Skived electrical contact for connecting an IC device to a circuit board and method of making a contact by skiving
The disclosed embodiments relate to the formation of an electrical contact using a skiving technique. The electrical contact includes a spring structure that has been skived away from an underlying metal body, but the spring remains coupled with the metal body which provides a base for the spring structure. The skived spring portion of the electrical contact may comprise a cantilever-like spring, a coil-like spring, or any other suitable type of spring. Such a spring contact may be used to form an electrical connection between an integrated circuit device and a circuit board (or other substrate). Other embodiments are described and claimed.
1. A contact for creating an electrical connection between a multi-layer substrate and an integrated circuit (IC) device, the contact comprising:
a metal body formed directly on the multi-layer substrate, the multi-layer substrate including at least one dielectric layer and at least one metal layer, the at least one metal layer including a number of conductors disposed on the at least one dielectric layer; and
a skived structure cut from the metal body and connected to a remaining portion of the metal body, the skived structure providing a spring and having an end for contacting a lead of the IC device, the remaining portion of the metal body secured to the multi-layer substrate and providing a base for the skived structure;
wherein the base is electrically coupled with at least one of the conductors of the multi-layer substrate.
2. The contact of claim 1 , wherein the spring comprises a cantilever-like spring.
3. The contact of claim 1 , further comprising a second skived structure cut from the metal body and connected to the remaining portion, the second skived structure providing a second spring and having an end for contacting the lead of the IC device.
4. The contact of claim 1 , wherein the metal body comprises a metal selected from a group consisting of copper, aluminum, brass, bronze, nickel, silver, and alloys thereof.
5. The contact of claim 1 , wherein the spring comprises a coil-like spring.
6. The contact of claim 5 , wherein the coil-like spring includes more than one turn.
7. An assembly comprising:
a multi-layer board, the multi-layer board having at least one dielectric layer and at least one metal layer, the at least one metal layer including a number of conductors disposed on the at least one dielectric layer;
a number of contacts disposed on the multi-layer board, each contact including a metal body formed directly on the multi-layer board and a skived structure cut from the metal body and connected to a remaining portion of the metal body, the skived structure providing a spring and having an end, the remaining portion of the metal body secured to the multi-layer board and providing a base for the skived structure, the base electrically coupled with at least one of the conductors of the multi-layer board; and
an integrated circuit (IC) device having a number of leads, each of the leads making an electrical connection with the end of one of the contacts on the multi-layer board.
8. The assembly of claim 7 , wherein the spring of each contact comprises a cantilever-like spring.
9. The assembly of claim 7 , wherein the spring of each contact comprises a coil-like spring.
10. The assembly of claim 7 , wherein the metal body comprises a metal selected from a group consisting of copper, aluminum, brass, bronze, nickel, silver, and alloys thereof.
11. The assembly of claim 7 , further comprising a retention mechanism to hold the IC device on the multi-layer board and compress the IC device leads against the contacts on the multi-layer board.
12. The assembly of claim 7 , wherein the IC device includes a processing system.
13. The assembly of claim 12 , further comprising a graphics display coupled with the multi-layer board.
14. The assembly of claim 13 , further comprising a housing, wherein the multi-layer board and IC device are disposed within the housing.