Method and device for plasma-etching organic material film
View Patent ↗A support electrode ( 2 ) and a counter electrode ( 16 ) constituting parallel plate electrodes are disposed in a process vessel ( 1 ). A substrate (W) with an organic material film formed thereon is supported by the support electrode ( 2 ). A high-frequency power of a frequency of 40 MHz or above for generating the plasma is applied to the support electrode ( 2 ), so that a high-frequency electric field is formed between the support electrode ( 2 ) and the counter electrode ( 16 ). A process gas is supplied into the process vessel ( 1 ) to generate plasma of the process gas by the high-frequency electric field. The organic material film on the substrate (W) is etched with the plasma, with an organic material film serving as a mask. The process gas includes an ionization accelerating gas, such as Ar, that is ionized from a ground state or metastable state with an ionization energy of 10 eV or below and has a maximum ionization cross-section of 2×10 16 cm 2 or above.
1. A method of plasma-etching an organic material film formed on a surface of a substrate with an inorganic material film used as a mask, by means of a parallel plate type plasma-etching apparatus; wherein
the organic material film is plasma-etched with:
a high-frequency power of a frequency of 40 MHz or above for generating plasma; and
a process gas including an ionization accelerating mono-atomic gas that is ionized from a ground state or metastable state with an ionization energy of 10 eV or below and has a maximum ionization cross-section of 2×10 −16 cm 2 or above, and a poly-atomic molecular gas, a flow-rate ratio of the ionization accelerating mono-atomic gas relative to the poly-atomic molecular gas in the process gas being 0.5 or above.
2. The method according to claim 1 , wherein
a plasma-etching apparatus is used, the apparatus including: a process vessel into which the process gas is supplied; and parallel plate electrodes disposed in the process vessel, the electrodes being constituted by a support electrode on which the substrate is supported, and a counter electrode that is opposed to the support electrode; and
the high-frequency power for generating the plasma is applied to the support electrode.
3. The method according to claim 2 , wherein
a high-frequency power of a frequency of 500 kHz to 27 MHz for drawing ions is further applied to the support electrode, such that an absolute value of the self-bias voltage of the support electrode is 500 V or below.
4. The method according to claim 1 , wherein
a plasma-etching apparatus is used, the apparatus including: a process vessel into which the process gas is supplied; and parallel plate electrodes disposed in the process vessel, the electrodes being constituted by a support electrode on which the substrate is supported, and a counter electrode that is opposed to the support electrode; and
the high-frequency power for generating the plasma is applied to the counter electrode; and
a high-frequency power of a frequency of 500 kHz to 27 MHz for drawing ions is applied to the support electrode, such that an absolute value of the self-bias voltage of the support electrode is 500 V or below.
5. The method according to claim 3 , wherein
the process gas includes Ar as the ionization accelerating gas, and N 2 and H 2 as the molecular gas.
6. The method according to claim 3 , wherein
the process gas includes Ar as the ionization accelerating gas and NH 3 as the molecular gas.
7. The method according to claim 3 , wherein
a frequency of the high-frequency power for generating the plasma is 100 MHz.
8. The method according to claim 3 , wherein
a distance between the support electrode and the counter electrode in the parallel plate electrodes is 40 mm or below.
9. A method of plasma-etching an organic material film formed on a surface of a substrate with an inorganic material film used as a mask, by means of a parallel plate type plasma-etching apparatus; wherein the organic material film is plasma-etched with:
a high-frequency power of a frequency of 40 MHz to 150 MHz for generating plasma; and
a process gas including an ionization accelerating mono-atomic gas that is ionized from a ground state or metastable state with an ionization energy of 10 eV or below and has a maximum ionization cross-section of 2×10 −16 cm 2 or above, and a poly-atomic molecular gas, a flow-rate ratio of the ionization acceleration mono-atomic gas relative to the molecular poly-atomic gas in the process gas being 0.5 or above.
10. The method according to claim 1 , wherein the process gas includes Ar, N 2 , and H 2 , a flow-rate ratio of Ar relative to N 2 and H 2 in the process gas being 5/9 or above.
11. The method according to claim 1 , wherein the process gas includes Ar and NH 3 , a flow-rate ratio of Ar relative to NH 3 in the process gas being 1.0/1.0 or above.