Method of generating X-ray diffraction data for integral detection of twin defects in super-hetero-epitaxial materials
View Patent ↗A method provides X-ray diffraction data suitable for integral detection of a twin defect in a strained or lattice-matched epitaxial material made from components having crystal structures having symmetry belonging to different space groups. The material is mounted in an X-ray diffraction (XRD) system. In one embodiment, the XRD system's goniometer angle Ω is set equal to (θ B −β) where θ B is a Bragg angle for a designated crystal plane of the alloy that is disposed at a non-perpendicular orientation with respect to the {111) crystal plane, and β is the angle between the designated crystal plane and a {111} crystal plane of one of the epitaxial components. The XRD system's detector angle is set equal to (θ B +β). The material can be rotated through an angle of azimuthal rotation φ about the axis aligned with the material. Using the detector, the intensity of the X-ray diffraction is recorded at least at the angle at which the twin defect occurs.
1. A method of generating X-ray diffraction data suitable for twin defect detection in a lattice-matched or strained epitaxial material, said epitaxial material comprising a first component having a first crystal structure, said first component being lattice matched or strained to a second component having a second crystal structure, wherein said first crystal structure has either (i) a <111> orientation relative to said second crystal structure and a {111} crystal plane normal thereto, or (ii) a {111} crystal plane at an interface of said first crystal structure with said second crystal structure and a <111> vector normal thereto, said method comprising the steps of:
a) designating a crystal plane of said first component that is non-perpendicular to said {111} crystal plane and that produces diffraction when impinged by an X-ray beam;
b) calculating a Bragg angle θ B for said designated crystal plane;
c) mounting said epitaxial material in an X-ray diffraction (XRD) system having an X-ray source for generating an X-ray beam that can impinge on said epitaxial material at a goniometer angle Ω and thereby generate X-ray diffraction, a detector having a focused direction for detecting X-ray diffraction therealong at a detector angle measured with respect to the X-ray beam, and a sample holder with a reference orientation defined thereby, wherein, when said epitaxial material is positioned in said sample holder, said [111] vector makes an angle χ relative to said reference orientation and lying in the common plane defined by said X-ray beam and said direction of focus of said detector, said angle χ being equal to β, where β is the inter-planar angle between said {111} crystal plane said designated crystal plane;
d) setting said goniometer angle Ω equal to θ B ;
e) setting said detector angle equal to 2*θ B ; and
f) measuring the X-ray diffraction at at least one azimuthal angle φ of rotation about an axis aligned with said [111] vector, while the XRD system and said epitaxial material are in the position recited in steps c, d and e, said at least one azimuthal angle φ of rotation including at least one azimuthal angle φ of rotation at which X-ray diffraction of a twin defect occurs.
2. The method of claim 1 , wherein said epitaxial material is selected from the group consisting of (1) <111> cubic crystal layer on {0001} plane of trigonal (space symmetry) crystal material layer or substrate, (2) <0001> trigonal crystal layer on {111} plane of cubic crystal material layer or substrate, (3) <111> cubic crystal layer on {0001} plane of hexagonal (space symmetry) crystal material layer or substrate, and (4) <0001> trigonal crystal layer on {111} plane of hexagonal (space symmetry) crystal material layer or substrate.
3. The method of claim 1 , wherein said first component of said epitaxial material is a group IV alloy.
4. The method of claim 3 , wherein said first component is silicon germanium (SiGe).
5. The method of claim 1 , wherein said designated crystal plane is selected from the group consisting of {220}, {440}, {224}, {113}, {004}, {001}, {221}, {223}, {112}, {115}, {116} and {331} crystal planes.
6. The method of claim 5 , wherein said designated crystal plane is the {220} crystal plane.
7. The method of claim 1 , wherein said X-ray diffraction system is capable of rotating said epitaxial material about an axis aligned with said [111] vector, and wherein said measuring step further comprises continuously rotating said epitaxial material about said axis aligned with said [111] vector in order to provide an X-ray diffraction measurement at said at least one azimuthal angle φ of rotation.
8. The method of claim 7 , wherein said step of rotating comprises the step of rotating said epitaxial material through an azimuthal angle φ of rotation of at least 60°.
9. The method of claim 7 , wherein said step of rotating comprises the step of rotating said epitaxial material through an azimuthal angle φ of rotation of 360°.
10. The method of claim 1 , further comprising providing multiple detectors or X-ray sources and arranging the angles between the detectors and X-ray sources to have the same effect as physically rotating said epitaxial material, wherein said measuring step comprises taking at least one measurement through such detectors.
11. The method of claim 1 , wherein one of said components of said epitaxial material is a substrate that has a miscut or offcut angle associated therewith in the range of approximately ±10°, said method further comprising the step of adjusting said goniometer angle, said detector angle and said tilt angle based on said miscut or offcut angle.
12. The method of claim 1 further comprising checking alignment of the sample holder by recording X-ray diffraction measurements while varying φ and χ angles.
