IP Library Granted Patent US 7,341,946
Granted Patent B2
US 7,341,946 · App. 10/705,579 · Granted Mar 11, 2008

Methods for the electrochemical deposition of copper onto a barrier layer of a work piece

Assignee: Novellus Systems, Inc.
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Quick Facts
Patent No.
US 7,341,946
App. No.
10/705,579
Granted
Mar 11, 2008
Kind
B2
Abstract

Methods are provided for electrochemically depositing copper on a work piece. One method includes the step of depositing overlying the work piece a barrier layer having a surface and subjecting the barrier layer surface to a surface treatment adapted to facilitate deposition of copper on the barrier layer. Copper then is electrochemically deposited overlying the barrier layer.

Claims (29)

1. A method for depositing copper overlying a work piece, the method comprising the steps of:

depositing overlying the work piece a barrier layer having a surface;

forming a protective layer that overlies said surface of said barrier layer and that inhibits oxidation of said surface, wherein said protective layer is formed by exposing said barrier layer to diborane, a sulfur-containing gas, or a phosphorous-comprising gas;

removing said protective layer; and

after removing said protective layer, electrochemically depositing copper overlying said barrier layer.

2. The method of claim 1 , wherein the step of electrochemically depositing comprises depositing by electroplating or depositing by electrochemical mechanical deposition.

3. The method of claim 1 , wherein the step of depositing overlying a work piece a barrier layer comprises depositing overlying the work piece a layer comprising a material selected from the group consisting of ruthenium, cobalt, molybdenum, tungsten, rhodium, palladium, osmium, rhenium, iridium, and platinum.

4. The method of claim 1 , wherein the step of forming a protective layer comprises forming a protective layer having a thickness no greater than about 20 angstroms.

5. The method of claim 1 , wherein the step of removing said protective layer comprises the step of removing said protective layer using an etchant.

6. The method of claim 5 , wherein the step of removing said protective layer using an etchant comprises the step of exposing said protective layer to a solution formed of sulfuric acid, nitric acid, or a combination of sulfuric acid and hydrogen peroxide.

7. The method of claim 1 , wherein the step of removing said protective layer comprises the step of removing said protective layer using a copper plating solution.

8. The method of claim 1 , wherein the step of depositing a barrier layer comprises the step of forming a barrrier layer by a process selected from the group comprising CVD, ALD, PVD, and electroless deposition.

9. The method of claim 1 , wherein the step of depositing a barrier layer and the step of forming a protective layer are performed in the same processing apparatus.

10. The method of claim 9 , wherein the step of depositing a barrier layer and the step of forming a protective layer are performed in the same processing chamber of a processing apparatus.

11. A method for depositing copper overlying a work piece, the method comprising the steps of:

depositing overlying the work piece a barrier layer having a surface;

removing from said surface of said barrier layer a contaminant, an oxide, or both by applying to said surface of said barrier layer an initial cathode current pulse of no less than about 25 mA/cm 2 for about 0.5 to about 10 seconds; and

after the step of applying to said surface of said barrier layer an initial cathode current pulse, electrochemically depositing copper overlying said barrier layer.

12. The method of claim 11 , wherein an anodic current is applied to said surface of said barrier layer before the step of applying to said surface of said barrier layer an initial cathodic current pulse.

13. The method of claim 11 , wherein the step of electrochemically depositing comprises depositing by electroplating or depositing by electrochemical mechanical deposition.

14. The method of claim 11 , wherein the step of depositing overlying a work piece a barrier layer comprises depositing overlying the work piece a layer of material selected from the group comprising ruthenium, cobalt, molybdenum, tungsten, rhodium, palladium, osmium, rhenium, iridium, and platinum.

15. The method of claim 11 , wherein the step of depositing a barrier layer comprises the step of forming a barrier layer by a process selected from the group comprising CVD, ALD, PVD, and electroless deposition.

16. A method for depositing copper overlying a work piece, the method comprising the steps of:

depositing overlying the work piece a barrier layer having a surface;

forming a protective layer that overlies said surface of said barrier layer and that inhibits oxidation of said surface, wherein said protective layer is formed by exposing said surface to a sulfur-containing gas, a phosphorous-containing gas, or a combination thereof; and

after forming said protective layer, electrochemically depositing copper overlying said barrier layer.

17. The method of claim 16 , wherein the step of electrochemically depositing comprises at least one of depositing by electroplating and depositing by electrochemical mechanical deposition.

18. The method of claim 16 , wherein the step of depositing overlying a work piece a barrier layer comprises depositing overlying the work piece a layer of material selected from the group comprising ruthenium, cobalt, molybdenum, tungsten, rhodium, palladium, osmium, rhenium, iridium, and platinum.

19. The method of claim 16 , wherein the step of depositing a barrier layer comprises the step of forming a barrier layer by a process selected from the group comprising CVD, ALD, PVD, and electroless deposition.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 10, 2003
From: KAILASAM, SRIDHAR K.; DREWERY, JOHN; REID, JONATHAN D.; WEBB, ERIC G.; SUKAMTO, JOHANES H.
To: NOVELLUS SYSTEMS, INC.
Reel/Frame 014697/0237 →
Continuity (1)
Related Publication 20050098440A1 · May 12, 2005