Method for producing silicon nitride films and process for fabricating semiconductor devices using said method
View Patent ↗Silicon nitride film is formed on a silicon wafer mounted in a boat in an LPCVD tool by feeding a silicon source (SiH 2 Cl 2 , SiCl 4 , Si 2 Cl 6 , etc.) from an injector and feeding a mixed gas of monomethylamine (CH 3 NH 2 ) and ammonia (NH 3 ) as the nitrogen source from an injector. This addition of monomethylamine to the source substances for film production makes it possible to provide an improved film quality and improved leakage characteristics even at low temperatures (450-600° C.).
1. A method which may be used for forming a silicon nitride film with a gaseous silicon source, a gaseous nitrogen source, and a gaseous carbon-hydrogen source, wherein:
a) said silicon source comprises at least silicon;
b) said nitrogen source comprises at least nitrogen; and
c) said carbon-hydrogen source comprises methylamine.
2. The method of claim 1 , wherein said nitrogen source further comprises at least one compound comprising a methyl group.
3. The method of claim 1 , wherein said nitrogen source further comprises at least one compound comprising an alkyl group.
4. The method of claim 1 , wherein said carbon-hydrogen source further comprises nitrogen and at least one compound comprising a methyl group.
5. The method of claim 1 , wherein said carbon-hydrogen source further comprises nitrogen and a compound comprising an alkyl group.
6. The method of claim 1 , further comprising forming said silicon nitride film by low pressure CVD.
7. The method of claim 1 , wherein:
a) the ratio of the concentration of nitrogen to silicon in said silicon nitride film is in the range of about 0.7:1 to about 1.3:1; and
b) the ratio of the concentration of carbon to silicon in said silicon nitride film is in the range of about 0.1:1 to about 0.6:1.
8. The method of claim 1 , wherein:
a) said silicon source comprises at least one member selected from the group consisting of:
1) dichlorosilane;
2) tetrachlorosilane; and
3) hexachlorodisilane; and
b) said nitrogen source comprises at least one member selected from the group consisting of:
1) monomethylamine;
2) dimethylamine; and
3) trimethylamine.
9. A method which may be used for forming a silicon nitride film in a semiconductor device, comprising forming a silicon nitride film with a gaseous silicon source, a gaseous nitrogen source, and a gaseous carbon-hydrogen source, wherein:
a) said silicon source comprises at least silicon;
b) said nitrogen source comprises at least nitrogen; and
c) said carbon-hydrogen source methylamine.
10. The method of claim 9 , wherein said film is formed on a semiconductor device component, wherein said component comprises at least one member selected from the group consisting of:
a) the sidewalls of a gate dielectric film;
b) a gate electrode;
c) a source electrode; and
d) a drain electrode.
11. The method of claim 6 , wherein said silicon nitride film is formed at a temperature between about 450° C. and about 600° C.
12. The method of claim 9 , wherein:
a) said method further comprises forming said silicon nitride film by low pressure CVD; and
b) said silicon nitride film is formed at a temperature between about 450° C. and about 600° C.