Method of manufacturing silicide layer for semiconductor device
It is made possible to reduce the interface resistance at the interface between the nickel silicide film and the silicon. A semiconductor manufacturing method includes: forming an impurity region on a silicon substrate, with impurities being introduced into the impurity region; depositing a Ni layer so as to cover the impurity region; changing the surface of the impurity region into a NiSi 2 layer through annealing; forming a Ni layer on the NiSi 2 layer; and silicidating the NiSi 2 layer through annealing.
1. A method of manufacturing a semiconductor device, comprising:
forming an impurity region on a silicon substrate, with impurities being introduced into the impurity region;
depositing a Ni layer so as to cover the impurity region;
changing the surface of the impurity region into a NiSi 2 layer through annealing;
forming a Ni layer on the NiSi 2 layer; and
silicidating the NiSi 2 layer through annealing.
2. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein a film thickness of the Ni layer deposited on the NiSi 2 layer is smaller than a film thickness of the NiSi 2 layer.
3. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein the silicidation of the NiSi 2 layer includes forming a silicide laminated film including a NiSi 2 layer and a NiSi layer.
4. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein the silicidation of the NiSi 2 layer includes performing annealing at a temperature of 500° C. Or lower.
5. The method of manufacturing a semiconductor device as claimed in claim 4 , wherein the silicidation of the NiSi 2 layer includes performing annealing at a temperature of 400° C. Or lower.
6. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein the changing of the surface of the impurity region into a NiSi 2 layer comprising:
changing the surface of the impurity region into a Ni 2 Si layer through annealing;
changing the Ni 2 Si layer into a NiSi layer through annealing; and
changing the NiSi layer into a NiSi 2 layer through annealing.