Method, device and system for bonding a semiconductor element
The invention relates to a method and also a device and a system for bonding a semiconductor element ( 4 ), in which various contact areas ( 8 ) of the semiconductor element ( 4 ) are successively connected to terminal areas ( 2, 3, 7 ) by means of bonding wire elements ( 6 ) and in which an electrical variable influenced by the semiconductor element ( 4 ) is acquired during the bonding operation.
1. A method for bonding a semiconductor element positioned on a substrate, the substrate being positioned on a base which is electrically insulated from a bonding tool, the method comprising:
coupling a first terminal of a power source to a terminal of the bonding tool and a second terminal of the power source to a terminal of the base so that the substrate is capacitively coupled to the base and the base is capacitively coupled to the bonding tool to form an overall capacitance between the semiconductor element and the bonding tool;
actuating the bonding tool to connect a contact area of the semiconductor element to a terminal area of the substrate by means of a bonding wire element; and
measuring an electrical variable influenced by the semiconductor element to determine whether the overall capacitance changes while the contact area is being connected to the terminal area.
2. The method as claimed in claim 1 , wherein the electrical variable is an impedance, a voltage, a leakage current or an IV characteristic.
3. The method as claimed in claim 1 , wherein the electrical variable is acquired by applying a DC or AC voltage.
4. The method as claimed in claim 1 , wherein the electrical variable is continuously acquired and measured values are stored in a time-resolved form.
5. The method as claimed in claim 1 , wherein the power source applies an AC voltage between the terminal of the bonding tool and the terminal of the base.
6. The method as claimed in claim 5 , wherein the frequency of the AC voltage is greater than 100 Hz.
7. The method as claimed in claim 1 , further comprising acquiring at least measured values of one of reflected ultrasound output and deformation of a bonding wire.
8. The method as claimed in claim 7 , wherein each acquired measured value is stored in a time-resolved form.
9. The method as claimed in claim 8 , wherein the time resolution is dimensioned in time intervals of equal length of a triggering signal of the bonding device.
10. The method as claimed in claim 7 , wherein each acquired measured value is stored in a location-resolved form.
11. The method as claimed in claim 7 , wherein the acquired measured values are stored in a memory device together with an identification parameter of the individual semiconductor element.