Nitride semiconductor laser device
A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a p-side cladding layer, and a p-side contact layer laminated in turn. The device further includes a waveguide region of a stripe structure formed by etching from the p-side contact layer. The stripe width provided by etching is within the stripe range of 1 to 3 μm and the etching depth is below the thickness of the p-side cladding layer of 0.1 μm and above the active layer. Particularly, when a p-side optical waveguide layer includes a projection part of the stripe structure and a p-type nitride semiconductor layer on the projection part and the projection part of the p-side optical waveguide layer has a thickness of not more than 1 μm, an aspect ratio is improved in far field image. Moreover, the thickness of the p-side optical waveguide layer is greater than that of an n-side optical waveguide layer.
1. A nitride semiconductor laser device comprising:
an n-type semiconductor layer;
an active layer having a multi-quantum well (MQW) structure, including a plurality of well layers, each containing In, and a plurality of barrier layers, the active layer being provided on the n-type semiconductor layer; and
a p-type semiconductor layer provided on the active layer;
wherein the active layer comprises at least one three-layered structure, each said three-layered structure having one of the well layers, a middle layer having a band gap energy larger than that of one of the barrier layers, the middle layer being adjacent to said one of the well layers residing on the side of the p-type semiconductor layer, said one of the barrier layers being adjacent to the middle layer residing on the side of the p-type semiconductor layer.
2. The nitride semiconductor laser device according to claim 1 , wherein a thickness of the middle layer is smaller than that of the barrier layer.
3. The nitride semiconductor laser device according to claim 1 , wherein a thickness of the middle layer is within a range of one atomic layer to 100 angstroms.
4. The nitride semiconductor laser device according to claim 1 , wherein said middle layer is composed of Al u Ga 1-u N (0≦u≦1).
5. The nitride semiconductor laser device according to claim 1 , wherein said middle layer is composed of Al u Ga 1-u N (0.3≦u≦1).
6. The nitride semiconductor laser device according to claim 1 , wherein a stripe-shaped waveguide region is provided in the p-type semiconductor layer.
7. The nitride semiconductor laser device according to claim 1 , wherein an oscillation wavelength of the laser device is within a range of 450 nm to 520 nm.
8. The nitride semiconductor laser device according to claim 1 , wherein another one of the barrier layers is adjacent to the n-type semiconductor layer.