Post passivation structure for a semiconductor device and packaging process for same
A post passivation rerouting support structure comprises a relatively thin support layer above the passivation layer to support the RDL, and a relatively thick support layer for fine pitch interconnects extending from the RDL and terminating as contact structures at the surface of the thick support layer, for a next level packaging structure. The thick support layer is planarized before defining the contact structures. The thick support layer may be formed after the conducting posts have been formed, or the thick support layer is formed before forming the conducting posts in vias formed in the thick support layer. An encapsulating layer may be provided above the thick support layer, which top surface is planarized before defining the contact structures. The encapsulating layer and the further support layer may be the same layer.
1. A method of forming a circuit component, comprising:
providing a wafer substrate, a MOS device on said wafer substrate, a contact pad over said wafer substrate, and a passivation layer over said wafer substrate, wherein a first opening in said passivation layer is over said contact pad, and said contact pad has a contact region at a bottom of said first opening;
forming a first metal layer over said passivation layer and over said contact region;
after said forming said first metal layer, forming a first photoresist layer on said first metal layer, wherein a second opening in said first photoresist layer is over said first metal layer;
after said forming said first photoresist layer, forming a second metal layer over said first metal layer under said second opening;
after said forming said second metal layer, removing said first photoresist layer;
after said forming said second metal layer, forming a second photoresist layer on said second metal layer, wherein a third opening in said second photoresist layer is over said second metal layer;
after said forming said second photoresist layer, forming a metal post over said second metal layer under said third opening;
after said forming said metal post, removing said second photoresist layer;
after said removing said first and second photoresist layers, removing said first metal layer not under said second metal layer;
after said removing said first metal layer not under said second metal layer, forming a first polymer layer over said passivation layer, on said second metal layer and on said metal post;
after said forming said first polymer layer, polishing said first polymer layer and uncovering an end of said metal post from said first polymer layer; and
after said polishing said first polymer layer and said uncovering said end from said first polymer layer, forming a wirebonded wire bonded over said end.
2. The method as in claim 1 , wherein said first metal layer comprises titanium.
3. The method as in claim 1 , wherein said first metal layer comprises copper.
4. The method as in claim 1 , wherein said forming said second metal layer comprises an electroplating process.
5. The method as in claim 1 , wherein said second metal layer comprises copper.
6. The method as in claim 1 , wherein said forming said metal post comprises an electroplating process.
7. The method as in claim 1 , wherein said forming said metal post comprises electroplating a copper layer on said second metal layer under said third opening.
8. The method as in claim 1 further comprising forming a second polymer layer on said passivation layer, wherein a fourth opening in said second polymer layer is over said contact region, followed by said forming said first metal layer further over said second polymer layer, followed by said forming said first polymer layer further on said second polymer layer.
9. The method as in claim 8 , wherein said second polymer layer comprises polyimide.
10. The method as in claim 8 , wherein said forming said second polymer layer comprises a curing process.
11. The method as in claim 1 , wherein said forming said metal post comprises forming a copper layer on said second metal layer under said third opening and forming a gold-containing layer over said copper layer in said third opening.
12. The method as in claim 1 , wherein said forming said metal post comprises forming a copper layer on said second metal layer under said third opening and forming a nickel-containing layer over said copper layer in said third opening.
13. The method as in claim 1 , wherein said forming said metal post comprises electroplating a copper layer on said second metal layer under said third opening and electroplating a third metal layer over said copper layer in said third opening.
14. The method as in claim 1 , wherein said metal post has a height between 25 and 200 micrometers.
15. The method as in claim 1 , wherein said wirebonded wire comprises gold.
16. A method of forming a circuit component, comprising:
providing a wafer substrate, a MOS device on said wafer substrate, multiple contact pads over said wafer substrate, and a passivation layer over said wafer substrate, wherein multiple first openings in said passivation layer are over said multiple contact pads, and said multiple contact pads have multiple contact regions at multiple bottoms of said multiple first openings;
forming a first metal layer over said passivation layer and over said multiple contact regions;
after said forming said first metal layer, forming a first photoresist layer on said first metal layer, wherein multiple second openings in said first photoresist layer are over said first metal layer;
after said forming said first photoresist layer, forming a second metal layer over said first metal layer under said multiple second openings;
after said forming said second metal layer, removing said first photoresist layer;
after said forming said second metal layer, forming a second photoresist layer on said second metal layer, wherein a third opening in said second photoresist layer is over said second metal layer, and a forth opening in said second photoresist is over said second metal layer;
after said forming said second photoresist layer, forming a first metal post over said second metal layer under said third opening and forming a second metal post over said second metal layer under said fourth opening;
after said forming said first and second metal said second photoresist layers;
after said removing said first and second photoresist layers, removing said first metal layer not under said second metal;
after said removing said first metal layer not under said second metal layer ,forming a first polymer layer over said passivation layer, on said second metal layer and on said first and second metal posts; and
after said forming said first polymer layer, polishing said first polymer layer and uncovering an end of said first metal post and an end of said second metal post from said first polymer layer, wherein a pitch between said first and second metal posts is less than 250 micrometers.
17. The method as in claim 16 , wherein said forming said first metal post comprises electroplating a copper layer on said second metal layer under said third opening.
18. The method as in claim 16 , wherein said forming said second metal layer comprises electroplating a copper layer on said first metal layer under said multiple second openings.
19. The method as in claim 16 further comprising forming a second polymer layer on said passivation layer, wherein multiple fifth openings in said second polymer layer are over said multiple contact regions, followed by said forming said first metal layer further over said second polymer layer, followed by said forming said first polymer layer further on said second polymer layer.
20. The method as in claim 16 , after said polishing said first polymer layer and said uncovering said end of said first metal post and said end of said second metal post from said first polymer layer, further comprising electroplating a solder over said end of said first metal post.
21. The method as in claim 16 , after said polishing said first polymer layer and said uncovering said end of said first metal post and said end of said second metal post from said first polymer layer, further comprising forming a titanium-containing layer over said end of said first metal post, and electroplating a solder over said titanium-containing layer and over said end of said first metal post.
22. The method as in claim 16 , wherein said first metal post has a height between 25 and 200 micrometers.
23. The method as in claim 16 , wherein said first metal layer comprises titanium.