IP Library Granted Patent US 7,432,116
Granted Patent B2
US 7,432,116 · App. 10/081,971 · Granted Oct 7, 2008

Method and apparatus for film deposition

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 7,432,116
App. No.
10/081,971
Granted
Oct 7, 2008
Kind
B2
Abstract

Provided is a method and apparatus for depositing an organic compound layer having a plurality of function regions. A plurality of evaporation sources are provided within a deposition chamber. Function regions of respective organic compounds can be continuously formed and a mixed region be formed in an interface between the function regions. Meanwhile, a light source is provided in a deposition chamber to perform deposition while irradiating light to an anode surface, thereby forming a compact organic compound layer.

Claims (33)

1. A method of depositing a layer in a deposition apparatus,

the deposition apparatus comprising:

a load chamber;

an alignment chamber;

a first deposition chamber for forming an organic compound layer on a first electrode, prepared with a first and a second evaporation sources and a light source;

a cleaning preliminary chamber;

a second deposition chamber for forming a second electrode; and

a sealing chamber,

wherein the first evaporation source comprises a first organic compound; and

wherein the second evaporation source comprises a second organic compound;

the method comprising:

forming a first function region comprising the first organic compound evaporated from the first evaporation source over the first electrode in the first deposition chamber during irradiation with light from the light source;

forming a mixed region comprising the first organic compound evaporated from the first evaporation source and the second organic compound evaporated from the second evaporation source on the first function region in the first deposition chamber during irradiation with light from the light source;

forming a second function region comprising the second organic compound evaporated from the second evaporation source but not from the first evaporation source on the mixed region in the first deposition chamber during irradiation with light from the light source.

2. A method of depositing a layer in a deposition apparatus,

the deposition apparatus comprising:

a load chamber;

an alignment chamber;

a first deposition chamber for forming an organic compound layer on a first electrode, prepared with a first and a second evaporation sources and a light source;

a cleaning preliminary chamber;

a second deposition chamber for forming a second electrode; and

a sealing chamber,

wherein the first evaporation source comprises a first organic compound; and

wherein a second evaporation source comprises a second organic compound;

the method comprising:

forming a first function region comprising the first organic compound evaporated from the first evaporation source over the first electrode in the first deposition chamber;

forming a mixed region comprising the first organic compound evaporated from the first evaporation source and the second organic compound evaporated from the second evaporation source on the first function region in the first deposition chamber during irradiation with light from the light source; and

forming a second function region comprising the second organic compound evaporated from the second evaporation source but not from the first evaporation source on the mixed region in the first deposition chamber,

wherein the mixed region includes organic compound molecules; and

wherein the light is irradiated to the mixed region so as to activate the organic compound molecules and promote for compact film formation.

3. A method of depositing a layer according to claim 2 , wherein a light irradiated from the light source is an ultraviolet ray.

4. A method of depositing a layer according to claim 2 , wherein the light source is a low-pressure mercury lamp.

5. A method of depositing a layer according to claim 2 , wherein a light irradiated from the light source has a wavelength of 100 nm to 300 nm.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 20, 2002
From: YAMAZAKI, SHUNPEI; SEO, SATOSHI; SHIBATA, NORIKO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 012643/0890 →
Priority Claims (1)
JP 2001-044650 · Feb 21, 2001 · national
Continuity (1)
Related Publication 20020155632A1 · Oct 24, 2002