Transistor gate forming methods and integrated circuits
A transistor gate forming method includes forming a first and a second transistor gate. Each of the two gates includes a lower metal layer and an upper metal layer. The lower metal layer of the first gate originates from an as-deposited material exhibiting a work function the same as exhibited in an as-deposited material from which the lower metal layer of the second gate originates. However, the first gate's lower metal layer exhibits a modified work function different from a work function exhibited by the second gate's lower metal layer. The first gate's lower metal layer may contain less oxygen and/or carbon in comparison to the second gate's lower metal layer. The first gate's lower metal layer may contain more nitrogen in comparison to the second gate's lower metal layer. The first gate may be a n-channel gate and the second gate may be a p-channel gate.
1. A transistor gate forming method comprising forming a first and a second transistor gate, each of the two gates including a lower metal layer and an upper metal layer, the lower metal layer of the first gate originating from an as-deposited material exhibiting a work function the same as exhibited in an as-deposited material from which the lower metal layer of the second gate originates, but the lower metal layer of the first gate exhibiting a work function that is modified from its as-deposited state to differ from a work function exhibited by the lower metal layer of the second gate.
2. The method of claim 1 wherein the lower metal layers comprise a first metal and the upper metal layers comprise a second metal different from the first metal.
3. The method of claim 1 wherein the lower metal layers comprise the same one or more material selected from the group consisting of titanium, tantalum, tungsten, titanium nitride, tantalum nitride, tungsten nitride, aluminum nitride, titanium silicide, tantalum silicide, tungsten silicide, and tantalum silicon nitride.
4. The method of claim 1 wherein the lower metal layers comprise tantalum nitride and the upper metal layers comprise titanium nitride.
5. The method of claim 1 wherein the material from which the lower metal layer of the first gate originates is deposited simultaneously with the material from which the lower metal layer of the second gate originates.
6. The method of claim 1 wherein the upper metal layers originate from a simultaneously deposited material that is different from the material from which the lower metal layers originate.
7. The method of claim 1 wherein the first gate exhibits properties suitable for use with a n-channel.
8. The method of claim 1 wherein the second gate exhibits properties suitable for use with a p-channel.
9. The method of claim 1 wherein modifying the work function comprises altering composition of the as-deposited material from which the lower metal layer of the first gate originates.
10. The method of claim 9 wherein altering composition comprises reducing oxygen and/or carbon content.
11. The method of claim 9 wherein altering composition comprises increasing nitrogen content.
12. The method of claim 1 wherein modifying the work function comprises plasma treatment.
13. The method of claim 1 wherein modifying the work function comprises reducing the work function.
14. The method of claim 1 wherein the upper metal layers are formed on and in physical contact with the lower metal layers.
15. The method of claim 1 comprising forming the transistor gates in a memory device.
16. A transistor gate forming method comprising forming a first transistor gate suitable for use with a n-channel and a second transistor gate suitable for use with a p-channel, each of the two gates including an upper metal layer containing titanium nitride formed on and in physical contact with a lower metal layer containing tantalum nitride, the lower metal layer of the first gate originating from an as-deposited tantalum nitride material exhibiting a work function the same as exhibited in an as-deposited tantalum nitride material from which the lower metal layer of the second gate originates, but the lower metal layer of the first gate exhibiting a work function and oxygen and carbon content that are reduced from their as-deposited state by plasma treatment to differ from a work function and oxygen and carbon content exhibited by the lower metal layer of the second gate.
17. A transistor gate forming method comprising:
forming a lower metal layer exhibiting a work function;
modifying the work function of a first portion of the lower metal layer without modifying the work function of a second portion of the lower metal layer;
forming an upper metal layer over the first and second portions of the lower metal layer;
forming a first transistor gate including material from the upper metal layer and material from the first portion of the lower metal layer; and
forming a second transistor gate including material from the upper metal layer and material from the second portion of the lower metal layer.
18. A transistor gate forming method comprising:
forming a lower metal layer containing tantalum nitride and exhibiting a work function;
reducing the work function of a first portion of the lower metal layer without modifying the work function of a second portion of the lower metal layer by masking the second portion, plasma treating the first portion, and reducing oxygen and carbon content of the first portion;
forming an upper metal layer containing titanium nitride on and in physical contact with the first and second portions of the lower metal layer;
forming a first transistor gate including material from the upper metal layer and material from the first portion of the lower metal layer; and
forming a second transistor gate including material from the upper metal layer and material from the second portion of the lower metal layer.
19. The method of claim 16 wherein the material from which the lower metal layer of the first gate originates is deposited simultaneously with the material from which the lower metal layer of the second gate originates.
20. The method of claim 16 further comprising increasing nitrogen content of the lower metal layer of the first gate.
21. The method of claim 17 wherein the lower metal layer comprises a first metal and the upper metal layer comprises a second metal different from the first metal.
22. The method of claim 17 wherein the lower metal layer and the upper metal layer comprise one or more material independently selected from the group consisting of titanium, tantalum, tungsten, titanium nitride, tantalum nitride, tungsten nitride, aluminum nitride, titanium silicide, tantalum silicide, tungsten silicide, and tantalum silicon nitride.
23. The method of claim 17 wherein the lower metal layer comprises tantalum nitride and the upper metal layer comprises titanium nitride.
24. The method of claim 17 wherein forming the lower metal layer comprises ALD and forming the upper metal layer comprises SFD.
25. The method of claim 17 wherein modifying the work function comprises altering composition of the first portion.
26. The method of claim 25 wherein altering composition comprises reducing oxygen and/or carbon content.
27. The method of claim 25 wherein altering composition comprises increasing nitrogen content.
28. The method of claim 17 wherein modifying the work function comprises masking the second portion and plasma treating the first portion.
29. The method of claim 17 wherein modifying the work function comprises reducing the work function.
30. The method of claim 17 wherein the upper metal layer is formed on and in physical contact with the lower metal layer.
31. The method of claim 17 comprising forming the transistor gates in a memory device.
32. The method of claim 18 wherein forming the lower metal layer comprises ALD and forming the upper metal layer comprises SFD.
33. The method of claim 18 further comprising increasing nitrogen content of the first portion.