13. The method of claim 1 , further comprising estimating twin defect concentration by comparing measurements at two azimuthal angles of rotation φ 1 and φ 2 , φ 1 corresponding to a twin defect and φ 2 corresponding to majority crystal.
14. The method of claim 13 , wherein said comparison is effected by determining the ratio of intensity of said two measurements at φ 1 and φ 2 .
15. The method of claim 13 , wherein diffraction measurements are recorded while rotating said epitaxial material through diffraction peaks at φ 1 and φ 2 , and said comparison is effected by determining the ratio of peak area of the peak at φ 1 with the peak area of the peak at φ 2 .
16. A method of generating X-ray diffraction data suitable for twin defect detection in a lattice-matched or strained epitaxial material, said epitaxial material comprising a first component having a first crystal structure, said first component being lattice matched or strained to a second component having a second crystal structure, wherein said first crystal structure has either (i) a <111> orientation relative to said second crystal structure and a {111} crystal plane normal thereto, or (ii) a {111} crystal plane at an interface of said first crystal structure with said second crystal structure and a <111> vector normal thereto, said method comprising the steps of:
a) designating a crystal plane of said first component that is non-perpendicular to said {111} crystal plane and that produces diffraction when impinged by an X-ray beam;
b) calculating a Bragg angle θ B for said designated crystal plane;
c) mounting said epitaxial material in an X-ray diffraction (XRD) system having an X-ray source for generating an X-ray beam that can impinge on said epitaxial material at a goniometer angle Ω and thereby generate X-ray diffraction, a detector having a focused direction for detecting X-ray diffraction therealong at a detector angle measured with respect to the X-ray beam, and a sample holder with a reference orientation defined thereby, wherein, when said epitaxial material is positioned in said sample holder, said [111] vector is aligned with said reference orientation [and lying in the common plane defined by said X-ray beam and said direction of focus of said detector];
d) setting said goniometer angle Ω equal to θ B +β, where β is the inter-planar angle between said {111} crystal plane said designated crystal plane;
e) setting said detector angle equal to θ B −β; and
f) measuring the X-ray diffraction at at least one azimuthal angle φ of rotation about an axis aligned with said [111] vector, while the XRD system and said epitaxial material are in the position recited in steps c, d and e, said at least one azimuthal angle φ of rotation including at least one azimuthal angle φ of rotation at which X-ray diffraction of a twin defect occurs.
17. The method of claim 16 , wherein said epitaxial material is selected from the group consisting of (1) <111> cubic crystal layer on {0001} plane of trigonal (space symmetry) crystal material layer or substrate, (2) <0001> trigonal crystal layer on {111} plane of cubic crystal material layer or substrate, (3) <111> cubic crystal layer on {0001} plane of hexagonal (space symmetry) crystal material layer or substrate, and (4) <0001> trigonal crystal layer on {111} plane of hexagonal (space symmetry) crystal material layer or substrate.
18. The method of claim 16 , wherein said first component of said epitaxial material is a group IV alloy.
19. The method of claim 18 , wherein said first component is silicon germanium (SiGe).
20. The method of claim 16 , wherein said designated crystal plane is selected from the group consisting of {220}, {440}, {224}, {113}, {004}, {001}, {221}, {223}, {112}, {115}, {116} and {331} crystal planes.
21. The method of claim 20 , wherein said designated crystal plane is the {220} crystal plane.
22. The method of claim 16 , wherein said X-ray diffraction system is capable of rotating said epitaxial material about an axis aligned with said [111] vector, and wherein said measuring step further comprises continuously rotating said epitaxial material about said axis aligned with said [111] vector in order to provide an X-ray diffraction measurement at said at least one azimuthal angle φ of rotation.
23. The method of claim 22 , wherein said step of rotating comprises the step of rotating said epitaxial material through an azimuthal angle φ of rotation of at least 60°.
24. The method of claim 22 , wherein said step of rotating comprises the step of rotating said epitaxial material through an azimuthal angle φ of rotation of 360°.
25. The method of claim 16 , further comprising providing multiple detectors or X-ray sources and arranging the angles between the detectors and X-ray sources to have the same effect as physically rotating said epitaxial material, wherein said measuring step comprises taking at least one measurement through such detectors.
26. The method of claim 16 , wherein one of said components of said epitaxial material is a substrate that has a miscut or offcut angle associated therewith in the range of approximately ±10°, said method further comprising the step of adjusting said goniometer angle, said detector angle and said tilt angle based on said miscut or offcut angle.
27. The method of claim 16 further comprising checking alignment of the sample holder by recording X-ray diffraction measurements while varying φ and χ angles.
28. The method of claim 16 , further comprising estimating twin defect concentration by comparing measurements at two azimuthal angles of rotation φ 1 and φ 2 , φ 1 corresponding to a twin defect and φ 2 corresponding to majority crystal.
29. The method of claim 28 , wherein said comparison is effected by determining the ratio of intensity of said two measurements at φ 1 and φ 2 .
