Semiconductor device with a protected active die region and method therefor
A semiconductor device includes a semiconductor die having a plurality of contact pad sites, a plurality of contact pads, an encapsulant barrier, and an encapsulant. A plurality of contact pads is in electrical contact with a predetermined corresponding different one of the contact pad sites. An encapsulant barrier is positioned at an outer perimeter of the semiconductor die. The encapsulant barrier has a height that is as high as or greater than a highest of the plurality of contact pads. The encapsulant barrier is in physical contact with a same surface of the semiconductor die as the contact pad sites. An encapsulant surrounds the semiconductor die and one side of the encapsulant barrier. The encapsulant is blocked from making physical contact with any of the plurality of contact pads by the encapsulant barrier when the device is encapsulated while being supported by a temporary base support layer.
1. A method of protecting a semiconductor die during encapsulation comprising:
providing a plurality of contact pad sites on a side of the semiconductor die;
forming a plurality of contact pads within the plurality of contact pad sites, each of the plurality of contact pads having a substantially same predetermined height and having a first end and a second end, the first end of each of the plurality of contact pads being in electrical contact with a predetermined corresponding different one of the plurality of contact pad sites;
providing an encapsulant barrier at a periphery of the plurality of contact pads, the encapsulant barrier having a first surface and a second surface, the encapsulant barrier being substantially the same predetermined height of the plurality of contact pads, the encapsulant barrier being in physical contact with a first surface of the semiconductor die;
providing a first layer having a first surface and a second surface, the first surface of the first layer being in direct physical contact with the second surface of the encapsulant barrier;
providing a second layer in direct physical contact with the first layer;
encapsulating the second surface of the semiconductor die and blocking an encapsulant from making physical contact with any of the plurality of contact pads by the encapsulant barrier; and
removing the first layer and the second layer from the semiconductor die after the encapsulant has cured.
2. The method of claim 1 further comprising:
providing at least one vent in the encapsulant barrier for releasing any expanding gases within air spaces separating the plurality of contact pads.
3. The method of claim 1 further comprising:
providing a circuit on the semiconductor die and using the encapsulant barrier as one of an electrical shield for the circuit to isolate electromagnetic interference, an antenna or an inductor.
4. The method of claim 1 further comprising:
providing a circuit on the semiconductor die; and
electrically coupling the circuit to the encapsulant barrier for using the encapsulant barrier to implement an electrical function in the circuit.
5. A method of protecting a semiconductor die during encapsulation comprising:
providing the semiconductor die with a first surface and a second surface that are opposite each other, the first surface having a plurality of contact pad sites;
providing a plurality of contact pads, each of the plurality of contact pads having a substantially same predetermined height and having a first end and a second end, the first end of each of the plurality of contact pads being in electrical contact with a respective one of the plurality of contact pad sites;
positioning an encapsulant barrier substantially only at a periphery of the plurality of contact pads, the encapsulant barrier having substantially the same predetermined height of the plurality of contact pads, the encapsulant barrier having a first surface and an opposing second surface, the first surface being in physical contact with the first surface of the semiconductor die;
providing a first layer having a first surface and a second surface, the first surface of the first layer being in direct physical contact with the second surface of the encapsulant barrier and the second end of each of the plurality of contact pads;
providing a second layer in direct physical contact with the first layer;
providing an encapsulant surrounding the second surface of the semiconductor die and being blocked from making physical contact with any of the plurality of contact pads by the encapsulant barrier; and
releasing the first layer and the second layer from the semiconductor die after curing of the encapsulant.
6. The method of claim 5 further comprising providing at least one vent in the encapsulant barrier for release of any expanding gases within air space separating the plurality of contact pads.
7. The method of claim 5 further comprising forming the encapsulant barrier with a same material as the plurality of contact pads.
8. The method of claim 5 further comprising forming the encapsulant barrier with a different material than the plurality of contact pads.
9. The method of claim 5 further comprising:
implementing a circuit on the semiconductor die, wherein the encapsulant barrier is either an electrical shield to isolate the circuit from electromagnetic interference or functions as an antenna or an inductor for the circuit.
10. The method of claim 5 further comprising electrically coupling the circuit to the encapsulant barrier.
11. The method of claim 5 further comprising:
implementing a circuit on the semiconductor die, the circuit being electrically coupled to the encapsulant barrier for using the encapsulant barrier to implement an electrical function in the circuit.
12. The method of claim 5 further comprising:
interposing a passivation layer between the plurality of contact pads and the first surface of the semiconductor die, wherein a portion of the encapsulant barrier is in physical contact with the passivation layer.
13. A method of protecting a semiconductor die during encapsulation comprising, comprising:
providing a plurality of contact pad sites on the semiconductor die;
providing a plurality of contact pads in electrical contact with a predetermined corresponding different respective one of the plurality of contact pad sites;
positioning an encapsulant barrier substantially only at an outer perimeter of the semiconductor die, the encapsulant barrier having a height that is substantially as large as a highest of the plurality of contact pads, the encapsulant barrier having a first surface and a second surface, the first surface being in physical contact with a same surface of the semiconductor die as the plurality of contact pad sites;
providing a removable first layer having a first surface and a second surface, the first surface of the removable first layer being in direct physical contact with the second surface of the encapsulant barrier;
providing a second removable second layer in direct physical contact with the removable first layer;
providing an encapsulant surrounding the semiconductor die but being blocked from making physical contact with any of the plurality of contact pads by the encapsulant barrier; and
removing the removable first layer and the removable second layer from the semiconductor die after curing of the encapsulant.
14. The method of claim 13 further comprising:
forming at least one vent in the encapsulant barrier for release of any expanding gases within an air space separating the plurality of contact pads.
15. The method of claim 13 further comprising:
implementing a circuit on the semiconductor die, wherein the encapsulant barrier is either an electrical shield to isolate the circuit from electromagnetic interference or functions as an antenna or an inductor for the circuit.
16. The method of claim 13 further comprising:
implementing a circuit implemented on the semiconductor die; and
electrically coupling the circuit to the encapsulant barrier for using the encapsulant barrier to implement an electrical function in the circuit.