Solutions for integrated circuit integration of alternative active area materials
Methods of forming areas of alternative material on crystalline semiconductor substrates, and structures formed thereby. Such areas of alternative material are suitable for use as active areas in MOSFETs or other electronic or opto-electronic devices.
1. A structure comprising:
a first shallow trench isolation region having a first width and defining a first opening in a substrate, the first opening having at least a first pair of sidewalls defined by the first shallow trench isolation region;
a first active area comprising a first active area material disposed within and filling the first opening, the first active area being surrounded by and in contact with the first shallow trench isolation region;
a second shallow trench isolation region having a second width and defining a second opening in the substrate, the second opening having at least a second pair of sidewalls defined by the second shallow trench isolation region; and
a second active area comprising a second active area material disposed within and filling the second opening, the second active area being surrounded by and in contact with the second shallow trench isolation region,
wherein a ratio of the first width to the second width is greater than 1 and the first active area material is a semiconductor selected from the group consisting of Ge, SiGe, SiC, diamond, III-V semiconductors, and II-VI semiconductors.
2. The structure of claim 1 , wherein the second active area material comprises Si.
3. The structure of claim 1 , wherein the first active area material has a first crystalline orientation and the second active area material has a second crystalline orientation different from the first crystalline orientation.
4. The structure of claim 1 , wherein the ratio of the first width to the second width is selected from a range of 1.2 to 3.
5. The structure of claim 1 , wherein the first active area material is different from the second active area material.
6. The structure of claim 1 , wherein the substrate comprises a substrate material different from the first active area material.
7. The structure of claim 6 , wherein the substrate material is different from the second active area material.
8. The structure of claim 1 , wherein the second area material is a semiconductor selected from the group consisting of Ge, SiGe, SiC, diamond, III-V semiconductors, and II-VI semiconductors.
9. The structure of claim 1 , wherein the substrate comprises silicon.
10. The structure of claim 1 , wherein the substrate comprises germanium.
11. The structure of claim 1 , wherein the substrate comprises an insulator layer.
12. The structure of claim 8 , wherein the substrate comprises silicon.
13. The structure of claim 8 , wherein the substrate comprises germanium.
14. The structure of claim 8 , wherein the substrate comprises an insulator layer.