30. The method of claim 28 , wherein diffraction measurements are recorded while rotating said epitaxial material through diffraction peaks at φ 1 and φ 2 , and said comparison is effected by determining the ratio of peak area of the peak at φ 1 with the peak area of the peak at φ 2 .
31. A method of generating X-ray diffraction data suitable for twin defect detection in a lattice-matched or strained epitaxial material, said epitaxial material comprising a first component having a first crystal structure, said first component being lattice matched or strained to a second component having a second crystal structure, wherein said first crystal structure has either (i) a <111> orientation relative to said second crystal structure and a {111} crystal plane normal thereto, or (ii) a {111} crystal plane at an interface of said first crystal structure with said second crystal structure and a <111> vector normal thereto, said method comprising the steps of:
a) designating a crystal plane of said first component that is non-perpendicular to said {111} crystal plane and that produces diffraction when impinged by an X-ray beam;
b) calculating a Bragg angle θ B for said designated crystal plane;
c) mounting said epitaxial material in an X-ray diffraction (XRD) system having an X-ray source for generating an X-ray beam that can impinge on said epitaxial material at a goniometer angle Ω and thereby generate X-ray diffraction, a detector having a focused direction for detecting X-ray diffraction therealong at a detector angle measured with respect to the X-ray beam, and a sample holder with a reference orientation defined thereby, wherein, when said epitaxial material is positioned in said sample holder, said [111] vector is aligned with said reference orientation [and lying in the common plane defined by said X-ray beam and said direction of focus of said detector];
d) setting said goniometer angle Ω equal to θ B −β, where β is the inter-planar angle between said {111} crystal plane said designated crystal plane;
e) setting said detector angle equal to θ B +β; and
f) measuring the X-ray diffraction at at least one azimuthal angle φ of rotation about an axis aligned with said [111] vector, while the XRD system and said epitaxial material are in the position recited in steps c, d and e, said at least one azimuthal angle φ of rotation including at least one azimuthal angle φ of rotation at which X-ray diffraction of a twin defect occurs.
32. The method of claim 31 , wherein said epitaxial material is selected from the group consisting of (1) <111> cubic crystal layer on {0001} plane of trigonal (space symmetry) crystal material layer or substrate, (2) <0001> trigonal crystal layer on {111} plane of cubic crystal material layer or substrate, (3) <111> cubic crystal layer on {0001} plane of hexagonal (space symmetry) crystal material layer or substrate, and (4) <0001> trigonal crystal layer on {111} plane of hexagonal (space symmetry) crystal material layer or substrate.
33. The method of claim 31 , wherein said first component of said epitaxial material is a group IV alloy.
34. The method of claim 33 , wherein said first component is silicon germanium (SiGe).
35. The method of claim 31 , wherein said designated crystal plane is selected from the group consisting of {220}, {440}, {224}, {113}, {004}, {001}, {221}, {223}, {112}, {115}, {116} and {331} crystal planes.
36. The method of claim 35 , wherein said designated crystal plane is the {220} crystal plane.
37. The method of claim 31 , wherein said X-ray diffraction system is capable of rotating said epitaxial material about an axis aligned with said [111] vector, and wherein said measuring step further comprises continuously rotating said epitaxial material about said axis aligned with said [111] vector in order to provide an X-ray diffraction measurement at said at least one azimuthal angle φ of rotation.
38. The method of claim 37 , wherein said step of rotating comprises the step of rotating said epitaxial material through an azimuthal angle φ of rotation of at least 60°.
39. The method of claim 37 , wherein said step of rotating comprises the step of rotating said epitaxial material through an azimuthal angle φ of rotation of 360°.
40. The method of claim 31 , further comprising providing multiple detectors or X-ray sources and arranging the angles between the detectors and X-ray sources to have the same effect as physically rotating said epitaxial material, wherein said measuring step comprises taking at least one measurement through such detectors.
41. The method of claim 31 , wherein one of said components of said epitaxial material is a substrate that has a miscut or offcut angle associated therewith in the range of approximately ±10°, said method further comprising the step of adjusting said goniometer angle, said detector angle and said tilt angle based on said miscut or offcut angle.
42. The method of claim 31 further comprising checking alignment of the sample holder by recording X-ray diffraction measurements while varying φ and χ angles.
43. The method of claim 31 , further comprising estimating twin defect concentration by comparing measurements at two azimuthal angles of rotation φ 1 and φ 2 , φ 1 corresponding to a twin defect and φ 2 corresponding to majority crystal.
44. The method of claim 43 , wherein said comparison is effected by determining the ratio of intensity of said two measurements at φ 1 and φ 2 .
45. The method of claim 43 , wherein diffraction measurements are recorded while rotating said epitaxial material through diffraction peaks at φ 1 and φ 2 , and said comparison is effected by determining the ratio of peak area of the peak at φ 1 with the peak area of the peak at φ 2 .