Manufacturing method of semiconductor substrate and manufacturing method of semiconductor device
View Patent ↗In a process of forming a single-crystalline semiconductor layer bonded to a glass substrate by low-temperature heat treatment, before a bonding and separation step in which the single-crystalline semiconductor layer is bonded to the glass substrate, the glass substrate is heated at a temperature higher than a heat temperature in the bonding and separation step. In a bonding step between the single-crystalline semiconductor layer and the glass substrate, the single-crystalline semiconductor layer is heated at a temperature close to a strain point of the glass substrate, specifically at a temperature in a range from minus 50° C. to plus 50° C. of a strain point. Accordingly, the glass substrate is subjected to heat treatment in advance at a temperature higher than the temperature close to the strain point, specifically, at a temperature higher than the temperature in a range from minus 50° C. to plus 50° C. of the strain point.
1. A manufacturing method of a semiconductor device, comprising:
conducting a first heat treatment to a glass substrate;
forming a separation layer at a predetermined depth from a surface of a single-crystalline semiconductor substrate;
forming a silicon oxide film over the single-crystalline semiconductor substrate by chemical vapor deposition;
superposing the single-crystalline semiconductor substrate and the glass substrate to which the first heat treatment is conducted on each other with the silicon oxide film interposed therebetween and bonding the single-crystalline semiconductor substrate to the glass substrate;
conducting a second heat treatment at a temperature close to a strain point of the glass substrate with the single-crystalline semiconductor substrate and the glass substrate superposed on each other, to generate a crack at the separation layer; and
separating the single-crystalline semiconductor substrate from the glass substrate so that a single-crystalline semiconductor layer remains on the glass substrate,
wherein the first heat treatment is conducted at a temperature higher than that of the second heat treatment.
2. The manufacturing method of a semiconductor device according to claim 1 , wherein after formation of the single-crystalline semiconductor layer over the glass substrate, a third heat treatment is conducted to the glass substrate and the single-crystalline semiconductor layer at a temperature lower than that of the first heat treatment.
3. The manufacturing method of a semiconductor device according to claim 1 , wherein the silicon oxide film is formed over the single-crystalline semiconductor substrate by chemical vapor deposition using an organic silane gas.
4. The manufacturing method of a semiconductor device according to claim 3 , wherein the organic silane gas is one selected from the group consisting of ethyl silicate, trimethylsilane, tetramethylsilane, tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, hexamethyldisilazane, triethoxysilane, and trisdimethylaminosilane.
5. The manufacturing method of a semiconductor device according to claim 1 ,
wherein a temperature in formation of the silicon oxide film over the single-crystalline semiconductor substrate by chemical vapor deposition is such that an element introduced to form the separation layer is not separated, and
wherein the second heat treatment is conducted at a temperature by which the element introduced to form the separation layer is separated.
6. The manufacturing method of a semiconductor device according to claim 1 ,
wherein a temperature in formation of the silicon oxide film over the single-crystalline semiconductor substrate by chemical vapor deposition is equal to or less than 350° C., and
wherein the second heat treatment is conducted at equal to or greater than 400° C.
7. A manufacturing method of a semiconductor device, comprising:
conducting a first heat treatment to a glass substrate;
forming a separation layer at a predetermined depth from a surface of a single-crystalline semiconductor substrate;
forming a silicon oxide film over the single-crystalline semiconductor substrate by chemical vapor deposition;
superposing the single-crystalline semiconductor substrate and the glass substrate to which the first heat treatment is conducted on each other with the silicon oxide film interposed therebetween and bonding the single-crystalline semiconductor substrate to the glass substrate;
conducting a second heat treatment at a temperature in a range from minus 50° C. to plus 50° C. of a strain point of the glass substrate with the single-crystalline semiconductor substrate and the glass substrate superposed on each other, to generate a crack at the separation layer; and
separating the single-crystalline semiconductor substrate from the glass substrate so that a single-crystalline semiconductor layer remains on the glass substrate,
wherein the first heat treatment is conducted at a temperature higher than that of the second heat treatment.
8. The manufacturing method of a semiconductor device according to claim 7 , wherein after formation of the single-crystalline semiconductor layer over the glass substrate, a third heat treatment is conducted to the glass substrate and the single-crystalline semiconductor layer at a temperature lower than that of the first heat treatment.
9. The manufacturing method of a semiconductor device according to claim 7 , wherein the silicon oxide film is formed over the single-crystalline semiconductor substrate by chemical vapor deposition using an organic silane gas.
10. The manufacturing method of a semiconductor device according to claim 9 , wherein the organic silane gas is one selected from the group consisting of ethyl silicate, trimethylsilane, tetramethylsilane, tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, hexamethyldisilazane, triethoxysilane, and trisdimethylaminosilane.
11. The manufacturing method of a semiconductor device according to claim 7 ,
wherein a temperature in formation of the silicon oxide film over the single-crystalline semiconductor substrate by chemical vapor deposition is such that an element introduced to form the separation layer is not separated, and
wherein the second heat treatment is conducted at a temperature by which the element introduced to form the separation layer is separated.
12. The manufacturing method of a semiconductor device according to claim 7 ,
wherein a temperature in formation of the silicon oxide film over the single-crystalline semiconductor substrate by chemical vapor deposition is equal to or less than 350° C., and
wherein the second heat treatment is conducted at equal to or greater than 400° C.
13. A manufacturing method of a semiconductor device, comprising:
conducting a first heat treatment to a glass substrate;
forming a separation layer at a predetermined depth from a surface of a single-crystalline semiconductor substrate;
forming a silicon oxide film over the single-crystalline semiconductor substrate by chemical vapor deposition;
superposing the single-crystalline semiconductor substrate and the glass substrate to which the first heat treatment is conducted on each other with the silicon oxide film interposed therebetween and bonding the single-crystalline semiconductor substrate to the glass substrate;
conducting a second heat treatment at a temperature equal to or greater than 580° C. and equal to or less than 680° C. with the single-crystalline semiconductor substrate and the glass substrate superposed on each other, to generate a crack at the separation layer; and
separating the single-crystalline semiconductor substrate from the glass substrate so that a single-crystalline semiconductor layer remains on the glass substrate,
wherein the first heat treatment is conducted at a temperature higher than that of the second heat treatment.
14. The manufacturing method of a semiconductor device according to claim 13 , wherein after formation of the single-crystalline semiconductor layer over the glass substrate, a third heat treatment is conducted to the glass substrate and the single-crystalline semiconductor layer at a temperature lower than that of the first heat treatment.
15. The manufacturing method of a semiconductor device according to claim 13 , wherein the silicon oxide film is formed over the single-crystalline semiconductor substrate by chemical vapor deposition using an organic silane gas.
16. The manufacturing method of a semiconductor device according to claim 15 , wherein the organic silane gas is one selected from the group consisting of ethyl silicate, trimethylsilane, tetramethylsilane, tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, hexamethyldisilazane, triethoxysilane, and trisdimethylaminosilane.
17. The manufacturing method of a semiconductor device according to claim 13 ,
wherein a temperature in formation of the silicon oxide film over the single-crystalline semiconductor substrate by chemical vapor deposition is such that an element introduced to form the separation layer is not separated, and
wherein the second heat treatment is conducted at a temperature by which the element introduced to form the separation layer is separated.
18. The manufacturing method of a semiconductor device according to claim 13 ,
wherein a temperature in formation of the silicon oxide film over the single-crystalline semiconductor substrate by chemical vapor deposition is equal to or less than 350° C., and
wherein the second heat treatment is conducted at equal to or greater than 400° C.