Methods of forming semiconductor package
The invention includes semiconductor packages having grooves within a semiconductor die backside; and includes semiconductor packages utilizing carbon nanostructures (such as, for example, carbon nanotubes) as thermally conductive interface materials. The invention also includes methods of cooling a semiconductor die in which coolant is forced through grooves in a backside of the die, and includes methods of making semiconductor packages.
1. A method of forming a semiconductor package, comprising:
providing a semiconductor die, the die comprising a backside surface;
forming a plurality of grooves extending into the backside surface of the die;
providing a metallic seed material within the grooves;
growing carbon nanostructures on the seed material;
providing a heat sink across the plurality of grooves and over the carbon nanostructures;
wherein the carbon nanostructures are vertical columns extending upwardly within the grooves, the vertical columns having vertical lengths; and
forming thermally conductive material entirely along the vertical lengths of the vertical columns prior to providing the heat sink.
2. A method of forming a semiconductor package, comprising:
providing a semiconductor die, the die comprising a backside surface;
forming a plurality of grooves extending into the backside surface of the die;
providing a metallic seed material within the grooves;
growing carbon nanostructures on the seed material;
providing a heat sink across the plurality of grooves and over the carbon nanostructures;
wherein the carbon nanostructures are vertical columns extending upwardly within the grooves; and
prior to providing the heat sink:
coating at least some of the vertical columns with conductive material; and
forming dielectric material between at least some of the coated vertical columns.
3. A method of forming a semiconductor package, comprising:
providing a semiconductor die, the die comprising a backside surface;
forming a plurality of grooves extending into the backside surface of the die;
forming carbon nanostructures within the grooves, the carbon nanostructures being vertical columns extending upwardly within the grooves, the vertical columns having vertical lengths;
forming thermally conductive material entirely along the vertical lengths of the vertical columns; and
providing a heat sink across the plurality of grooves and over the carbon nanostructures.
4. A method of forming a semiconductor package, comprising:
providing a semiconductor die, the die comprising a backside surface and having a plurality of grooves extending into the backside surface of the die;
forming carbon nanostructures within the grooves, the carbon nanostructures being vertical columns extending upwardly within the grooves;
coating at least some of the vertical columns with conductive material;
forming dielectric material between at least some of the coated vertical columns; and
providing a heat sink across the plurality of grooves and over the carbon nanostructures.