Semiconductor components having encapsulated through wire interconnects (TWI)
A semiconductor component includes a semiconductor substrate having a substrate contact, and a through wire interconnect (TWI) attached to the substrate contact. The through wire interconnect provides a multi level interconnect having contacts on opposing first and second sides of the semiconductor substrate. The through wire interconnect (TWI) includes a via through the substrate contact and the substrate, a wire in the via having a bonded connection with the substrate contact, a first contact on the wire proximate to the first side, and a second contact on the wire proximate to the second side. The through wire interconnect (TWI) also includes a polymer layer which partially encapsulates the through wire interconnect (TWI) while leaving the first contact exposed. The semiconductor component can be used to fabricate stacked systems, module systems and test systems. A method for fabricating the semiconductor component can include a film assisted molding process for forming the polymer layer.
1. A semiconductor component comprising:
a semiconductor substrate having a first side, a second side, and a via having an inside diameter extending through the substrate from the first side to the second side;
a wire in the via having an outside diameter less than the inside diameter of the via with a space therebetween and a wire bonded connection on the first side;
a first contact on the wire proximate to the first side;
a second contact on the wire proximate to the second side; and
a polymer layer on the first side at least partially encapsulating the wire while leaving the first contact exposed.
2. The semiconductor component of claim 1 wherein the substrate includes a substrate contact, the via extends through the substrate contact, and the wire bonded connection is on the substrate contact.
3. The semiconductor component of claim 1 further comprising a bonding member on the first side attached to the wire configured to secure the wire to the first side, and wherein the first contact comprises a tip portion of the bonding member unencapsulated by the polymer layer.
4. The semiconductor component of claim 1 wherein the first contact comprises a loop portion of the wire unencapsulated by the polymer layer having a selected height on the first side.
5. The semiconductor component of claim 1 wherein the second contact comprises an end of the wire.
6. The semiconductor component of claim 1 wherein the second contact comprises a bump, a pad, a ball, a projection or a surface on the wire.
7. The semiconductor component of claim 1 wherein the substrate comprises at least one integrated circuit in electrical communication with the wire.
8. The semiconductor component of claim 1 further comprising at least one second substrate on the substrate having a second through wire interconnect in electrical communication with the through wire interconnect.
9. The semiconductor component of claim 1 further comprising a conductive polymer layer on the substrate electrically connecting the through wire interconnect to a second substrate.
10. The semiconductor component of claim 1 further comprising an insulating layer in the via or on the wire.
11. The semiconductor component of claim 1 further comprising a polymer material in the via surrounding the wire.
12. The semiconductor component of claim 1 wherein the polymer layer extends into the via and surrounds the wire.
13. The semiconductor component of claim 1 further comprising a second polymer layer at least partially encapsulating the second side while leaving the second contact exposed.
14. The semiconductor component of claim 1 further comprising a pad on the first side in electrical communication with the wire.
15. The semiconductor component of claim 1 wherein the first contact comprises a projection on a loop portion of the wire.
16. The semiconductor component of claim 1 wherein the polymer layer substantially encapsulates the first side and peripheral edges of the substrate.
17. The semiconductor component of claim 1 wherein the polymer layer substantially encapsulates the first side and the second side of the substrate.
18. The semiconductor component of claim 1 wherein the polymer layer substantially encapsulates the first side and the wire in the via.
19. The semiconductor component of claim 1 wherein the wire includes a metal surface configured as the first contact or the second contact.
20. A semiconductor component comprising:
a semiconductor substrate having a first side, a second side, and a via having an inside diameter extending through the substrate from the first side to the second side;
a wire in the via having an outside diameter less than the inside diameter of the via with a space therebetween and a wire bonded connection on the first side;
a first contact on the wire proximate to the first side;
a second contact on the wire proximate to the second side; and
a polymer layer on the first side at least partially encapsulating the wire while leaving the first contact exposed;
wherein the first contact comprises a loop portion of the wire supported by a support member between the loop portion and the first side configured to space the first contact from the first side by a selected height.
21. A semiconductor component comprising:
a semiconductor substrate having a first side, a substrate contact on the first side, and a second side;
a via in the substrate having an inside diameter extending from the first side to the second side;
a wire in the via having an outside diameter less than the inside diameter of the via with a space therebetween and a wire bonded connection to the substrate contact;
a bonding member attached to the wire configured to secure the wire to the substrate contact having a portion configured as a first contact having a selected height on the first side; and
a polymer layer on the first side having a planar surface at least partially encapsulating the wire and the bonding member while leaving the first contact exposed.
22. The semiconductor component of claim 21 further comprising a second contact on an end of the wire proximate to the second side.
