Material for purification of semiconductor polishing slurry, module for purification of semiconductor polishing slurry and process for producing semiconductor polishing slurry
A material for purification of a semiconductor polishing slurry that without changing of pH value, is capable of efficiently purifying a polishing slurry to thereby not only prevent metal contamination of a polished object as effectively as possible but also achieve recycling of a polishing slurry without any problem; a relevant module for purification of a semiconductor polishing slurry; and a process for purifying a semiconductor polishing slurry with the use thereof. In particular, a material for purification of a semiconductor polishing slurry characterized in that it comprises a fibrous substrate having a functional group capable of forming a metal chelate or such a functional group together with hydroxyl fixed onto at least the surface thereof. This material for purification of a semiconductor polishing slurry is, for example, used in such a manner that it is inserted in a container fitted with polishing slurry inflow port and outflow port while ensuring passage of polishing slurry flow.
1. A material for purification of an acidic semiconductor polishing slurry used in a semiconductor polishing process, comprising:
a fibrous substrate;
an ethylenical hydroxyl group introduced onto the fibrous substrate for adsorbing at least one of a colloidal metal and a metal compound contained in the acidic semiconductor polishing slurry, the ethylenical hydroxyl group having a hydroxyl value of 40 mg KOH/g or more; and
an acid-type (H type) functional group introduced onto the fibrous substrate for ion-exchanging a metal ion contained in the acidic semiconductor polishing slurry or for forming a metal chelate with the metal ion.
2. The material of claim 1 ,
wherein the acid-type functional group for forming a metal chelate is at least one group selected from a group containing aminocarboxylic acids, a group containing phosphoric acids, and a group containing thio compounds, and
wherein the fibrous substrate includes at least one selected from a plant-based natural fiber, an animal-based natural fiber, a cellulose-based regenerated fiber, a polyvinyl alcohol-based synthetic polymer fiber, polyethylene imine-based synthetic polymer fiber, polyester-based synthetic polymer fiber, polyvinyl chloride-based synthetic polymer fiber, polyacrylonitrile-based synthetic polymer fiber, polyamide-based synthetic polymer fiber and polyolefin-based synthetic polymer fiber.
3. A material for purification of a basic semiconductor polishing slurry used in a semiconductor polishing process, comprising:
a fibrous substrate;
an ethylenical hydroxyl group introduced onto the fibrous substrate for adsorbing at least one of a colloidal metal and a metal compound contained in the basic semiconductor polishing slurry, the ethylenical hydroxyl group having a hydroxyl value of 40 mg KOH/g or more; and
an alkali-metal-type functional group introduced onto the fibrous substrate for ion-exchanging a metal ion contained in the basic semiconductor polishing slurry or for forming a metal chelate with the metal ion, the alkali-metal-type functional group having alkali metal or ammonium at an ion exchange site thereof.
4. The material of claim 3 ,
wherein the alkali-metal-type functional group for forming a metal chelate is at least one group selected from a group containing aminocarboxylic acids, a group containing phosphoric acids, and a group containing thio compounds, and
wherein the fibrous substrate includes at least one selected from a plant-based natural fiber, an animal-based natural fiber, a cellulose-based regenerated fiber, a polyvinyl alcohol-based synthetic polymer fiber, polyethylene imine-based synthetic polymer fiber, polyester-based synthetic polymer fiber, polyvinyl chloride-based synthetic polymer fiber, polyacrylonitrile-based synthetic polymer fiber, polyamide-based synthetic polymer fiber and polyolefin-based synthetic polymer fiber.
5. A process for purification of an acidic semiconductor polishing slurry used in a semiconductor polishing process, comprising:
preparing a removing module having the material according to claim 1 ;
passing the acidic semiconductor polishing slurry through the removing module to remove metals present in the acidic semiconductor polishing slurry; and
polishing a semiconductor by use of the acidic semiconductor polishing slurry passed through the removing module.
6. The process of claim 5 , further comprising:
passing the acidic semiconductor polishing slurry through the removing module to remove metals present in the acidic semiconductor polishing slurry after polishing the semiconductor.
7. The process of claim 5 ,
wherein the acid-type functional group for forming a metal chelate is at least one group selected from a group containing aminocarboxylic acids, a group containing phosphoric acids, and a group containing thio compounds, and
wherein the fibrous substrate is at least one selected from a plant-based natural fiber, an animal-based natural fiber, a cellulose-based regenerated fiber, a polyvinyl alcohol-based synthetic polymer fiber, polyethylene imine-based synthetic polymer fiber, polyester-based synthetic polymer fiber, polyvinyl chloride-based synthetic polymer fiber, polyacrylonitrile-based synthetic polymer fiber, polyamide-based synthetic polymer fiber and polyolefin-based synthetic polymer fiber.
