Photoresist composition and method pattern forming using the same
View Patent ↗This invention relates to a negative photoresist composition with multi-reaction models. When the photoresist composition according to the present invention is used in photolithography processes employing UV light to produce cross-link reactions and multi-reactions including radical polymerization and cationic polymerization also occur. The photoresist composition can be used to control light reaction efficiency and increase reaction thoroughness, thus obtaining a high resolution pattern.
1. A negative photoresist composition with multi-reaction systems, comprising the following components as a uniform solution in an organic solvent:
at least one unsaturated resin having a molecular weight in the range from 10,000 to 100,000 and an acid value between 70 and 150 mgKOH/g, selected from the group consisting of homopolymers, copolymers, and combinations thereof, which the homopolymers and the copolymers are synthesized by at least one monomer selected from the group consisting of styrene, methyl styrene, acrylic acid, acrylate, methyl acrylic acid, methyl acrylate, vinyl ether, and combinations thereof;
at least one photoinitiator in an amount of 0.1 to 10 parts by weight, based on 100 parts by weight of the unsaturated resin, wherein the photoinitiator is selected from the group consisting of benzoin, benzoin alkyl ether, benzil ketals, acetophenones derivatives, benzophenone, 4,4′-dimethyl-amino-benzophenone, thioxanthones derivatives, morpholino-1-propanone, and combinations thereof;
at least one free radical reactive monomer in an amount of 0.1 to 100 parts by weight, wherein the free radical reactive monomer is selected from the group consisting of tetraethylene glycol diacrylate, tetraethylene glycol dimethacrylate, neopentylglycol diacrylate, neopentylglycol dimethyl acrylate, polyethylene glycol diacrylate, polyethylene glycol dimethylacrylate, ethoxylated bisphenol A glycol diacrylate, ethoxylated bisphenol A glycol dimethyl acrylate, trimethylolpropane trimethacrylate, trimethyloipropane triacrylate, pentaerythritol triacrylate, ethoxylated trimethyloipropane triacrylate, glyceryl propoxy triacrylate, pentaerythritol tetraacrylate, dipentaerythritol pentaacrylate, glycidyl acrylate, glycidylmethyl acrylate, p-epoxy-styrene, p-glycidyl-styrene, allyl glycidyl ether, 3-glycidyloxy-propy l-trimethoxy silane, β-(3,4-epoxycyclohexyl)-ethyl trimethoxysilane, γ-glycidoxypropyl trimethoxysilane, and combinations thereof;
at least one photoacid generator in an amount of 0.1 to 35 parts by weight, wherein the photoacid generator is triaryl sulfonium hexafluorophosphate, triphenyl triflate, triphenyl stibnite, methoxy triphenyl triflate, methoxy triphenyl stibnite, trimethyl triphenyl triflate or combinations thereof; and
at least one cation reactive monomer in an amount of 0.1 to 35 parts by weight, wherein the cation reactive monomer is selected from the group consisting of cycloaliphatic diepoxide, N,N-diglycidyl-4-glycidyloxyaniline, 3,4-epoxycyclohexylmethyl carboxylate, 3,4-epoxycyclohexane carboxylate, 1,2-cyclohexane diglycidyl dicarboxylate, 1,4-cyclohexane dimethanol diglycidyl ether, ethylene glycol divinyl ether, diethylene glycol divenyl ether, triethylene glycol divinyl ether, 1,4-cyclohexane dimethanol divinyl ether, lactones and combinations thereof;
at least one epoxy resin in an amount of 0.1 to 50 parts by weight, based on 100 parts by weight of the unsaturated resin, wherein the epoxy resin is selected from the group consisting of bisphenol A epoxy resin, brominated epoxy resin, phenolic novolac epoxy resin, cresol novolac epoxy resin, naphthalene epoxy, dicyclopendiene novolac epoxy, cycloaliphatic epoxy, isocyanate epoxy and combinations thereof; and
at least one resin hardener in an amount of 0.1 to 30 parts by weight, wherein the the resin hardener is selected from the group consisting of aliphatic amine, aromatic amine, polyamide, dicyandiamide, imidazoles, anhydride and combinations thereof.
2. The negative photoresist composition as claimed in claim 1 , wherein the multi-reaction systems comprise free-radical polymerizations and cation polymerizations.
3. The negative photoresist composition as claimed in claim 1 , wherein the at least one free radical reactive monomer is present in an amount of 5-25 parts by weight, based on 100 parts by weight of the unsaturated resin.
4. The negative photoresist composition as claimed in claim 1 , wherein the at least one photoacid generator is present in an amount of 0.1-10 parts by weight, based on 100 parts by weight of the unsaturated resin.
5. The negative photoresist composition as claimed in claim 1 , wherein the at least one cation reactive monomer is present in an amount of 5-25 parts by weight, based on 100 parts by weight of the unsaturated resin.