Method for forming a lithography pattern

1. A method of lithography patterning, comprising:

forming a first material layer on a substrate, the first material layer being substantially free of silicon;

forming a patterned resist layer including at least one opening therein on the first material layer;

forming a second material layer on the patterned resist layer, the second material layer containing silicon, wherein forming the second material layer includes introducing a slurry having silicon oxide and diffusing the silicon oxide into the resist; and

opening the first material layer using the second material layer as a mask.

2. The method of claim 1 , wherein the diffusing of the silicon oxide includes a thermal treatment with a temperature ranging between about 50 C and 180 C.

3. A method of lithography patterning, comprising:

forming a first material layer on a substrate, the first material layer being substantially free at least one of carboxyl groups;

forming a patterned resist layer including at least one opening therein above the first material layer, the patterned resist layer containing carboxyl groups;

forming a second material layer on the patterned resist layer, the second material layer including of carboxyl groups;

reacting the carboxyl groups of the second material layer with the carboxyl groups of the patterned resist layer; and

etching the first material layer uncovered by the patterned resist layer while the patterned resist layer is protected from etching by the second material layer.

4. The method of claim 3 , further comprising:

removing un-reacted second material layer before the etching of the first material layer; and

etching the substrate using the first material layer as a hard mask.

5. The method of claim 3 , wherein the etching of the first material layer includes using a plasma etchant selected from the group consisting of oxygen plasma, nitrogen plasma, hydrogen, alkyl halide, and combination thereof.

6. The method of claim 3 , wherein the reacting of the carboxyl groups of the second material layer with the carboxyl groups of the patterned resist layer comprises providing a reaction temperature ranging between about 25 C and about 150 C.

7. The method of claim 3 , wherein the removing of un-reacted second material layer comprises rinsing the un-reacted second material layer with de-ionized.

8. The method of claim 3 , further comprising trimming the second material layer using an etching process.