Method for encapsulating sensor chips
A method for encapsulating sensor chips is disclosed. A protective layer is formed on an active surface of a sensor chip, and at least covers a sensor region in the active surface. The active surface of the sensor chip faces to a temporary carrier, so that the protective layer is attached to the temporary carrier. An encapsulant is formed on the temporary carrier to cover a back surface and side surfaces of the sensor chip. A plurality of electrically connecting components are formed in the encapsulant to electrically connect a plurality of bonding pads of the sensor chip, and then the protective layer is removed to expose the sensor region. The coverage of the protective layer is used to avoid pollution on the sensor region during encapsulating, thereby, especially in a wafer level packaging, making the package profile neat, tidy and smaller in size, and promoting production efficiency.
1. A method for encapsulating sensor chips, comprising steps of:
providing a sensor chip having an active surface, a back surface opposite to the active surface, and a plurality of side surfaces defined between the active surface and the back surface, wherein the active surface has a plurality of bonding pads formed thereon and includes a sensor region;
forming a protective layer on the active surface of the sensor chip, wherein the protective layer at least covers the sensor region;
attaching the sensor chip to a temporary carrier, wherein the active surface of the sensor chip faces to the temporary carrier, and is attached to the temporary carrier via the protective layer;
forming an encapsulant on the temporary carrier, wherein the encapsulant covers the back surface and the side surfaces of the sensor chip;
removing the temporary carrier; and
forming a plurality of electrically connecting components in the encapsulant, wherein the electrically connecting components are electrically connected to the bonding pads of the sensor chip.
2. The method of claim 1 , wherein the sensor chip is a CMOS image sensor chip.
3. The method of claim 1 , further comprising:
removing the protective layer to expose the sensor region.
4. The method of claim 3 , wherein the protective layer is a photosensitive dry film.
5. The method of claim 3 , further comprising:
forming a transparent passivation layer on the active surface of the sensor chip after the protective layer is removed, for protecting the sensor region and the electrically connecting components.
6. The method of claim 1 , wherein the encapsulant has a plurality of finger grooves provided for forming electrically conductive metal.
7. The method of claim 6 , wherein the step of forming the electrically conductive metal comprises an electroplating method.
8. The method of claim 1 , wherein the step of forming the electrically connecting components further comprises:
forming a plurality of through holes in the encapsulant; and
forming an electrically conductive metal in the through holes.
9. The method of claim 8 , wherein the step of forming the electrically conductive metal comprises an electroplating method.
10. The method of claim 1 , wherein the step of forming the electrically connecting components further comprises:
forming a plurality of trenches in the encapsulant, wherein the trenches are located above the active surface of the sensor chip and extend to the bonding pads of the sensor chip; and
forming an electrically conductive metal in the trenches.
11. The method of claim 10 , wherein the step of forming the electrically conductive metal comprises an electroplating method.
12. The method of claim 1 , wherein there is a chamfered corner formed on the periphery of the active surface of the sensor chip.
13. The method of claim 1 , wherein the chip sensor is monolithically formed in a wafer before the chip sensor is attached to the temporary carrier.
14. The method of claim 13 , further comprising:
performing a wafer-cutting step for separating the chip sensor individually.