Memory device with chemical vapor deposition of titanium for titanium silicide contacts
A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second precursor with the seed layer by CVD. The titanium layer is used to form contacts to active areas of substrate and for the formation of interlevel vias.
1. A memory device, comprising:
a memory array, including a control circuit and an I/O circuit operatively coupled to the memory array; and
wherein at least one of the memory array, control circuit and I/O circuit further comprises:
a layer of a titanium alloy formed overlying walls of a contact hole, wherein the titanium alloy comprises titanium and an element selected from the group consisting of zinc, cadmium, mercury, aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic and antimony; and
a titanium silicide contact having a composition that is different from the layer of titanium alloy, the contact being directly coupled to the layer of titanium alloy
wherein the titanium alloy comprises titanium and zinc.
2. The memory of claim 1 , wherein the titanium has an atomic percentage of from 50% to 90% of the titanium alloy.
3. The memory of claim 1 , wherein the layer of titanium alloy is disposed to cover the entirety of the titanium silicide contact.
4. The memory of claim 3 , wherein the layer of titanium alloy overlying walls of the contact hole cover 100% of the contact sidewalls.