claim 20 wherein the temperature of the semiconductor substrate or substrate assembly is about 25° C. to about 400° C.