Method of fabricating trench isolation of semiconductor device
In a method of fabricating a trench isolation structure of a semiconductor device, excellent gap filling properties are attained, without the generation of defects. In one aspect, the method comprises: loading a substrate with a trench formed therein into a high-density plasma (HDP) chemical vapor deposition apparatus; primarily heating the substrate; applying a first bias power to the apparatus so as to form an HDP oxide liner on side wall and bottom surfaces of the trench, a gap remaining in the trench following formation of the HDP oxide liner; removing the application of the first bias power and secondarily heating the substrate; applying a second bias power at a power level that is greater than that of the first bias power to the substrate so as to form an HDP oxide film to fill the gap in the trench; and unloading the substrate from the apparatus.
1. A method of fabricating a trench isolation structure of a semiconductor device, comprising:
providing a substrate with a trench formed therein;
forming an oxide film on side wall and bottom surfaces of the trench;
forming a nitride liner on the oxide film on the side wall and bottom surfaces of the trench, and on top surfaces of the substrate;
loading the substrate into a high-density plasma (HDP) chemical vapor deposition apparatus;
primarily heating the substrate;
applying a first bias power to the apparatus so as to form an HDP oxide liner on an entire surface of the nitride liner, a gap remaining in the trench following formation of the HDP oxide liner;
removing the application of the first bias power and secondarily heating the substrate;
applying a second bias power at a power level that is greater than that of the first bias power to the substrate so as to form an HDP oxide film to fill the gap in the trench; and
unloading the substrate from the apparatus.
2. The method of claim 1 , wherein, in the primarily heating, the substrate is heated to a temperature in a range of about 300 to 400° C.
3. The method of claim 1 , wherein, in the forming of the HDP oxide liner, the substrate is heated to a temperature in a range of about 300 to 450° C.
4. The method of claim 1 , wherein the first bias power is in a range of about 500 to 2000 W.
5. The method of claim 1 , wherein the forming of the HDP oxide liner is performed within a time period which corresponds to a range of about 1/200 to 1/10 amount of a time period for forming of the HDP oxide film.
6. The method of claim 1 , wherein the forming of the HDP oxide liner is performed for a time period ranging from about one to five seconds.
7. The method of claim 1 , wherein, in the forming of the HDP oxide liner, a He gas is used as a sputtering gas.
8. The method of claim 1 , wherein, in the secondarily heating, the substrate is heated to temperature in a range of about 400 to 600° C.
9. The method of claim 1 , wherein the secondarily heating is performed for a time period ranging from about 50 to 150 seconds.
10. The method of claim 1 , wherein, in the forming of the HDP oxide film, the substrate is at a temperature ranging from about 600 to 800° C.
11. The method of claim 1 , wherein the second bias power is in a range of about 3000 to 6000 W.
12. The method of claim 1 , wherein the forming of the HDP oxide film is performed for time period ranging from about 50 to 200 seconds.
13. The method of claim 1 , wherein, in the forming of the HDP oxide film, a H 2 gas is used as a sputtering gas.
14. The method of claim 1 , wherein an oxide film and a nitride liner are sequentially formed on the side wall and bottom surfaces of the trench.
15. The method of claim 1 , wherein the substrate comprises:
a semiconductor base substrate;
a pad oxide layer on the semiconductor base substrate; and
a nitride layer on the pad oxide layer.
16. A method of fabricating a trench isolation structure of a semiconductor device, comprising:
providing a substrate with a trench formed therein;
forming an oxide film on side wall and bottom surfaces of the trench;
forming a nitride liner on the oxide film on side wall and bottom surfaces of the trench, and on top surfaces of the substrate;
loading the substrate into a high-density plasma (HDP) chemical vapor deposition apparatus;
primarily heating the substrate;
forming a He HDP oxide liner on an entire surface of the nitride liner, a gap remaining in the trench following forming the He HDP oxide liner;
secondarily heating the substrate;
forming a H 2 HDP oxide film to fill the gap in the trench; and
unloading the substrate from the apparatus.
17. The method of claim 16 , wherein, in the forming of the He HDP oxide liner, a first bias power is applied and, in the forming of the H 2 HDP oxide film, a second bias power is applied at a power level that is greater than that of the first bias power.
18. The method of claim 17 , wherein the first bias power is in a range of about 500 to 2000 W.
19. The method of claim 17 , wherein the second bias power is in a range of about 3000 to 6000 W.
20. The method of claim 16 , wherein, in the primarily heating, the substrate is heated to a temperature in a range of about 300 to 400° C.
21. The method of claim 16 , wherein, in the forming of the He HDP oxide liner, the substrate is at a temperature in a range of about 300 to 450° C.
22. The method of claim 16 , wherein a time required for forming the He HDP oxide liner is in a range of about 1/200 to 1/10 an amount of time required for forming the H 2 HDP oxide film.
23. The method of claim 16 , wherein the forming of the He HDP oxide liner is performed for a time period ranging from about one to five seconds.
24. The method of claim 16 , wherein, in the secondarily heating, the substrate is heated to a temperature ranging from about 400 to 600° C.
25. The method of claim 16 , wherein the secondarily heating is performed for a time period ranging from about 50 to 150 seconds.
26. The method of claim 16 , wherein, in the forming of the H 2 HDP oxide film, the temperature of the substrate is in a range of about 600 to 800° C.
27. The method of claim 16 , wherein the forming of the H 2 HDP oxide film is performed for a time period ranging from about 50 to 200 seconds.
28. The method of claim 16 , wherein an oxide film and a nitride liner are sequentially formed on the side wall and bottom surfaces of the trench.
29. The method of claim 16 , wherein the substrate comprises:
a semiconductor base substrate;
a pad oxide layer on the semiconductor base substrate; and
a nitride layer on the pad oxide layer.