Method for fabricating semiconductor device using amorphous carbon layer as sacrificial hard mask

1. A method for fabricating a semiconductor device, comprising the steps of:

forming an amorphous carbon layer on an etch target layer;

forming a photoresist pattern on the amorphous carbon layer;

etching the amorphous carbon layer by using the photoresist pattern to form a sacrificial hard mask; and

etching the etch target layer by using the sacrificial hard mask to form a predetermined pattern;

wherein the photoresist pattern is formed by employing one of ArF photolithography and F 2 photolithography.

2. The method of claim 1 , wherein the predetermined pattern includes one of a positive pattern and a negative pattern.

3. The method of claim 1 , wherein if the etch target layer is an insulation layer, the predetermined pattern includes a contact hole pattern.

4. The method of claim 1 , wherein if the etch target layer is a conductive layer, the predetermined pattern includes one of a bit line, a word line and a metal line.

5. A method for fabricating a semiconductor device, comprising the steps of:

forming an amorphous carbon layer on an etch target layer;

forming a sacrificial hard mask layer on the amorphous carbon layer;

forming a photoresist pattern on the sacrificial hard mask layer;

etching the sacrificial hard mask layer by using the photoresist pattern to forming a first sacrificial hard mask;

etching the amorphous carbon layer by using the first sacrificial hard mask to form a second sacrificial hard mask; and

etching the etch target layer by using the second sacrificial hard mask to form a predetermined pattern;

wherein the photoresist pattern is formed by employing one of ArF photolithography and F 2 photolithopraphy.

6. The method of claim 5 , wherein the predetermined pattern includes one of a positive pattern and a negative pattern.

7. The method of claim 5 , wherein if the etch target layer is an insulation layer, the predetermined pattern includes a contact hole pattern.

8. The method of claim 5 , wherein if the etch target layer is a conductive layer, the predetermined pattern includes one of a bit line, a word line and a metal line.

9. The method of claim 5 , wherein the sacrificial hard mask layer includes a material selected from a group consisting of polysilicon, Al, W, WSi x , where x representing an atomic ratio ranging from approximately 1 to approximately 2, WN, Ti, TiN, TiSi x , where x representing an atomic ratio ranging from approximately 1 to approximately 2, TiAlN, TiSiN, Pt, Ir, IrO 2 , Ru, RuO 2 , Ag, Au, Co, TaN, CrN, CoN, MoN, MoSi x , where x representing an atomic ratio ranging from approximately 1 to approximately 2, Al 2 O 3 , AlN, PtSi x , where x representing an atomic ratio ranging from approximately 1 to approximately 2 and CrSi x , where x representing an atomic ratio ranging from approximately 1 to approximately 2.

10. A method for fabricating a semiconductor device, comprising the steps of:

forming an amorphous carbon layer on an etch target layer;

forming an anti-reflective coating layer on the amorphous carbon layer;

forming a photoresist pattern on the anti-reflective coating layer;

etching the anti-reflective coating layer by using the photoresist pattern;

etching the amorphous carbon layer by using the photoresist pattern to form a sacrificial hard mask; and

etching the etch target layer by using the sacrificial hard mask to form a predetermined pattern;

wherein the photoresist pattern is formed by employing one of ArF photolithography and F 2 photolithography.

11. The method of claim 10 , wherein the predetermined pattern includes one of a positive pattern and a negative pattern.

12. The method of claim 10 , wherein if the etch target layer is an insulation layer, the predetermined pattern includes a contact hole pattern.

13. The method of claim 10 , wherein if the etch target layer is a conductive layer, the predetermined pattern includes a bit line, a word line and a metal line.

14. The method of claim 10 , wherein the anti-reflective coating layer includes one of an organic material and an inorganic material.

