Method of forming silicon nitride film and method of manufacturing semiconductor device
A method of forming a silicon nitride film comprises: forming a silicon nitride film by applying first gas containing silicon and nitrogen and second gas containing nitrogen and hydrogen to catalyst heated in a reduced pressure atmosphere. A method of manufacturing a semiconductor device comprising the steps of: forming a silicon nitride film by the method as claimed in claim 1 on a substrate having the semiconductor layer, a gate insulation film selectively provided on a principal surface of the semiconductor layer, and a gate electrode provided on the gate insulation film; and removing the silicon nitride film on the semiconductor layer and the gate electrode and leaving a sidewall comprising the silicon nitride film on a side surface of the gate insulation film and the gate electrode by etching the silicon nitride film in a direction generally normal to the principal surface of the semiconductor layer. A method of manufacturing a semiconductor device comprising the steps of: forming a silicon nitride film by the method as claimed in claim 1 on a substrate including a semiconductor layer; forming an interlayer insulation layer on the silicon nitride film; forming a layer having an opening on the interlayer insulation layer; and etching the interlayer insulation layer via the opening in a condition where an etching rate for the silicon nitride film is greater than an etching rate for the interlayer insulation layer.
1. A method of forming a silicon nitride film comprising:
forming a silicon nitride film by applying a first gas, a second gas, and hydrogen (H 2 ) gas to a catalyst heated in a reduced pressure atmosphere, wherein
the first gas contains silicon and nitrogen, and
the second gas contains nitrogen and hydrogen.
2. The method of forming a silicon nitride film as claimed in claim 1 , wherein the first gas is decomposed by being applied to the catalyst to form deposition species in which silicon and nitrogen are bonded.
3. The method of forming a silicon nitride film as claimed in claim 1 , wherein the first gas is any one selected from the group consisting of trisilylamine, disilylamine, and (C x H y ) z SiX, where X is an amino group.
4. The method of forming a silicon nitride film as claimed in claim 1 , wherein the second gas is at least one of ammonia and methylamine.
5. The method of forming a silicon nitride film as claimed in claim 1 , wherein hydrogen is introduced into the reduced pressure atmosphere with the first gas and the second gas.
6. The method of forming a silicon nitride film as claimed in claim 1 , wherein the silicon nitride film is formed on a substrate having a surface on which a step or a groove is formed.
7. The method of forming a silicon nitride film as claimed in claim 1 , wherein the catalyst is an electrically heated metal body.
8. The method of forming a silicon nitride film as claimed in claim 1 , wherein the catalyst comprises at least one selected from the group consisting of tungsten (W), platinum (Pt), palladium (Pd), molybdenum (Mo), tantalum (Ta), titanium (Ti), vanadium (V), rhenium (Re), iridium (Ir), silicon (Si), and alumina (AlO x ).