CMOS image sensor with backside illumination and method for manufacturing the same
A CMOS image sensor includes a plurality of pixel regions formed under a front surface of a substrate, and having photodiodes separated from each other by a field oxide, a multi-layered metal interconnection formed over the pixel regions of the front of the substrate, a bump connected to an uppermost metal interconnection of the multi-layered metal interconnection, a plurality of trenches formed in a backside of the substrate, wherein the trenches have different depths for each wavelength of light, and correspond to the respective pixel regions, and a glass covering the backside of the substrate.
1. A complementary metal oxide semiconductor (CMOS) image sensor, comprising:
a plurality of pixel regions formed under an upper surface of a substrate, and having photodiodes separated from each other by a field oxide;
a multi-layered metal interconnection formed over the pixel regions of the upper surface, of the substrate;
a bump connected to an uppermost metal interconnection of the multi-layered metal interconnection;
a plurality of trenches formed in a backside of the substrate, wherein the trenches have different depths for each wavelength of light, and correspond to the respective pixel regions; and
a glass covering the backside of the substrate.
2. The CMOS image sensor of claim 1 , wherein the trench corresponding to the pixel region having the longest wavelength has the smallest depth, and the trench corresponding to the pixel region having the shortest wavelength has the greatest depth.
3. The CMOS image sensor of claim 2 , wherein the pixel regions include a blue pixel receiving blue light with the shortest wavelength, a red pixel receiving red light with the longest wavelength, and a green pixel receiving green light with an intermediate wavelength.
4. The CMOS image sensor of claim 3 , wherein the trench corresponding to the red pixel has the smallest depth, the trench corresponding to the blue pixel has the greatest depth, and the trench corresponding to the green pixel has an intermediate depth between the depths of the trenches corresponding to the red and blue pixels.
5. The CMOS image sensor of claim 4 , wherein the trench corresponding to the blue pixel has a depth close to the photodiode of the blue pixel.
6. The CMOS image sensor of claim 5 , wherein a separation distance between the photodiode of the blue pixel and a bottom surface of the trench corresponding to the blue pixel is approximately 10 μm.
7. The CMOS image sensor of claim 1 , wherein a thickness of the substrate is in the range of approximately 70 μm to approximately 200 μm.
8. The CMOS image sensor of claim 1 , wherein a portion of metal interconnections configured as the multi-layered metal interconnection is formed over the photodiode of the pixel region.