15. A method for fabricating a semiconductor device, comprising the steps of:

forming an amorphous carbon layer on an etch target layer;

forming a sacrificial hard mask layer on the amorphous carbon layer;

forming an anti-reflective coating layer on the sacrificial hard mask layer;

forming a photoresist pattern on the anti-reflective coating layer;

etching the anti-reflective coating layer by using the photoresist pattern;

etching the sacrificial hard mask layer by using the photoresist pattern to form a first sacrificial hard mask;

etching the amorphous carbon layer by using the first sacrificial hard mask to form a second sacrificial hard mask; and

etching the etch target layer by using the second sacrificial hard mask to form a predetermined pattern;

wherein the photoresist pattern is formed by employing one of ArF photolithography and F 2 photolithography.

16. The method of claim 15 , wherein the predetermined pattern includes one of a positive pattern and a negative pattern.

17. The method of claim 15 , wherein if the etch target layer is an insulation layer and the predetermined pattern includes a contact hole pattern.

18. The method of claim 15 , wherein if the etch target layer is a conductive layer and the predetermined pattern includes a bit line, a word line and a metal line.

19. The method of claim 15 , wherein the anti-reflective coating layer includes one of an organic material and an inorganic material.

20. The method of claim 15 , wherein the sacrificial hard mask layer includes a material selected from a group consisting of polysilicon, Al, W, WSi x , where x representing an atomic ratio ranging from approximately 1 to approximately 2, WN, Ti, TiN, TiSi x , where x representing an atomic ratio ranging from approximately 1 to approximately 2, TiAlN, TiSiN, Pt, Ir, IrO 2 , Ru, RuO 2 , Ag, Au, Co, TaN, CrN, CoN, MoN, MoSi x , where x representing an atomic ratio ranging from approximately 1 to approximately 2, Al 2 O 3 , AlN, PtSi x , where x representing an atomic ratio ranging from approximately 1 to approximately 2 and CrSi x , where x representing an atomic ratio ranging from approximately 1 to approximately 2.

21. A method for fabricating a semiconductor device, comprising the steps of:

forming an insulation layer on an etch target layer;

forming an amorphous carbon layer on the insulation layer;

forming an anti-reflective coating layer on the amorphous carbon layer;

forming a photoresist pattern on the anti-reflective coating layer;

etching anti-reflective coating layer by using the photoresist pattern;

etching the amorphous carbon layer by using the photoresist pattern to form a sacrificial hard mask;

etching the insulation layer by using the sacrificial hard mask to form a hard mask; and

etching the etch target layer by using the sacrificial hard mask and the hard mask to form a predetermined pattern;

wherein the photoresist pattern is formed by employing one of ArF photolithography and F 2 photolithography.

22. A method for fabricating a semiconductor device, comprising the steps of:

forming an insulation layer on an etch target layer;

forming an amorphous carbon layer on the insulation layer;

forming a sacrificial hard mask layer on the amorphous carbon layer

forming an anti-reflective coating layer on the sacrificial hard mask layer;

forming a photoresist pattern on the anti-reflective coating layer;

etching anti-reflective coating layer by using the photoresist pattern;

etching the sacrificial hard mask layer by using the photoresist pattern to form a first sacrificial hard mask;

etching the amorphous carbon layer by using the first sacrificial hard mask to form a second sacrificial hard mask;

etching the insulation layer by using the second sacrificial hard mask to form a hard mask; and

etching the etch target layer by using the second sacrificial hard mask and the hard mask to form a predetermined pattern;

wherein the photoresist pattern is formed by employing one of ArF photolithography and F 2 photolithography.

23. The method of claim 22 , wherein the sacrificial hard mask layer includes a material selected from a group consisting of polysilicon, Al, W, WSi x , where x representing an atomic ratio ranging from approximately 1 to approximately 2, WN, Ti, TiN, TiSi x , where x representing an atomic ratio ranging from approximately 1 to approximately 2, TiAlN, TiSiN, Pt, Ir, IrO 2 , Ru, RuO 2 , Ag, Au, Co, TaN, CrN, CoN, MoN, MoSi x , where x representing an atomic ratio ranging from approximately 1 to approximately 2, Al 2 O 3 , AlN, PtSi x , where x representing an atomic ratio ranging from approximately 1 to approximately 2 and CrSi x , where x representing an atomic ratio ranging from approximately 1 to approximately 2.