Memory element using active layer of blended materials
The present memory device has first and second electrodes, a passive layer between the first and second electrodes and on and in contact with the first electrode, and an active layer between the first and second electrodes and on and in contact with the passive layer and second electrode, for receiving a charged specie from the passive layer. The active layer is a mixture of (i) a first polymer, and (ii) a second polymer for enhancing ion transport, improving the interface and promoting a rapid and substantially uniform distribution of the charged specie in the active layer, i.e., preventing a localized injection of the charged species. These features result in a memory element with improved stability, a more controllable ON-state resistance, improved switching speed and a lower programming voltage.
1. A memory device comprising:
first and second electrodes;
a passive layer between the first and second electrodes; and
an active layer between the first and second electrodes for receiving a charged specie from the passive layer, the active layer comprising a material for promoting substantially uniform distribution of the charged specie in the active layer.
2. The memory device of claim 1 wherein the active layer comprises (i) a first material, and (ii) a second material, the second material promoting substantially uniform distribution of the charged specie in the active layer.
3. The memory device of claim 2 wherein the active layer comprises a mixture of the first and second materials.
4. The memory device of claim 3 wherein the second material comprises a polymer.
5. The memory device of claim 4 wherein the first material comprises a polymer.
6. The memory device of claim 4 wherein the second material comprises at least one material selected from the group consisting of poly(ethyleneoxide), poly(methylmethacrylate), poly(ethyleneglycol), poly(caprolactone) and poly(propyleneoxide).
7. The memory device of claim 6 wherein the first material comprises poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-alt-5,5′-(2,2′bithiophene) (F8T2).
8. A memory device comprising:
first and second electrodes;
a passive layer between the first and second electrodes and on and in contact with the first electrode; and
an active layer between the first and second electrodes and on and in contact with the passive layer and second electrode, for receiving a charged specie from the passive layer, the active layer comprising a mixture of (i) a first polymer, and (ii) a second polymer for promoting substantially uniform distribution of the charged specie in the active layer.
9. The memory device of claim 8 wherein the second polymer comprises at least one material selected from the group consisting of poly(ethyleneoxide), poly(methylmethacrylate), poly(ethyleneglycol), poly(caprolactone) and poly(propyleneoxide).
10. The memory device of claim 9 wherein the first polymer comprises poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-alt-5,5′-(2,2′bithiophene) (F8T2).