Strained Si/SiGe/SOI islands and processes of making same
A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under the active area to partially vertically isolate the active area. A thermal oxidation completes the vertical isolation by use of a minifield oxidation process. The recess is filled to form a shallow trench isolation structure. An active device is also disclosed that is achieved by the process. A system is also disclosed that uses the active device.
1. An integrated circuit, comprising:
a single crystal semiconductor substrate;
at least one crystal damage region disposed at a predetermined distance below a top surface of the single crystal semiconductor substrate;
an insulator layer disposed above at least a remaining portion of the crystal damage region;
two or more electrically isolated semiconductor regions disposed above the insulator layer;
a strained semiconductor layer disposed above substantially all of the two or more electrically isolated semiconductor regions;
at least two diffused regions in each one of substantially all of the two or more electrically isolated semiconductor regions;
at least one gate disposed above and separated from each one of substantially all of the two or more electrically isolated semiconductor regions; and
electrical connections to interconnect each one of substantially all of the two or more electrically isolated semiconductor regions to each other and to external electrical devices.
2. The integrated circuit of claim 1 , wherein the damage region is ion implanted.
3. The integrated circuit of claim 2 , wherein the ion implanted comprises silicon.
4. The integrated circuit of claim 1 , wherein the damage region is substantially amorphous.
5. The integrated circuit of claim 1 , wherein the damage region is at least partially recrystallized over at least an upper portion of the crystal damage region.
6. The integrated circuit of claim 1 , wherein the insulator layer comprises a thermal oxide.
7. The integrated circuit of claim 6 , wherein the thermal oxide comprises a mini field oxide.
8. The integrated circuit of claim 6 , wherein the thermal oxide comprises a high pressure oxide.
9. The integrated circuit of claim 6 , wherein the thermal oxide comprises a flattened field oxide.
10. The integrated circuit of claim 6 , wherein the thermal oxide comprises facet faces at an oxide to substrate interface.
11. The integrated circuit of claim 1 , wherein the substrate comprises silicon.
12. The integrated circuit of claim 1 , wherein the isolated semiconductor region comprises a compound semiconductor.
13. The integrated circuit of claim 1 , wherein the isolated semiconductor region comprises a relaxed semiconductor.
14. The integrated circuit of claim 12 , wherein the isolated semiconductor region comprises a silicon germanium compound.
15. The integrated circuit of claim 1 , wherein the strained semiconductor layer comprises silicon.
16. The integrated circuit of claim 15 , wherein the strained silicon layer comprises a biaxially tensile strained layer.
17. The integrated circuit of claim 15 , wherein the strained silicon layer comprises a layer exhibiting a higher carrier mobility and a higher drift velocity than found in single crystal silicon.