Micro electro mechanical system, semiconductor device, and manufacturing method thereof
View Patent ↗The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.
1. A semiconductor device comprising:
an electric circuit;
a sensor electrically connected to the electric circuit and provided over the electric circuit;
a first spacer layer configured to form first interspace between the electric circuit and the sensor;
a substrate provided over the sensor; and
a second spacer layer configured to form second interspace between the substrate and the sensor,
wherein the second spacer layer is provided over the first spacer layer, and
wherein the second spacer layer overlaps with the first spacer layer.
2. A semiconductor device according to claim 1 , wherein the sensor is one of a piezoelectric element, a thermoelectric element, and a strain resistor element.
3. A semiconductor device according to claim 1 , wherein each of the first and second spacer layers has adhesiveness.
4. A semiconductor device according to claim 1 , wherein the electric circuit detects a signal from the sensor.
5. An electronic device comprising the semiconductor device according to claim 1 .
6. A semiconductor device comprising:
an electric circuit;
a sensor electrically connected to the electric circuit and provided over the electric circuit;
a first spacer layer configured to form first interspace between the electric circuit and the sensor;
a substrate provided over the sensor; and
a second spacer layer configured to form second interspace between the substrate and the sensor,
wherein the second spacer layer is provided over the first spacer layer,
wherein the second spacer layer overlaps with the first spacer layer, and
wherein each of the first and second interspace is filled with a rare gas or an inert gas.
7. A semiconductor device according to claim 6 , wherein the sensor is one of a piezoelectric element, a thermoelectric element, and a strain resistor element.
8. A semiconductor device according to claim 6 , wherein each of the first and second spacer layers has adhesiveness.
9. A semiconductor device according to claim 6 , wherein the electric circuit detects a signal from the sensor.
10. An electronic device comprising the semiconductor device according to claim 6 .
11. A semiconductor device comprising:
an electric circuit;
a sensor comprising a first electrode and a second electrode electrically connected to the electric circuit and provided over the electric circuit;
a first spacer layer configured to form first interspace between the electric circuit and the sensor;
a substrate provided over the sensor; and
a second spacer layer configured to form second interspace between the substrate and the sensor,
wherein a part of the first and second electrode contacts with both of the first and second spacer layer.
12. A semiconductor device according to claim 11 , wherein the sensor is one of a piezoelectric element, a thermoelectric element, and a strain resistor element.
13. A semiconductor device according to claim 11 , wherein each of the first and second spacer layers has adhesiveness.
14. A semiconductor device according to claim 11 , wherein the electric circuit detects a signal from the sensor.
15. An electronic device comprising the semiconductor device according to claim 11 .
16. A semiconductor device comprising:
an electric circuit;
a sensor comprising a first electrode and a second electrode electrically connected to the electric circuit and provided over the electric circuit;
a first spacer layer provided to form first interspace between the electric circuit and the sensor;
a substrate configured over the sensor; and
a second spacer layer configured to form second interspace between the substrate and the sensor,
wherein a part of the first and second electrode contacts with both of the first and second spacer layer, and
wherein each of the first and second interspace is filled with a rare gas or an inert gas.
17. A semiconductor device according to claim 16 , wherein the sensor is one of a piezoelectric element, a thermoelectric element, and a strain resistor element.
18. A semiconductor device according to claim 16 , wherein each of the first and second spacer layers has adhesiveness.
19. A semiconductor device according to claim 16 , wherein the electric circuit detects a signal from the sensor.
20. An electronic device comprising the semiconductor device according to claim 16 .
21. A semiconductor device according to claim 1 , wherein a top side of the first spacer layer contacts with a bottom side of the second spacer layer.
22. A semiconductor device according to claim 6 , wherein a top side of the first spacer layer contacts with a bottom side of the second spacer layer.
23. A semiconductor device according to claim 11 , wherein a top side of the first spacer layer contacts with a bottom side of the second spacer layer.
24. A semiconductor device according to claim 16 , wherein a top side of the first spacer layer contacts with a bottom side of the second spacer layer.
25. A semiconductor device according to claim 11 , wherein the second spacer layer is provided over the first spacer layer, and wherein the second spacer layer overlaps with the first spacer layer.
26. A semiconductor device according to claim 16 , wherein the second spacer layer is provided over the first spacer layer, and wherein the second spacer layer overlaps with the first spacer layer.