8. A process for purification of an acidic semiconductor polishing slurry used in a semiconductor polishing process, comprising:
preparing a removing module having a plurality of the material according to claim 1 forming a layer structure;
passing the acidic semiconductor polishing slurry through the removing module to remove metals present in the acidic semiconductor polishing slurry; and
polishing a semiconductor by use of the acidic semiconductor polishing slurry passed through the removing module.
9. The process of claim 5 ,
wherein the material is formed into a self-supportable sheet.
10. The process of claim 5 ,
wherein the material is charged in a container provided with an inflow port and an outflow port for the polishing slurry so as to allow the polishing slurry to flow through.
11. The process of claim 5 ,
wherein the material is disposed in a flowable state within an area partitioned by a filter or a strainer through which the polishing slurry flows in a container provided with an inflow port and an outflow port for the semiconductor polishing slurry.
12. A process for purification of a basic semiconductor polishing slurry used in a semiconductor polishing process, comprising:
preparing a removing module having the material according to claim 3 ;
passing the basic semiconductor polishing slurry through the removing module to remove metals present in the basic semiconductor polishing slurry; and
polishing a semiconductor by use of the basic semiconductor polishing slurry passed through the removing module.
13. The process of claim 12 , further comprising;
passing the basic semiconductor polishing slurry through the removing module to remove metals present in the basic semiconductor polishing slurry after polishing the semiconductor.
14. The process of claim 12 ,
wherein the alkali-metal-type functional group for forming a metal chelate is at least one group selected from a group containing aminocarboxylic acids, a group containing phosphoric acids, and a group containing thio compounds, and
wherein the fibrous substrate includes at least one selected from a plant-based natural fiber, an animal-based natural fiber, a cellulose-based regenerated fiber, a polyvinyl alcohol-based synthetic polymer fiber, polyethylene imine-based synthetic polymer fiber, polyester-based synthetic polymer fiber, polyvinyl chloride-based synthetic polymer fiber, polyacrylonitrile-based synthetic polymer fiber, polyamide-based synthetic polymer fiber and polyolefin-based synthetic polymer fiber.
15. A process for purification of a basic semiconductor polishing slurry used in a semiconductor polishing process, comprising:
preparing a removing module having a plurality of the material according to claim 3 forming a layer structure;
passing the basic semiconductor polishing slurry through the removing module to remove metals present in the basic semiconductor polishing slurry; and
polishing a semiconductor by use of the basic semiconductor polishing slurry passed through the removing module.
16. The process of claim 12 ,
wherein the material is formed into a self-supportable sheet.
17. The process of claim 12 ,
wherein the material is charged in a container provided with an inflow port and an outflow port for the polishing slurry so as to allow the polishing slurry to flow through.
18. The process of claim 12 ,
wherein the material is disposed in a flowable state within an area partitioned by a filter or a strainer through which the polishing slurry flows in a container provided with an inflow port and an outflow port for the semiconductor polishing slurry.
19. A material for purification of an acidic semiconductor polishing slurry used in a semiconductor polishing process, comprising:
a fibrous substrate;
an ethylenical hydroxyl group introduced onto the fibrous substrate for adsorbing at least one of a colloidal metal and a metal compound contained in the acidic semiconductor polishing slurry, the ethylenical hydroxyl group having a hydroxyl value of 40 mg KOH/g or more;
an acid-type (H type) ion-exchange functional group introduced onto the fibrous substrate for ion-exchanging a metal ion contained in the acidic semiconductor polishing slurry; and
an acid-type (H type) chelate-forming functional group introduced onto the fibrous substrate for forming a metal chelate with the metal ion.
20. A material for purification of a basic semiconductor polishing slurry used in a semiconductor polishing process, comprising:
a fibrous substrate;
an ethylenical hydroxyl group introduced onto the fibrous substrate for adsorbing at least one of a colloidal metal and a metal compound contained in the basic semiconductor polishing slurry, the ethylenical hydroxyl group having a hydroxyl value of 40 mg KOH/g or more;
an alkali-metal-type ion-exchange functional group introduced onto the fibrous substrate for ion-exchanging a metal ion contained in the basic semiconductor polishing slurry, the alkali-metal-type ion-exchange functional group having alkali metal or ammonium at an ion exchange site thereof; and
an alkali-metal-type chelate-forming functional group introduced onto the fibrous substrate for forming a metal chelate with the metal ion, the alkali-metal-type chelate-forming functional group having alkali metal or ammonium at an ion exchange site thereof.