Low leakage MIM capacitor
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxide buffer layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxide buffer layer acts to improve capacitance and reduce capacitor leakage. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.
1. A capacitor, comprising:
a first electrode;
a second electrode;
a single compound, dielectric layer interposed between the first electrode and the second electrode;
a metal oxide buffer layer intermediate and directly adjoining the dielectric layer and one of the first and second electrodes; and
wherein the one electrode is a tungsten nitride and the buffer layer is a tungsten oxide.
2. The capacitor according to claim 1 , wherein the dielectric layer is a tantalum oxide.
3. The capacitor of claim 1 , wherein the dielectric layer comprises a single layer.
4. A vertical capacitor, comprising:
a bottom electrode;
a top electrode positioned above the bottom electrode;
a single compound, dielectric layer interposed between the top electrode and the bottom electrode; and
a metal oxide buffer layer intermediate and directly adjoining the dielectric layer and the bottom electrode, wherein the bottom electrode is a tungsten nitride and the buffer layer is a tungsten oxide.
5. The capacitor according to claim 4 , wherein the dielectric layer is a tantalum oxide.
6. A capacitor, comprising:
a bottom electrode;
a top electrode;
a single compound, dielectric layer interposed between the bottom electrode and the top electrode; and
at least one tungsten oxide buffer layer, wherein each tungsten oxide buffer layer is interposed between and directly adjoining the dielectric layer and an electrode selected from the group consisting of the bottom electrode and the top electrode;
wherein at least one electrode selected from the group consisting of the bottom electrode and the top electrode comprises tungsten nitride.
7. The capacitor according to claim 6 , wherein the dielectric layer is a metal oxide of a different type than the buffer layer.
8. A capacitor, comprising:
a first electrode;
a second electrode;
a single compound, tantalum oxide dielectric layer interposed between the bottom electrode and the top electrode; and
at least one tungsten oxide buffer layer, wherein each tungsten oxide buffer layer is interposed between and directly adjoining the dielectric layer and an electrode selected from the group consisting of the bottom electrode and the top electrode;
wherein at least one electrode is selected from the group consisting of the bottom electrode and the top electrode includes tungsten nitride.
9. A semiconductor die, comprising:
an integrated circuit supported by a substrate and having a plurality of integrated circuit devices, wherein at least one of the plurality of integrated circuit devices comprises a capacitor, the capacitor comprising:
a first electrode;
a second electrode;
a single compound, metal oxide dielectric layer interposed between the first electrode and the second electrode; and
at least one tungsten oxide buffer layer, wherein each tungsten oxide buffer layer is interposed between and directly adjoining the dielectric layer and an electrode selected from the group consisting of the first electrode and the second electrode;
wherein at least one electrode selected from the group consisting of the first electrode and the second electrode comprises tungsten nitride.
10. A semiconductor die, comprising:
an integrated circuit supported by a substrate and having a plurality of integrated circuit devices, wherein at least one of the plurality of integrated circuit devices comprises a capacitor, the capacitor comprising:
a first electrode;
a tungsten nitride second electrode;
a single compound, metal oxide dielectric layer interposed between the first electrode and the second electrode; and
a tungsten oxide buffer layer is interposed between and directly adjoining the dielectric layer and the second electrode.
11. A semiconductor die, comprising:
an integrated circuit supported by a substrate and having a plurality of integrated circuit devices, wherein at least one of the plurality of integrated circuit devices comprises a capacitor, the capacitor comprising:
a first electrode;
a tungsten nitride second electrode;
a single compound, metal oxide dielectric layer interposed between the first electrode and the second electrode; and
a high temperature annealed, tungsten oxide buffer layer is interposed between and directly adjoining the dielectric layer and the second electrode.
12. The semiconductor die according to claim 11 , wherein the high temperature annealed buffer layer is annealed at least 700 degrees Celsius and has an orthorhomic crystal structure.
13. A memory device, comprising:
an array of memory cells, wherein at least one memory cell has a capacitor, the capacitor comprising:
a first electrode;
a second electrode;
a single compound, metal oxide dielectric layer interposed between the first electrode and the second electrode; and
at least one tungsten oxide buffer layer, wherein each tungsten oxide buffer layer is interposed between and directly adjoining the dielectric layer and an electrode selected from the group consisting of the first electrode and the second electrode, wherein at least one electrode selected from the group consisting of the bottom electrode of the capacitor and the top electrode of the capacitor comprises tungsten nitride;
a row access circuit coupled to the array of memory cells;
a column access circuit coupled to the array of memory cells; and
an address decoder circuit coupled to the row access circuit and the column access circuit.
14. A memory cell comprising a capacitor and an access device, wherein the capacitor includes:
a first electrode;
a second electrode;
a single compound, dielectric layer interposed between the first electrode and the second electrode;
a metal oxide buffer layer intermediate and directly adjoining the dielectric layer and one of the first and second electrodes; and
wherein the one electrode is a tungsten nitride and the buffer layer is a tungsten oxide.
15. A processor and a memory cell electrically connected to said processor, wherein said memory cell includes a capacitor comprising:
a first electrode;
a second electrode;
a single compound, dielectric layer interposed between the first electrode and the second electrode;
a metal oxide buffer layer intermediate and directly adjoining the dielectric layer and one of the first and second electrodes; and
wherein the one electrode is a tungsten nitride and the buffer layer is a tungsten oxide.
16. A semiconductor die, comprising:
an integrated circuit supported by a substrate and having a plurality of integrated circuit devices, wherein at least one of the plurality of integrated circuit devices comprises a capacitor, the capacitor comprising:
a first electrode;
a second electrode;
a single compound, dielectric layer interposed between the first electrode and the second electrode;
a metal oxide buffer layer is interposed between and directly adjoining the dielectric layer and the second electrode, wherein the buffer layer has an orthorhombic crystal lattice structure, and wherein the metal oxide buffer layer includes tungsten; and
wherein the electrode selected from the group consisting of the first electrode and the second electrode has a metal component that is the same as the metal component of the buffer layer.
17. A semiconductor die, comprising:
an integrated circuit supported by a substrate and having a plurality of integrated circuit devices, wherein at least one of the plurality of integrated circuit devices comprises a capacitor, the capacitor comprising:
a first electrode;
a second electrode;
a single compound, dielectric layer interposed between the first electrode and the second electrode;
a metal oxide buffer layer is interposed between and directly adjoining the dielectric layer and the second electrode, wherein the buffer layer has an orthorhombic crystal lattice structure, and wherein the metal oxide buffer layer includes tungsten; and
wherein the electrode selected from the group consisting of the first electrode and the second electrode has a metal component that is the same as the metal component of the buffer layer; wherein the second electrode includes tungsten nitride.