23. The semiconductor component of claim 21 wherein the via extends through the substrate contact and the inside diameter of the via is from 1.5 to 3 times larger than the outside diameter of the wire.
24. The semiconductor component of claim 22 further comprising a third contact on the wire comprising a loop portion of the wire proximate to the first side.
25. The semiconductor component of claim 22 wherein the bonding member comprises a stud bump, a double bump, a ball bump, a solder bump or a conductive polymer bump.
26. The semiconductor component of claim 22 wherein the semiconductor substrate comprises a thinned semiconductor die.
27. The semiconductor component of claim 22 wherein the semiconductor substrate comprises a semiconductor wafer.
28. The semiconductor component of claim 22 further comprising an insulating layer in the via or on the wire configured to insulate the wire from the semiconductor substrate.
29. The semiconductor component of claim 22 further comprising a polymer material in the via at least partially encapsulating the wire.
30. The semiconductor component of claim 22 further comprising a second polymer layer on the second side.
31. The semiconductor component of claim 22 wherein the polymer layer extends into the via and secures the wire in the via.
32. The semiconductor component of claim 22 wherein the polymer layer encapsulates five sides of the substrate.
33. A semiconductor component comprising:
a semiconductor substrate having a first side, a substrate contact on the first side, and a second side;
a via in the substrate having an inside diameter extending from the first side to the second side;
a wire in the via having an outside diameter less than the inside diameter of the via with a space therebetween and a wire bonded connection to the substrate contact;
a bonding member attached to the wire configured to secure the wire to the substrate contact having a portion configured as a first contact having a selected height on the first side;
a polymer layer on the first side having a planar surface at least partially encapsulating the wire and the bonding member while leaving the first contact exposed; and
a support member on the substrate contact configured to support and space a loop portion of the wire from the first side by a selected second height.
34. A semiconductor component comprising:
a semiconductor substrate having a first side, a substrate contact on the first side, and a second side;
a via in the substrate having an inside diameter extending from the first side to the second side;
a wire in the via wire bonded to the substrate contact having an outside diameter less than the inside diameter of the via with a space therebetween and a loop portion proximate to the first side;
a support member on the first side supporting and spacing the loop portion from the first side with a selected height; and
a first contact on the wire.
35. The semiconductor component of claim 34 wherein the first contact comprises an exposed surface of the loop portion.
36. The semiconductor component of claim 34 wherein the first contact comprises a projection or a bump on the loop portion.
37. The semiconductor component of claim 34 wherein the first contact includes a layer configured to enhance wear resistance or penetration of a mating contact on a second semiconductor component.
38. The semiconductor component of claim 34 further comprising a polymer layer on the first side substantially encapsulating the loop portion while leaving the first contact exposed.
39. The semiconductor component of claim 34 further comprising a second contact on an end of the wire proximate to the second side.
40. The semiconductor component of claim 34 further comprising a bonding member on the substrate contact having a tip portion configured as another contact.
41. The semiconductor component of claim 34 wherein the wire is free to move in the via.
42. The semiconductor component of claim 34 wherein the wire is secured to the via by a polymer material in the via.
43. The semiconductor component of claim 34 wherein the wire is secured to the via by a polymer layer on the first side and in the via.
44. A semiconductor component comprising:
a semiconductor substrate having a first side, a substrate contact on the first side, and a second side;
a via in the substrate contact and the substrate having an inside diameter extending from the first side to the second side;
a wire in the via having an outside diameter and a wire bonded connection to the substrate contact, the inside diameter of the via being from 1.5 to 3 times larger than the outside diameter of the wire;
a bonding member attached to the wire configured to secure the wire to the substrate contact having a portion configured as a first contact; and
a polymer layer on the first side at least partially encapsulating the wire and the bonding member while leaving the first contact exposed.
45. A semiconductor component comprising:
a semiconductor substrate having a first side, a substrate contact on the first side, and a second side;
a via in the substrate contact and the substrate having an inside diameter extending from the first side to the second side;
a wire in the via having an outside diameter and a wire bonded connection to the substrate contact, the inside diameter of the via being from 1.5 to 3 times larger than the outside diameter of the wire;
a bonding member attached to the wire configured to secure the wire to the substrate contact having a portion configured as a first contact;
a polymer layer on the first side at least partially encapsulating the wire and the bonding member while leaving the first contact exposed; and
a support member on the first side configured to support the loop portion.
46. The semiconductor component of claim 44 further comprising a second contact on an end of the wire proximate to the second side.
47. The semiconductor component of claim 44 further comprising a third contact comprising a loop portion of the wire proximate to the first side.