Resist composition and patterning process
A resist composition comprising a fullerene having five phenol derivatives is provided.
1. A resist composition of a chemical amplified type comprising a fullerene having the general formula (1):
wherein R is hydrogen or an alkyl group of 1 to 4 carbon atoms, R 1 to R 5 each are hydrogen or an acid labile group, a, b, c, d, and e each are an integer of 0 to 2, and the sum of a+b+c+d+e is 1 to 10, an organic solvent, and a photoacid generator.
2. The resist composition of claim 1 which is of the chemically amplified positive type, further comprising a dissolution inhibitor.
3. The resist composition of claim 1 which is of the chemically amplified negative type, further comprising a crosslinking agent.
4. The resist composition of claim 1 , further comprising a basic compound or a surfactant or both.
5. A process for forming a pattern, comprising the steps of:
applying the resist composition of claim 1 onto a substrate to form a coating,
heat treating the coating and exposing the coating to high energy radiation,
optionally heat treating the exposed coating, and developing the coating with a developer.