Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography
A method of generating a mask of use in printing a target pattern on a substrate. The method includes the steps of (a) determining a maximum width of features to be imaged on the substrate utilizing phase-structures formed in the mask; (b) identifying all features contained in the target pattern having a width which is equal to or less than the maximum width; (c) extracting all features having a width which is equal to or less than the maximum width from the target pattern; (d) forming phase-structures in the mask corresponding to all features identified in step (b); and (e) forming opaque structures in the mask for all features remaining in target pattern after performing step (c).
1. A method of forming a mask for optically transferring a target pattern to a substrate, said method comprising the steps of:
generating a mask pattern representing said target pattern to be imaged on said substrate;
identifying open areas in said mask pattern which do not contain any features of said target pattern to be imaged on said substrate;
modifying said mask pattern to contain a plurality of sub-resolution flare reduction features in said open areas, said plurality of sub-resolution flare reduction features comprising chromeless phase-shifting structures and partially reducing the amount of light passing through said open areas in said mask pattern; and forming the mask based on said modified mask pattern.
2. The method of claim 1 , wherein said plurality of sub-resolution flare reduction features are arranged so as to form a checkerboard pattern.
3. The method of claim 1 , wherein said plurality of sub-resolution flare reduction features are arranged so as to form a line-space pattern.
4. The method of claim 1 , wherein said sub-resolution flare reduction features occupy 25% of the total area of the open area.
5. An apparatus for forming a mask pattern for optically transferring a target pattern to a substrate, said method comprising the steps of:
means for generating a mask pattern representing said target pattern to be imaged on said substrate;
means for identifying open areas in said mask pattern which do not contain any features of said target pattern to be imaged on said substrate; and
means for modifying said mask pattern to contain a plurality of sub-resolution flare reduction features in said open areas, said plurality of sub-resolution flare reduction features comprising chromeless phase-shifting structures and partially reducing the amount of light passing through said open areas in said mask pattern.
6. The apparatus of claim 5 , wherein said plurality of sub-resolution flare reduction features are arranged so as to form a checkerboard pattern.
7. The apparatus of claim 5 , wherein said plurality of sub-resolution flare reduction features are arranged so as to form a line-space pattern.
8. The apparatus of claim 5 , wherein said sub-resolution flare reduction features occupy 25% of the total area of the open area.
9. A computer readable medium for controlling a device for generating a mask for imaging a target pattern having a plurality of features, the process of generating said mask comprising the steps of:
generating a mask pattern representing said target pattern to be imaged on said substrate; identifying open areas in said mask pattern which do not contain any features of said target pattern to be imaged on said substrate; and
modifying said mask pattern to contain a plurality of sub-resolution flare reduction features in said open areas, said plurality of sub-resolution flare reduction features comprising chromeless phase-shifting structures and partially reducing the amount of light passing through said open areas in said mask pattern.
10. The computer readable medium of claim 9 , wherein said plurality of subresolution flare reduction features are arranged so as to form a checkerboard pattern.
11. The computer readable medium of claim 9 , wherein said plurality of subresolution flare reduction features are arranged so as to form a line-space pattern.
12. The computer readable medium of claim 9 , wherein said sub-resolution flare reduction features occupy 25% of the total area of the open area.
13. A device manufacturing method comprising the steps of:
(a) providing a substrate that is at least partially covered by a layer of radiation-sensitive material;
(b) providing a projection beam of radiation using an imaging system;
(c) generating a mask utilized to endow the projection beam with a pattern in its crosssection;
(d) projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material,
wherein, in step (c), said mask is formed by a method comprising the steps of:
generating a mask pattern representing said target pattern to be imaged on said substrate;
identifying open areas in said mask pattern which do not contain any features of said target pattern to be imaged on said substrate; and
modifying said mask pattern to contain a plurality of sub-resolution flare reduction features in said open areas, said plurality of sub-resolution flare reduction features comprising chromeless phase-shifting structures and partially reducing the amount of light passing through said open areas in said mask pattern.